Abstract: An electronic device and a voice recognition method thereof are provided. A voice recognition method of an electronic device includes receiving trigger voice, storing a characteristic of the trigger voice for voice verification by analyzing the trigger voice. When a user issues a voice command, determining whether the user voice command comprises the characteristic belonging to the trigger voice, and performing function of the electronic device corresponding to the user voice command based on the determination. Accordingly, users may easily use the voice recognition function of the electronic device.

Abstract: Provided is a method for manufacturing a polarizing plate, comprising a step of irradiating an optical laminate with ultraviolet rays having an emission wavelength band of 380 nm to 410 nm. The optical laminate sequentially comprises a first base film, a first adhesive layer, a linear polarizer, a second adhesive layer, a second base film and a reverse dispersion liquid crystal layer. The first adhesive layer and the second adhesive layer each comprise a photosensitizer for initiating a curing reaction in a wavelength band of 350 nm to 410 nm, and the ultraviolet rays are irradiated on the first base film side of the optical laminate.

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

Abstract: A test apparatus for a semiconductor package comprising an X-ray analyzer acquiring an X-ray image of the semiconductor package and detecting a thickness of the semiconductor package from the X-ray image, and a thermal reaction analyzer applying a voltage to the semiconductor package and detecting a failure position of the semiconductor package using a surface temperature of the semiconductor package and the thickness of the semiconductor package may be provided.

Abstract: A test apparatus for a semiconductor package comprising an X-ray analyzer acquiring an X-ray image of the semiconductor package and detecting a thickness of the semiconductor package from the X-ray image, and a thermal reaction analyzer applying a voltage to the semiconductor package and detecting a failure position of the semiconductor package using a surface temperature of the semiconductor package and the thickness of the semiconductor package may be provided.