Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: The present application relates to a dispatch method for a production line in a semiconductor process, a storage medium and a semiconductor device. The dispatch method for a production line in a semiconductor process can acquire an overlay error reference curve of a product lot to be exposed in equipment and set an overlay error range according to the overlay error reference curve. At the end of exposure, an overlay error for the product lot to be exposed can be acquired, and it can be determined whether the overlay error falls into the overlay error range. If the overlay error for the product lot to be exposed does not fall into the overlay error range, the product lot to be exposed can be continuously machined by this equipment.

Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An adjustable resistance tail plug includes a fixed seat, an adjusting wheel, a sleeve, a screw rod unit, an outer casing, a friction wheel and a clutch spring. The friction wheel engages threadably the screw rod unit, and is driven by the sleeve to move relative to the outer casing, so as to adjust a friction force between the outer casing and the friction wheel. The clutch spring is switchable between a contracted state and an expanded state. When in the contracted state, the clutch spring is tightened to abut against the second circumferential surface so that the sleeve is prevented from rotating relative to the fixed seat by the clutch spring. When in the expanded state, the clutch spring releases the second circumferential surface, and the adjusting wheel is rotatable with the sleeve through the clutch spring.

Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.

Abstract: An optical element including an optically transparent lens which defines a curved surface having a steepness given by an R/# of from about 0.5 to about 1.0. A film is positioned on the curved surface. The film includes an index layer. A composite layer is positioned on the curved surface having a refractive index greater than the index layer. The composite layer includes HfO2 and Al2O3. The composite layer has a mole fraction X of HfO2, wherein X is from about 0.05 to about 0.95 and a mole fraction of Al2O3 in the composite layer is 1?X.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.

Abstract: An optical lens assembly includes, in order from an object side to an image side: a stop, a first lens, a second lens, a third lens, a fourth lens, and fifth lens, wherein an Abbe number of the second lens is vd2, an Abbe number of the third lens is vd3, a central thickness of the second lens along the optical axis is CT2, a central thickness of the third lens along the optical axis is CT3, the aperture number of the optical lens assembly is Fno, an incident angle of a main light incident at the position of 60% of the maximum image height of the optical lens assembly is CRA6, and the following conditions are satisfied: 3.54<(vd3*CT3?vd2*CT2)/Fno<8.18 and 28.25<CRA6<35.76.

Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.

Abstract: The present invention is related to a novel positive electrode active material for lithium-ion battery. The positive electrode active material is expressed by the following formula: Li1.2NixMn0.8-x-yZnyO2, wherein x and y satisfy 0<x?0.8 and 0<y?0.1. In addition, the present invention provides a method of manufacturing the positive electrode active material. The present invention further provides a lithium-ion battery which uses said positive electrode active material.

Abstract: In some examples, a device can include a first antenna having a first wireless connection with a first computing device, a second antenna having a second wireless connection with a second computing device, and a controller to determine a signal strength of the first wireless connection and a signal strength of the second wireless connection, designate, in response to the signal strength of the first wireless connection being greater than a threshold signal strength, the first wireless connection as an active connection and the second wireless connection as a standby connection, and cause the peripheral device to communicate with the first computing device via the active connection of the first antenna while maintaining the second wireless connection to the second computing device via the second antenna, where the second wireless connection remains as the standby connection.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a memory cell overlying a substrate and comprising a top electrode. A sidewall spacer structure is disposed along sidewalls of the memory cell. The sidewall spacer structure comprises a first spacer layer on the memory cell, a second spacer layer around the first spacer layer, and a third spacer layer around the second spacer layer. The second spacer layer comprises a lateral segment adjacent to a vertical segment. The lateral segment abuts the top electrode and has a top surface aligned with or disposed below a top surface of the top electrode. A first conductive structure overlies the memory cell and contacts the lateral segment and the top electrode.

Abstract: A chiplet system and a positioning method thereof are provided. The positioning method of the chiplet system includes the following steps. Two end chiplets and a plurality of middle chiplets are classified. A quantity calculation packet is transmitted and accumulated from each of the end chiplets towards another end to analyze a quantity of middle chiplets. A serial number comparison packet is transmitted and accumulated from each of the middle chiplets connected to one of the end chiplets towards another end to set a starting point. An identify number setting packet is transmitted and accumulated from the middle chiplet set as the starting point towards another end to set a positioning number of each of the middle chiplets.

Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes providing a substrate for an interposer, and forming a conductive interconnect structure in and on the substrate for connecting a group of selected IC dies. The method includes forming warpage-reducing trenches in non-routing regions of the interposer, wherein the warpage-reducing trenches are sized and positioned based on a warpage characteristic to reduce the warpage of the chip package structure. The method also includes depositing a warpage-relief material in the warpage-reducing trenches according to the warpage characteristic to reduce the warpage of the chip package structure, and bonding the group of selected IC dies to the interposer to form a chip package structure.

Abstract: An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

Abstract: A display substrate and related devices are provided. The display substrate includes a plurality of first sub-pixels, second sub-pixels and third sub-pixels. In a first direction, the first sub-pixels and the third sub-pixels are arranged alternately to form a plurality of first sub-pixel rows, the second sub-pixels form a plurality of second sub-pixel rows, the first sub-pixel rows and the second sub-pixel rows are arranged alternately in a second direction, connection lines of center points of two first sub-pixels and two third sub-pixels form a first virtual quadrilateral, the two first sub-pixels are located at two vertex angles of the first virtual quadrilateral which are opposite to each other, one second sub-pixel is located within the first virtual quadrilateral, and the first virtual quadrilateral includes two interior angles each being equal to 90° and two interior angles each being not equal to 90°.

Abstract: A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.