Abstract: Disclosed herein are methods, systems, and apparatus for estimating a fetal DNA percentage in a biological sample. In some embodiments, methods may include receiving one or more sequence tags for each of a plurality of DNA fragments in the biological sample. In addition, methods may include determining genomic positions for the sequence tags. Also, methods may include for each of one or more genomic regions, determining, with a computer system, a respective amount of DNA fragments within the genomic region from sequence tags having genomic positions within the genomic region; normalizing the respective amount to obtain a respective density; and comparing the respective density to a reference density to identify whether the respective density is statistically different from the reference density. Further, methods may include estimating the fetal DNA percentage from the one or more genomic regions identified to have respective densities statistically different than the reference densities.

Abstract: A shoe care apparatus includes an inner cabinet, an inlet, an outlet, a connection passage, a heater, a blower, and a desiccant block. The air inside the inner cabinet flows into the connection passage through the inlet, and is discharged back into the inner cabinet through the outlet after being dehumidified by the desiccant block while circulating inside the shoe care apparatus. The heater is located in the inner space of the desiccant block to recycle the desiccant of the desiccant block.

Abstract: A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first drift region, and a metal field plate disposed over the first dielectric layer. The first drift region and the first doped region include a first conductivity type. The second drift region, the second doped region and third doped region include a second conductivity type complementary to the first conductivity type. The first dielectric layer overlaps a portion of the first drift region and a portion of the second drift region. The second doped region is separated from the first doped region.

Abstract: A method for manufacturing a package structure includes providing a carrier board; providing at least one die having a top surface, a bottom surface, and a side surface on the carrier board; and forming a protective layer to cover at least a portion of the side surface of the die. The die includes a substrate, a semiconductor layer, a gate structure, a source structure and a drain structure, at least one dielectric layer, and at least one pad. The semiconductor layer is disposed on the substrate. The gate structure is disposed on the semiconductor layer. The source and the drain structures are disposed on opposite sides of the gate structure. The dielectric layer covers the gate, source, and drain structures. The pad is disposed on the dielectric layer and penetrates through the dielectric layer to electrically contact with the gate, source or drain structure.

Abstract: Provided is an optical phase array antenna including a coupling unit for receiving light from a light source, a light distribution unit for distributing light propagated from the coupling unit to a plurality of optical paths, a phase modulation unit for modulating a phase of the light distributed from the light distribution unit, and a light output unit that outputs the light modulated by the phase modulation unit, and includes an antenna element waveguide extending at a predetermined length through which the light propagates, and a clad layer formed to surround the antenna element waveguide, in which the antenna element waveguide has a first recessed portion recessed downward with respect to an upper surface thereof, and the clad layer has a second recessed portion recessed downward with respect to an upper surface thereof at a position adjacent to the first recessed portion.

Abstract: Disclosed herein are methods, systems, and apparatus for detecting microamplifications or microdeletions in the genome of a fetus. In some embodiments, the method comprises receiving sequence tags for each of a plurality of DNA fragments in a biological sample; determining genomic positions for the sequence tags; determining whether the density of DNA in each of a plurality of genomic regions is aberrantly high or low; identifying as a microamplification a set of consecutive genomic regions having aberrantly high density; and identifying as a microdeletion a set of consecutive genomic regions having aberrantly low density. The biological sample may be a blood sample obtained noninvasively from a female subject pregnant with the fetus.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a deep trench isolation (DTI), an interconnect structure, and a conductive pillar. The DTI is disposed in the substrate and the interconnect structure is disposed over the substrate. The conductive pillar extends from the interconnect structure toward the substrate and penetrates the DTI. A method of manufacturing the semiconductor structure is also provided.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.

Abstract: A semiconductor structure includes first and second active regions extending in a first direction. The semiconductor structure further includes gate electrodes extending in a second direction perpendicular to the first direction. Each of the gate electrodes includes a first segment over at least one of the first active region or the second active region; a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

Abstract: The present disclosure describes a structure with a conductive plate and a method for forming the structure. The structure includes a gate structure disposed on a diffusion region of a substrate, a protective layer in contact with the diffusion region and covering a sidewall of the gate structure and a portion of a top surface of the gate structure, and a first insulating layer in contact with the gate structure and the protective layer. The structure further includes a conductive plate in contact with the first insulating layer, where a first portion of the conductive plate laterally extends over a horizontal portion of the protective layer, and where a second portion of the conductive plate extends over a sidewall portion of the protective layer covering the sidewall of the gate structure. The structure further includes a second insulating layer in contact with the conductive plate.

Abstract: The present invention relates to a speaker diarization technology, and more specifically to, end-to-end speaker diarization system and method through transformer learning having an auxiliary loss-based residual connection to separate speakers by dividing the speakers for time interval, wherein the end-to-end speaker diarization system and method using an auxiliary loss can differentiate and separate speakers through speaker labeling based on the transformer learning using an auxiliary loss even if speaker speeches overlap in a multi-speaker environment.

Abstract: A method of making a semiconductor structure includes forming a plurality of gate electrodes over a plurality of active regions. The method further includes increasing a width of a portion of each of the plurality of gate electrodes between adjacent active regions of the plurality of active regions, wherein increasing the width of the portion of each of the plurality of gate electrodes comprises increasing the width of less than an entirety of each of the plurality of gate electrodes between the adjacent active regions. The method further includes removing a central region of each of the plurality of gate electrodes, wherein the central region has the increased width, and removing the central region comprises removing less than an entirety of the portion of each of the plurality of gate electrodes.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.

Abstract: A novel Deinococcus radiodurans strain, an exopolysaccharide derived therefrom and a composition comprising the same are provided. In detail, a Deinococcus radiodurans BRD125 strain characterized in being deposited with accession number KCTC 13955BP, an exopolysaccharide derived therefrom and a composition comprising the same, and a method of extracting a Deinococcus radiodurans-derived exopolysaccharide are provided.

Abstract: A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut fl

Abstract: A method of making a semiconductor structure includes forming a plurality of gate electrodes over a plurality of active regions. The method further includes increasing a width of a portion of each of the plurality of gate electrodes between adjacent active regions of the plurality of active regions, wherein increasing the width of the portion of each of the plurality of gate electrodes comprises increasing the width of less than an entirety of each of the plurality of gate electrodes between the adjacent active regions. The method further includes removing a central region of each of the plurality of gate electrodes, wherein the central region has the increased width, and removing the central region comprises removing less than an entirety of the portion of each of the plurality of gate electrodes.

Abstract: Systems and methods are described herein for generating enhanced search results utilizing third-party website content within a search engine provided by an electronic catalog of a service provider. This content may be collected in advance of query processing and analyzed to identify a category indicating some attribute of the content (e.g., terms mentioned, topics discussed, object depicted in images/videos/3D data of the content, etc.). Items may be matched to the website through analyzing the textual and/or visual representation data of the website to textual and/or visual representation data associated with an item offered within the electronic catalog. A query may be subsequently received and a third-party website may be identified as being relevant to the search query. In response to the query, the third-party website may be included in a search result list along with images and/or text identifying items pertaining to that website.

Abstract: A nose cleaning system for personal care and hygiene for the nose includes a nose cleaner having a cleaning head that has a textured surface; a neck that is wider than the cleaning head; a gripping body that is of smaller circumference (or perimeter) than the neck, and ergonomically designed to sit well in the fingers; a handle base; and a cover that is connectable to the neck; and a foaming nose cleanser having a pH of about 6. The foaming nose cleanser includes water (90%); a mix of synthetic detergents (6%); humectants or moisture enhancers (1.5%), salt (1.5%); and additives (1%).

Abstract: The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.