Patents by Inventor Chang-Feng Yan

Chang-Feng Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
    Patent number: 11605674
    Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
    Type: Grant
    Filed: May 29, 2021
    Date of Patent: March 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yan, Samuel C. Pan
  • METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHOD OF OPERATION, AND MEMORY DEVICE INCLUDING THE SAME
    Publication number: 20210288110
    Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
    Type: Application
    Filed: May 29, 2021
    Publication date: September 16, 2021
    Inventors: Jenn-Gwo HWU, Hao-Hsiung LIN, Chang-Feng YAN, Samuel C. PAN
  • Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
    Patent number: 11024674
    Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: June 1, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yan, Samuel C. Pan
  • METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHOD OF OPERATION, AND MEMORY DEVICE INCLUDING THE SAME
    Publication number: 20200135809
    Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 30, 2020
    Inventors: Jenn-Gwo HWU, Hao-Hsiung LIN, Chang-Feng YAN, Samuel C. PAN
  • Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
    Patent number: 10515998
    Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: December 24, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yan, Samuel C. Pan