Patents by Inventor Chang-Fen Hu

Chang-Fen Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11966241
    Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Huan-Neng Chen, Yen-Lin Liu, Chia-Wei Hsu, Jo-Yu Wu, Chang-Fen Hu, Shao-Yu Li, Bo-Ting Chen
  • Patent number: 11967958
    Abstract: In some embodiments, digital logic components, such as those found in standard cells in integrated circuit devices, are used to synthesize signals with controllable waveforms that result in transmitted signals that meet certain requirements, such as above-threshold high openings and below-threshold over/under-shooting. In some embodiments, driving buffers with logic controls and delay chains are used to achieve controllable slew rates at rising and falling edges to minimize over/under shooting behavior in signals. In some embodiments, control logic and delay chains produce controllable rising/falling “stair-type” edges to obtain optimized damping waveform.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Huan-Neng Chen, Chang-Fen Hu, Shao-Yu Li
  • Publication number: 20230238380
    Abstract: A circuit structure is provided. The circuit structure may include a first die area including an output gate, a second die area including a circuit and an input gate and a die-to-die interconnect. The input gate may include a transistor. The circuit may be connected between the die-to-die interconnect and a gate region of the transistor. The circuit may include a MOS transistor. A first source/drain region of the MOS transistor may be connected to the die-to-die interconnect.
    Type: Application
    Filed: March 27, 2023
    Publication date: July 27, 2023
    Inventors: CHANG-FEN HU, SHAO-YU LI, KUO-JI CHEN, CHIH-PENG LIN, CHUEI-TANG WANG, CHING-FANG CHEN
  • Patent number: 11646313
    Abstract: A circuit structure is provided. The circuit structure may include a first die area including an output gate, a second die area including a circuit and an input gate and a die-to-die interconnect. The input gate may include a transistor. The circuit may be connected between the die-to-die interconnect and a gate region of the transistor. The circuit may include a PMOS transistor and an NMOS transistor. A first source/drain region of the PMOS transistor may be connected to a first source/drain region of the NMOS transistor and the die-to-die interconnect.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: May 9, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chang-Fen Hu, Shao-Yu Li, Kuo-Ji Chen, Chih-Peng Lin, Chuei-Tang Wang, Ching-Fang Chen
  • Publication number: 20230009027
    Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.
    Type: Application
    Filed: February 11, 2022
    Publication date: January 12, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Huan-Neng Chen, Yen-Lin LIU, Chia-Wei Hsu, Jo-Yu Wu, CHANG-FEN HU, Shao-Yu Li, Bo-Ting Chen
  • Publication number: 20220352880
    Abstract: In some embodiments, digital logic components, such as those found in standard cells in integrated circuit devices, are used to synthesize signals with controllable waveforms that result in transmitted signals that meet certain requirements, such as above-threshold high openings and below-threshold over/under-shooting. In some embodiments, driving buffers with logic controls and delay chains are used to achieve controllable slew rates at rising and falling edges to minimize over/under shooting behavior in signals. In some embodiments, control logic and delay chains produce controllable rising/falling “stair-type” edges to obtain optimized damping waveform.
    Type: Application
    Filed: November 30, 2021
    Publication date: November 3, 2022
    Inventors: Huan-Neng Chen, Chang-Fen Hu, Shao-Yu Li
  • Publication number: 20220293597
    Abstract: A circuit structure is provided. The circuit structure may include a first die area including an output gate, a second die area including a circuit and an input gate and a die-to-die interconnect. The input gate may include a transistor. The circuit may be connected between the die-to-die interconnect and a gate region of the transistor. The circuit may include a PMOS transistor and an NMOS transistor. A first source/drain region of the PMOS transistor may be connected to a first source/drain region of the NMOS transistor and the die-to-die interconnect.
    Type: Application
    Filed: June 24, 2021
    Publication date: September 15, 2022
    Inventors: CHANG-FEN HU, SHAO-YU LI, KUO-JI CHEN, CHIH-PENG LIN, CHUEI-TANG WANG, CHING-FANG CHEN
  • Patent number: 9117678
    Abstract: A semiconductor device includes a semiconductor region, a first active region in the semiconductor region, a second active region in the semiconductor region, and a conductive gate disposed above the first active region and the second active region. A first contact of the conductive gate is configured to couple to a first node of a circuit associated with the semiconductor device. Moreover, a second contact of the conductive gate is configured to couple to a second node of a circuit associated with the semiconductor device. A resistive device is defined between the first contact and the second contact.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: August 25, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chang-Fen Hu, Wun-Jie Lin
  • Publication number: 20150171073
    Abstract: A semiconductor device includes a semiconductor region, a first active region in the semiconductor region, a second active region in the semiconductor region, and a conductive gate disposed above the first active region and the second active region. A first contact of the conductive gate is configured to couple to a first node of a circuit associated with the semiconductor device. Moreover, a second contact of the conductive gate is configured to couple to a second node of a circuit associated with the semiconductor device. A resistive device is defined between the first contact and the second contact.
    Type: Application
    Filed: December 13, 2013
    Publication date: June 18, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: CHANG-FEN HU, WUN-JIE LIN
  • Patent number: 7500214
    Abstract: I. A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: March 3, 2009
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ker-Min Chen, Ming-Hsiang Song, Chang-Fen Hu
  • Patent number: 7158357
    Abstract: An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) is disclosed. The ESD protection circuit has a RC module having a resistor and capacitor connected in series; and a current dissipation module for dissipating the ESD, wherein the capacitor is formed by a thick native gate oxide of a transistor, and wherein the thick native gate oxide prevents leakage current formed therethrough so that to avoid leakage current through the current dissipation module during a normal operation of the IC.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: January 2, 2007
    Assignee: Taiwan Semiconductor Manufacturing Xo., Ltd.
    Inventor: Chang-fen Hu
  • Publication number: 20060195811
    Abstract: I. A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.
    Type: Application
    Filed: May 1, 2006
    Publication date: August 31, 2006
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ker-Min Chen, Ming-Hsiang Song, Chang-Fen Hu
  • Patent number: 7062740
    Abstract: A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.
    Type: Grant
    Filed: May 22, 2003
    Date of Patent: June 13, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ker-Min Chen, Ming-Hsiang Song, Chang-Fen Hu
  • Publication number: 20050225911
    Abstract: An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) is disclosed. The ESD protection circuit has a RC module having a resistor and capacitor connected in series; and a current dissipation module for dissipating the ESD, wherein the capacitor is formed by a thick native gate oxide of a transistor, and wherein the thick native gate oxide prevents leakage current formed therethrough so that to avoid leakage current through the current dissipation module during a normal operation of the IC.
    Type: Application
    Filed: April 2, 2004
    Publication date: October 13, 2005
    Inventor: Chang-fen Hu
  • Patent number: 6949967
    Abstract: A new method to reduce switching noise on an integrated circuit device is achieved. The method comprises providing an integrated circuit device comprising a power supply, a ground, and a plurality of switchable capacitors. Each switchable capacitor is connected from the power supply to ground. The operating mode of the integrated circuit device is tracked. An optimal capacitance value is selected based on the operating mode. A set of switchable capacitors from the plurality of switchable capacitors is selected to thereby connect the optimal capacitance value from the power supply to ground.
    Type: Grant
    Filed: September 24, 2003
    Date of Patent: September 27, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Wen-Tai Wang, Chang-Fen Hu
  • Publication number: 20050062523
    Abstract: A new method to reduce switching noise on an integrated circuit device is achieved. The method comprises providing an integrated circuit device comprising a power supply, a ground, and a plurality of switchable capacitors. Each switchable capacitor is connected from the power supply to ground. The operating mode of the integrated circuit device is tracked. An optimal capacitance value is selected based on the operating mode. A set of switchable capacitors from the plurality of switchable capacitors is selected to thereby connect the optimal capacitance value from the power supply to ground.
    Type: Application
    Filed: September 24, 2003
    Publication date: March 24, 2005
    Inventors: Wen-Tai Wang, Chang-Fen Hu
  • Publication number: 20040237059
    Abstract: A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.
    Type: Application
    Filed: May 22, 2003
    Publication date: November 25, 2004
    Inventors: Ker-Min Chen, Ming-Hsiang Song, Chang-Fen Hu