Patents by Inventor Chang-An Chou
Chang-An Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240159986Abstract: An imaging lens assembly module includes an imaging lens element set, a lens carrier and a light blocking structure. The imaging lens element set has an optical axis. At least one lens element of the lens elements is disposed in the lens carrier. The light blocking structure includes a light blocking opening. The optical axis passes through the light blocking opening, and the light blocking opening includes at least two arc portions and a shrinking portion. Each of the arc portions has a first curvature radius for defining a maximum diameter of the light blocking opening. The shrinking portion is connected to the arc portions for forming the light blocking opening into a non-circular shape. The shrinking portion includes at least one protruding arc which extends and shrinks gradually from the shrinking portion to the optical axis, and the protruding arc has a second curvature radius.Type: ApplicationFiled: November 8, 2023Publication date: May 16, 2024Inventors: Lin-An CHANG, Ming-Ta CHOU, Shu-Yun YANG, Cheng-Feng LIN
-
Publication number: 20240154010Abstract: Embodiments of the present disclosure relates to a semiconductor device structure. The structure includes a source/drain epitaxial feature disposed over a substrate, a first interlayer dielectric (ILD) disposed over the source/drain epitaxial feature, a second ILD disposed over the first ILD. The second ILD includes a first dopant species having an atomic radius equal to or greater than silicon and a second dopant species having an atomic mass less than 15. The structure also includes a first conductive feature disposed in the second ILD, and a second conductive feature disposed over the source/drain epitaxial feature, the second conductive feature extending through the first ILD and in contact with the first conductive feature.Type: ApplicationFiled: January 22, 2023Publication date: May 9, 2024Inventors: Meng-Han Chou, Kuo-Ju Chen, Su-Hao Liu, Huicheng Chang, Yee-Chia Yeo
-
Publication number: 20240154021Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.Type: ApplicationFiled: December 29, 2022Publication date: May 9, 2024Inventors: TING-CHANG CHANG, Wei-Chen Huang, Shih-Kai Lin, Yong-Ci Zhang, Sheng-Yao Chou, Chung-Wei Wu, Po-Hsun Chen
-
Publication number: 20240151619Abstract: A reciprocating friction and wear test apparatus includes a frame unit and an abrader unit. The frame unit includes a frame that has a bottom wall formed with an opening and two side walls extending upwardly from the bottom wall. The abrader unit includes an abrader fixture, an abrader, two first sensor members, and two adjustment members. The abrader fixture extends through the opening and is pivotable relative to the bottom wall. The abrader is affixed to the abrader fixture. The two first sensor members are respectively mounted to the side walls. The two adjustment members are respectively connected to the first sensor members, extend respectively through the first sensor members, extend respectively through the side walls, and are movable toward the abrader fixture to tightly abut against the abrader fixture.Type: ApplicationFiled: February 13, 2023Publication date: May 9, 2024Inventor: Chau-Chang CHOU
-
Publication number: 20240145596Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.Type: ApplicationFiled: January 2, 2024Publication date: May 2, 2024Inventors: Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Syun-Ming Jang, Meng-Han Chou
-
Patent number: 11973052Abstract: An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.Type: GrantFiled: April 28, 2021Date of Patent: April 30, 2024Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Chien-Chang Li, Hung-Yu Chou, Sheng-Wen Huang, Zi-Xian Zhan, Byron Lovell Williams
-
Patent number: 11973027Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.Type: GrantFiled: March 23, 2022Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho
-
Patent number: 11962015Abstract: Provided are an electrolytic copper foil, an electrode and a lithium-ion cell comprising the same. The electrolytic copper foil has a first surface and a second surface opposite the first surface. An absolute difference of the FWHM of the characteristic peaks of (111) planes of the first surface and the second surface analyzed by GIXRD is less than 0.14, the first and the second surfaces each have a nanoindentation hardness of 0.3 GPa to 3.0 GPa, and the yield strength of the electrolytic copper foil is more than 230 MPa. By controlling the absolute difference of the FWHM of the characteristic peaks of (111) plane of these two surfaces, the nanoindentation hardness of these two surfaces and the yield strength, the electrolytic copper foil can have improved tolerance to the repeated charging and discharging and reduced warpage, thereby improving the yield rate and value of the lithium-ion cell.Type: GrantFiled: September 8, 2022Date of Patent: April 16, 2024Assignee: CHANG CHUN PETROCHEMICAL CO., LTD.Inventors: Ting-Mu Chuang, Sung-Shiuan Lin, Yao-Sheng Lai, Jui-Chang Chou
-
Patent number: 11962014Abstract: Electrodeposited copper foils having adequate puncture strength to withstand both pressure application during consolidation with negative electrode active materials during manufacture, as well as expansion/contraction during repeated charge/discharging cycles when used in a rechargeable secondary battery are described. These copper foils find specific utility as current collectors in rechargeable secondary batteries, particularly in lithium secondary battery with high capacity. Methods of making the copper foils, methods of producing negative electrode for use in lithium secondary battery and lithium secondary battery of high capacity are also described.Type: GrantFiled: December 17, 2018Date of Patent: April 16, 2024Assignee: CHANG CHUN PETROCHEMICAL CO., LTD.Inventors: Huei-Fang Huang, Kuei-Sen Cheng, Yao-Sheng Lai, Jui-Chang Chou
-
Publication number: 20240111121Abstract: An imaging lens module includes a plastic lens barrel, a first optical element assembly and a second optical element assembly, wherein both of the first optical element assembly and the second optical element assembly are disposed in the plastic lens barrel. The plastic lens barrel includes a first inner annular surface and a second inner annular surface. The first inner annular surface forms a first receiving space. The second inner annular surface forms a second receiving space. The first optical element assembly is disposed in the first receiving space and includes a plurality of optical lens elements and a first retainer. The second optical element assembly is disposed in the second receiving space and includes a first light blocking sheet and a second retainer.Type: ApplicationFiled: December 13, 2023Publication date: April 4, 2024Inventors: Chien-Hsun WU, Lin-An CHANG, Ming-Ta CHOU
-
Publication number: 20240111139Abstract: An imaging lens assembly module includes a lens barrel, a catadioptric lens assembly, an imaging lens assembly, a first fixing element and a second fixing element. The lens barrel has a first relying surface and a second relying surface, which face towards an object side of the imaging lens assembly module. The catadioptric lens assembly relies on the first relying surface. The imaging lens assembly is disposed on an image side of the catadioptric lens assembly, and relies on the second relying surface. The first fixing element is for fixing the catadioptric lens assembly to the lens barrel. The second fixing element is for fixing the imaging lens assembly to the lens barrel. The catadioptric lens assembly is for processing at least twice internal reflections of an image light in the imaging lens assembly module, and for providing optical refractive power.Type: ApplicationFiled: September 26, 2023Publication date: April 4, 2024Inventors: Lin-An CHANG, Chung Hao CHEN, Wen-Yu TSAI, Ming-Ta CHOU
-
Publication number: 20240103345Abstract: An image capturing unit includes an imaging element and a dual-shot injection-molded optical folding element that are adjacent to each other. The imaging element is configured for an imaging light to pass through. The dual-shot injection-molded optical folding element includes a first part and a second part. The first part is made of transparent material. The first part has a reflective surface configured to reflect the imaging light. The second part is made of opaque material, and the second part is fixed at periphery of the first part. The second part includes a supporting portion configured to support the dual-shot injection-molded optical folding element. The supporting portion maintains the dual-shot injection-molded optical folding element at a predetermined position corresponding to the imaging element through mechanism assembly.Type: ApplicationFiled: December 5, 2023Publication date: March 28, 2024Applicant: LARGAN PRECISION CO., LTD.Inventors: Lin An CHANG, Pei-Chi CHANG, Ming-Ta CHOU
-
Patent number: 11935981Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: GrantFiled: June 30, 2021Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
-
Publication number: 20240085676Abstract: A light-folding element includes an object-side surface, an image-side surface, a reflection surface and a connection surface. The reflection surface is configured to reflect imaging light passing through the object-side surface to the image-side surface. The connection surface is connected to the object-side, image-side and reflection surfaces. The light-folding element has a recessed structure located at the connection surface. The recessed structure is recessed from the connection surface an includes a top end portion, a bottom end portion and a tapered portion located between the top end and bottom end portions. The top end portion is located at an edge of the connection surface. The tapered portion has two tapered edges located on the connection surface. The tapered edges are connected to the top end and bottom end portions. A width of the tapered portion decreases in a direction from the top end portion towards the bottom end portion.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Applicant: LARGAN PRECISION CO., LTD.Inventors: Min-Chun LIAO, Lin An CHANG, Ming-Ta CHOU, Jyun-Jia CHENG, Cheng-Feng LIN, Ming-Shun CHANG
-
Publication number: 20240079485Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.Type: ApplicationFiled: October 27, 2022Publication date: March 7, 2024Applicant: Powerchip Semiconductor Manufacturing CorporationInventors: Jih-Wen Chou, Chih-Hung Lu, Bo-An Tsai, Zheng-Chang Mu, Po-Hsien Yeh, Robin Christine Hwang
-
Publication number: 20240071833Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.Type: ApplicationFiled: August 25, 2022Publication date: February 29, 2024Inventors: Yi-Huan Chen, Huan-Chih Yuan, Yu-Chang Jong, Scott Yeh, Fei-Yun Chen, Yi-Hao Chen, Ting-Wei Chou
-
Publication number: 20240069305Abstract: An imaging lens assembly module includes an imaging lens element set, a lens carrier and a light blocking structure. The imaging lens element set has an optical axis. At least one lens element of the lens elements is disposed in the lens carrier. The light blocking structure includes a light blocking opening. The optical axis passes through the light blocking opening, and the light blocking opening includes at least two arc portions and a shrinking portion. Each of the arc portions has a first curvature radius for defining a maximum diameter of the light blocking opening. The shrinking portion is connected to the arc portions for forming the light blocking opening into a non-circular shape. The shrinking portion includes at least one protruding arc which extends and shrinks gradually from the shrinking portion to the optical axis, and the protruding arc has a second curvature radius.Type: ApplicationFiled: November 8, 2023Publication date: February 29, 2024Inventors: Lin-An CHANG, Ming-Ta CHOU, Shu-Yun YANG, Cheng-Feng LIN
-
Publication number: 20240069416Abstract: A light path folding element includes a first surface, a second surface, a first reflecting surface and a second reflecting surface. A light travels from the first surface into the light path folding element. The second surface is disposed relative to the first surface along a first direction and is parallel to the first surface, and the first direction is perpendicular to the first surface. The first reflecting surface connects the first surface and the second surface, an acute angle is formed between the first reflecting surface and the first surface, and the light forms an internal reflection via the first reflecting surface. The light forms another internal reflection via the second reflecting surface. The light path folding element further includes a light blocking structure, which extends from at least one of the first surface and the second surface into the light path folding element.Type: ApplicationFiled: August 24, 2023Publication date: February 29, 2024Inventors: Ssu-Hsin LIU, Wei-Che TUNG, Lin-An CHANG, Ming-Ta CHOU
-
Patent number: 11914217Abstract: An imaging lens assembly has an optical axis, and includes a plastic carrier element and an imaging lens element set. The plastic carrier element includes an object-side surface, an image-side surface, an outer surface and an inner surface. The object-side surface includes an object-side opening. The image-side surface includes an image-side opening. The inner surface is connected to the object-side opening and the image-side opening. The imaging lens element set is disposed in the plastic carrier element, and includes at least three lens elements, each of at least two adjacent lens elements of the lens elements includes a first axial assembling structure, the first axial assembling structures are corresponding to and connected to each other. A solid medium interval is maintained between the adjacent lens elements and the inner surface. The solid medium interval is directly contacted with the adjacent lens elements and the inner surface.Type: GrantFiled: July 22, 2020Date of Patent: February 27, 2024Assignee: LARGAN PRECISION CO., LTD.Inventors: Jyun-Jia Cheng, Lin-An Chang, Ming-Ta Chou, Cheng-Feng Lin
-
Publication number: 20240018149Abstract: This disclosure relates to bivalent compounds (e.g., bi-functional small molecule compounds), compositions comprising one or more of the bivalent compounds, and to methods of use the bivalent compounds for the degrading target proteins associated with a disease or condition.Type: ApplicationFiled: June 29, 2023Publication date: January 18, 2024Inventors: Chu-Chiang LIN, Hung-Chuan CHEN, Pei-Chin Xizhou, Chih-Chang CHOU