Patents by Inventor Chandrika Durbha

Chandrika Durbha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10236873
    Abstract: In an example, an apparatus includes an analog switch having an n-type metal oxide semiconductor (NMOS) circuit in parallel with a p-type metal oxide semiconductor (PMOS) circuit between a switch input and a switch output. The analog switch is responsive to an enable signal that determines switch state thereof. The NMOS circuit includes a switch N-channel transistor coupled to a buffer N-channel transistor, a gate of the switch N-channel transistor coupled to the enable signal and a gate of the buffer N-channel transistor coupled to a modulated N-channel gate voltage. The PMOS circuit including a switch P-channel transistor coupled to a buffer P-channel transistor, a gate of the switch P-channel transistor coupled to a complement of the enable signal and a gate of the buffer P-channel transistor coupled to a modulated P-channel gate voltage.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: March 19, 2019
    Assignee: XILINX, INC.
    Inventors: Ionut C. Cical, John K. Jennings, Chandrika Durbha
  • Publication number: 20160277019
    Abstract: In an example, an apparatus includes an analog switch having an n-type metal oxide semiconductor (NMOS) circuit in parallel with a p-type metal oxide semiconductor (PMOS) circuit between a switch input and a switch output. The analog switch is responsive to an enable signal that determines switch state thereof. The NMOS circuit includes a switch N-channel transistor coupled to a buffer N-channel transistor, a gate of the switch N-channel transistor coupled to the enable signal and a gate of the buffer N-channel transistor coupled to a modulated N-channel gate voltage. The PMOS circuit including a switch P-channel transistor coupled to a buffer P-channel transistor, a gate of the switch P-channel transistor coupled to a complement of the enable signal and a gate of the buffer P-channel transistor coupled to a modulated P-channel gate voltage.
    Type: Application
    Filed: March 17, 2015
    Publication date: September 22, 2016
    Applicant: Xilinx, Inc.
    Inventors: Ionut C. Cical, John K. Jennings, Chandrika Durbha
  • Patent number: 8766692
    Abstract: A Schmitt trigger inverter circuit can include a first inverter. The first inverter can include a first pull-up device, a first pull-down device and a second pull-down device. The first inverter can receive an input signal. The Schmitt trigger inverter circuit can include a second inverter coupled in series with the first inverter and including an output that generates an output signal. The Schmitt trigger inverter circuit further can include a switch coupled to the output of the second inverter circuit and that is selectively enabled by the output signal. The switch can couple a predetermined reference voltage to a source terminal of the first pull-down device when in an enabled state. Coupling the predetermined reference voltage to the source terminal of the first pull-down device can alter a threshold voltage of the Schmitt trigger inverter circuit.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: July 1, 2014
    Assignee: Xilinx, Inc.
    Inventors: Chandrika Durbha, Edward Cullen, Ionut C. Cical
  • Patent number: 8519771
    Abstract: Methods and apparatus for receiving high voltage signals using a receiver designed in a low supply voltage technology are disclosed. One embodiment of an integrated circuit includes a single ended driver including an n-type metal-oxide-semiconductor (NMOS) transistor and a p-type metal-oxide-semiconductor (PMOS) transistor. An input pass gate is coupled to the single ended driver, and is configured as a PMOS pass gate coupled in parallel with the NMOS transistor in the single ended driver. In a low voltage mode, the NMOS transistor and the PMOS pass gate form a first pass gate for transmitting the input signal to the receiver. In a high voltage mode, the PMOS pass gate is disabled, and the NMOS transistor and PMOS transistor form a second pass gate for transmitting the input signal to the receiver.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: August 27, 2013
    Assignee: Xilinx, Inc.
    Inventors: Ionut Cical, Edward Cullen, Chandrika Durbha