Abstract: A laser diode includes a light-emitting stack, and a distributed Bragg reflection (DBR) cover layer in contact with the light-emitting stack. The light-emitting stack includes an N-type layer, an active layer, and a P-type layer that has a ridged member. The ridged member has an end face including a first inclined surface that inclines with respect to a top surface of the ridged member in an outward and downward direction from the top surface. A contact interface between the ridged member and the DBR cover layer includes the first inclined surface. A method for making the laser diode is also disclosed.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial layered structure, and a strain tuning layer. The epitaxial layered structure includes a buffer layer, an N-type cladding layer, an active layer, and a P-type cladding layer formed on the substrate in such order. The active layer includes a multiple quantum well structure. The strain tuning layer is disposed between the N-type cladding layer and the active layer, and has a lattice constant that is smaller than that of the N-type cladding layer. A method for manufacturing the LED is also disclosed.

Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.

Abstract: A nitride based semiconductor device including a buffer layer, a three-dimensional stress tuning layer formed on the buffer layer, a first-type semiconductor layer formed on the three-dimensional stress tuning layer, an active layer formed on the first-type semiconductor layer, and a second-type semiconductor layer formed on the active layer. The three-dimensional stress tuning layer and the buffer layer cooperatively define an interface therebetween. The interface has a three-dimensional composition distribution.

Abstract: A semiconductor device includes a substrate, a stress tuning layer disposed on the substrate, an aluminum nitride (AlN) buffer layer disposed on the stress tuning layer, an n-type semiconductor layer disposed on the AlN buffer layer, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer disposed on the active layer. The stress tuning layer has a lattice constant larger than that of the AlN buffer layer and no larger than that of the n-type semiconductor layer. A method of manufacturing the semiconductor device is also provided.

Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.

Abstract: A nitride based semiconductor device including a buffer layer, a three-dimensional stress tuning layer formed on the buffer layer, a first-type semiconductor layer formed on the three-dimensional stress tuning layer, an active layer formed on the first-type semiconductor layer, and a second-type semiconductor layer formed on the active layer. The three-dimensional stress tuning layer and the buffer layer cooperatively define an interface therebetween. The interface has a three-dimensional composition distribution.

Abstract: A fabrication method of a nitride semiconductor LED includes, an AlxInyGa1-x-yN material layer is deposited by CVD between an AlN thin film layer by PVD and a gallium nitride series layer by CVD, to reduce the stress effect between the AlN thin film layer and the nitride layer, improve the overall quality of the LED and efficiency. An AlN thin film layer is deposited on a patterned substrate having a larger depth by PVD, and a thin nitrogen epitaxial layer is deposited on the AIN thin film layer by CVD, which reduces the stress by reducing the thickness of the epitaxial layer and improves warpage of the wafer and electric uniformity of the single wafer; the light extraction efficiency is improved by using the large depth patterned substrate; further, the doping of high-concentration impurity in the active layer effectively reduces voltage characteristics without affecting leakage, thereby improving the overall yield.

Abstract: A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1). The super-lattice buffer layer can mitigate corrosion to the side wall by chemical solution during chip fabrication, and improve chip yield. Fabrication the super-lattice buffer layer to achieve the effects can be realized, for example, using chemical vapor deposition (CVD).

Abstract: A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1). The super-lattice buffer layer can mitigate corrosion to the side wall by chemical solution during chip fabrication, and improve chip yield. Fabrication the super-lattice buffer layer to achieve the effects can be realized, for example, using chemical vapor deposition (CVD).

Abstract: A fabrication method of a nitride semiconductor LED includes, an AlxInyGa1-x-yN material layer is deposited by CVD between an AlN thin film layer by PVD and a gallium nitride series layer by CVD, to reduce the stress effect between the AlN thin film layer and the nitride layer, improve the overall quality of the LED and efficiency. An AlN thin film layer is deposited on a patterned substrate having a larger depth by PVD, and a thin nitrogen epitaxial layer is deposited on the AlN thin film layer by CVD, which reduces the stress by reducing the thickness of the epitaxial layer and improves warpage of the wafer and electric uniformity of the single wafer; the light extraction efficiency is improved by using the large depth patterned substrate; further, the doping of high-concentration impurity in the active layer effectively reduces voltage characteristics without affecting leakage, thereby improving the overall yield.

Abstract: A method of fabricating a substrate for semiconductor light emitting devices is provided. The method includes forming a nanocrystal structure on a surface of the substrate which is a single crystal material, wherein the nanocrystal structure has an etched region and an unetched region. Next, a nitride semiconductor material is grown on the surface of the single crystal material with an epitaxial process, so as to form a substrate. Due to the periodicity of the nanocrystal structure, the semiconductor material grown on the substrate has fewer defects, and the material stress is reduced. Besides, the nanocrystal structure is capable of diffracting an electromagnetic wave, such that a higher light emitting efficiency and a higher output power may be obtained accordingly.

Abstract: A substrate for semiconductor light emitting devices is provided. The substrate is characterized in that the substrate is a single crystal material and has a nanocrystal structure capable of diffracting an electromagnetic wave. The nanocrystal structure is disposed on a surface portion of the substrate and includes an etched region and an unetched region, wherein the etched region has a depth of 10-200 nm. Due to the periodicity of the nanocrystal structure, the semiconductor material grown on the substrate has fewer defects, and the material stress is reduced.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Abstract: A substrate for semiconductor light emitting devices is provided. The substrate is characterized in that the substrate is a single crystal material and has a nanocrystal structure capable of diffracting an electromagnetic wave. The nanocrystal structure is disposed on a surface portion of the substrate and includes an etched region and an unetched region, wherein the etched region has a depth of 10-200 nm. Due to the periodicity of the nanocrystal structure, the semiconductor material grown on the substrate has fewer defects, and the material stress is reduced.

Abstract: A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

Abstract: A light emitting diode (LED) is added aluminum atom in every layer of InGaN light emitting diode to emit a UV light with wavelength between 300 nm and 380 nm which is not able to see by humans. This LED can co-operate with different colors of luminescent material layer or quantum well/quantum dot structures to emit different color (wavelength) of light, which are different colors (wavelengths) of LED.

Abstract: A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.