Patents by Inventor Chan-Wook Baik

Chan-Wook Baik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7755273
    Abstract: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.
    Type: Grant
    Filed: May 15, 2007
    Date of Patent: July 13, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Deuk-seok Chung, Yong-chul Kim, Yong-wan Jin, Sun-il Kim, Ho-suk Kang, Chan-wook Baik
  • Patent number: 7727039
    Abstract: A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: June 1, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan-wook Baik, Sun-il Kim, Deuk-seok Chung, Byong-gwon Song, Min-jong Bae
  • Publication number: 20090289542
    Abstract: An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.
    Type: Application
    Filed: October 10, 2008
    Publication date: November 26, 2009
    Inventors: Chan Wook Baik, Anurag Srivastava, Jong Min Kim, Sun Il Kim, Young Mok Son, Gun Sik Park, Jin Kyu So
  • Patent number: 7609805
    Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: October 27, 2009
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Chan-wook Baik, Yong-wan Jin, Gun-sik Park, Jong-min Kim, Young-min Shin, Jin-kyu So
  • Publication number: 20090252938
    Abstract: Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.
    Type: Application
    Filed: August 8, 2008
    Publication date: October 8, 2009
    Inventors: Chan Wook Baik, Jong Seok Kim, Sun II Kim, Young Mok Son
  • Publication number: 20090233240
    Abstract: Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
    Type: Application
    Filed: November 10, 2008
    Publication date: September 17, 2009
    Inventors: Chan Wook Baik, Junhee Choi, Seog Woo Hong, Joo Ho Lee
  • Publication number: 20090120903
    Abstract: A method of multi-stage substrate etching is provided.
    Type: Application
    Filed: March 4, 2008
    Publication date: May 14, 2009
    Inventors: Chan Wook Baik, Seog Woo Hong, Jong Seok Kim, Seong Chan Jun, Sun Il Kim
  • Patent number: 7517710
    Abstract: A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: April 14, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun-Hee Choi, Ho-Suk Kang, Chan-Wook Baik, Ha-Jong Kim
  • Publication number: 20090029118
    Abstract: A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality.
    Type: Application
    Filed: February 4, 2008
    Publication date: January 29, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan Wook BAIK, Jong Seok KIM, Seong Chan JUN, Sun Il KIM, Jong Min KIM, Chan Bong JUN, Sang Hun LEE
  • Publication number: 20080297276
    Abstract: A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.
    Type: Application
    Filed: February 28, 2008
    Publication date: December 4, 2008
    Inventors: Seong Chan Jun, Sun Il Kim, Chan Wook Baik
  • Patent number: 7432646
    Abstract: A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: October 7, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun-Hee Choi, Deuk-Seok Chung, Byong-Gwon Song, Andrei Zoulkarneev, Chan-Wook Baik, Ha-Jong Kim, Moon-Jin Shin, Ho-Suk Kang
  • Publication number: 20080164798
    Abstract: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.
    Type: Application
    Filed: January 8, 2008
    Publication date: July 10, 2008
    Inventors: Chan-wook Baik, Yong-wan Jin, Sun-il Kim, Min-jong Bae
  • Publication number: 20080166640
    Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process.
    Type: Application
    Filed: August 30, 2007
    Publication date: July 10, 2008
    Inventors: Chan-wook Baik, Yong-wan Jin, Gun-sik Park, Jong-min Kim, Young-min Shin, Jin-kyu So
  • Publication number: 20080119104
    Abstract: A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.
    Type: Application
    Filed: June 1, 2007
    Publication date: May 22, 2008
    Inventors: Chan-wook Baik, Sun-il Kim, Deuk-seok Chung, Byong-gwon Song, Min-jong Bae
  • Publication number: 20080111464
    Abstract: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.
    Type: Application
    Filed: May 15, 2007
    Publication date: May 15, 2008
    Inventors: Deuk-seok Chung, Yong-chul Kim, Yong-wan Jin, Sun-il Kim, Ho-suk Kang, Chan-wook Baik
  • Publication number: 20080102547
    Abstract: A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.
    Type: Application
    Filed: October 18, 2007
    Publication date: May 1, 2008
    Inventors: Sun-il Kim, Jun-hee Choi, Byong-gwon Song, Shang-hyeun Park, Ho-suk Kang, Deuk-seok Chung, Chan-wook Baik
  • Publication number: 20080084156
    Abstract: An anode panel for a Field Emission Device (FED) includes a substrate, an anode electrode arranged on a lower surface of the substrate, a black matrix arranged on a lower surface of the anode electrode and having a plurality of openings with respect to one pixel, phosphor layers having predetermined colors to cover the plurality of openings corresponding to each pixel and the black matrix between the plurality of openings, and a reflection layer arranged on lower surfaces of the phosphor layers.
    Type: Application
    Filed: July 13, 2007
    Publication date: April 10, 2008
    Inventors: Jun-Hee Choi, Sun-Il Kim, Shang-Hyeun Park, Andrei Zoulkarneev, Deuk-Seok Chung, Byong-Gwon Song, Ho-Suk Kang, Chan-Wook Baik
  • Publication number: 20070229003
    Abstract: A field emission type backlight unit and a method of manufacturing the same. The field emission type backlight unit includes a lower substrate, a plurality of cathode electrodes formed on the lower substrate, a plurality of insulating layers formed in a line shape on the lower substrate and the cathode electrodes, a plurality of gate electrodes formed on the insulating layers, and at least one emitter formed of an electron emission material on each cathode electrode between the insulating layers.
    Type: Application
    Filed: August 28, 2006
    Publication date: October 4, 2007
    Inventors: Shang-Hyeun Park, Chan-Wook Baik, Jeong-Hee Lee, Yong-Wan Jin
  • Publication number: 20070176206
    Abstract: A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided.
    Type: Application
    Filed: November 28, 2006
    Publication date: August 2, 2007
    Inventors: Jun-Hee Choi, Ho-Suk Kang, Chan-Wook Baik, Ha-Jong Kim
  • Publication number: 20060261726
    Abstract: A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.
    Type: Application
    Filed: May 12, 2006
    Publication date: November 23, 2006
    Inventors: Jun-Hee Choi, Deuk-Seok Chung, Byong-Gwon Song, Andrei Zoulkarneev, Chan-Wook Baik, Ha-Jong Kim, Moon-Jin Shin, Ho-Suk Kang