Abstract: The present disclosure provides methods, drug combinations and kits for treating, ameliorating, reversing and/or preventing a Helicobacter pylori (H. pylori) infection in a patient in need thereof.

Abstract: An optical imaging lens includes six lens elements. The object-side surface of the first lens element has a convex part in a vicinity of the periphery of the first lens element, the image-side surface of the second lens element has a concave part in a vicinity of the periphery of the first lens element, the object-side surface of the third lens element has a convex part in a vicinity of the optical axis, the image-side surface of the fourth lens element has a convex part in a vicinity of the periphery of the fourth lens element, the image-side surface of the fifth lens element has a concave part in a vicinity of the optical axis, and the sixth lens element has negative refractive power.

Abstract: An optical imaging lens includes six lens elements. The object-side surface of the first lens element has a convex part in a vicinity of the periphery of the first lens element, the image-side surface of the second lens element has a concave part in a vicinity of the periphery of the first lens element, the object-side surface of the third lens element has a convex part in a vicinity of the optical axis, the image-side surface of the fourth lens element has a convex part in a vicinity of the periphery of the fourth lens element, the image-side surface of the fifth lens element has a concave part in a vicinity of the optical axis, and the sixth lens element has negative refractive power.

Abstract: An optical imaging lens includes six lens elements. The object-side surface of the first lens element has a convex part in a vicinity of the periphery of the first lens element, the image-side surface of the second lens element has a concave part in a vicinity of the periphery of the first lens element, the object-side surface of the third lens element has a convex part in a vicinity of the optical axis, the image-side surface of the fourth lens element has a convex part in a vicinity of the periphery of the fourth lens element, the image-side surface of the fifth lens element has a concave part in a vicinity of the optical axis, and the sixth lens element has negative refractive power.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side along an optical axis. The first lens element has negative refractive power. The object-side surface of the fourth lens element has a convex part in a vicinity of a periphery of the fourth lens element. The image-side surface of the sixth lens element has a convex part in a vicinity of a periphery of the sixth lens element. The effective focal length of the optical imaging lens is EFL, and a sum of all air gaps from the first lens element to the sixth lens element along the optical axis is AAG, and EFL and AAG satisfy 0.9?EFL/AAG?2.6.

Abstract: A method and an apparatus for determining expansion compensation in a photoetching process, and a method for manufacturing a semiconductor device are provided. A relative vector misalignment value of a first wafer and a second wafer after being bonded is obtained based on a relative position relationship between a first alignment pattern of the first wafer and a second alignment pattern of the second wafer in a boding structure. A relative expansion value of the first wafer and the second wafer is obtained based on the relative vector misalignment value. A developing expansion compensation value in the photoetching process is obtained. The expansion compensation value is used to the photoetching process of a first conductor layer including the first alignment pattern of the first wafer and/or a second conductor layer including the second alignment pattern of the second wafer.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side along an optical axis. The object-side surface of the first lens element has a convex portion in a vicinity of a periphery of the first lens element. The second lens element has negative refractive power. The object-side surface of the second lens element has a convex portion in a vicinity of a periphery of the second lens element. The image-side surface of the fifth lens element has a concave portion in a vicinity of the optical axis. The image-side surface of the sixth lens element has a concave portion in a vicinity of the optical axis.

Abstract: A thermal extrusion method to fabricate large-dimension superhydrophobic cylinder pillar arrays with droplet pancake bouncing phenomenon. Preparing thermal extrusion mold: the through-hole arrays with 0.8˜1.25 mm diameter, 0.25 mm interval space and 0.6˜1.0 mm height are first obtained on metals, and are then polished, rinsed and dried. Thermal extrusion: polymer materials are first thermally extruded on the obtained mold and cooled to room temperature. Demold: excess polymer materials flowing from the through hole are cut off and then the polymer cylinder pillar arrays are lifted off from the mold. Superhydrophobic treatment: the whole polymer sample is treated using mixed liquid spray consisting of titanium oxide nanoparticles dispersed in fluoroalkylsilane ethanol solution, and the superhydrophobic cylinder pillar arrays are obtained.

Abstract: A multi-wafer stack structure and fabricating method thereof are disclosed. In the multi-wafer stack structure, the first interconnection layer is electrically connected to the second metal layer and the first metal layer via the first opening, the second interconnection layer is electrically connected to the first interconnection layer via the second openings, the third interconnection layer is electrically connected to the third metal layer via the third openings, and the second interconnection layer is in contact with the third interconnection layer, so that there is no need to reserve the wire pressure welding space between the wafers and a silicon substrate is eliminated, the overall device thickness of the multi-wafer stack package is reduced. Moreover, the design processing of the silicon substrate and a plurality of common pads on the silicon substrate is eliminated, thereby reducing the parasitic capacitance and power loss, and increasing the transmission speed.

Abstract: A semiconductor device and a manufacturing method thereof are disclosed. In which a first opening and a second opening are vertically separated, and are no longer restricted by the condition that a deep upper opening needs to be filled with a thick photoresist when a TSV nested hole in vertical communication forms a middle opening and lower opening, thereby satisfying devices with different thicknesses requirements. The design is no longer restricted by the lateral process of the TSV nested hole, thereby enhancing the flexibility of the design. In the photolithography process, the deep hole does not need to be filled with the photoresist, the photoresist does not need to be thick, thereby reducing the complexity of the photolithography process and improving the exposure effect. The first metal layer and the second metal layer are directly led out via a first trench, thereby simplifying the process and reducing the production cost.

Abstract: A semiconductor device and a manufacturing method thereof are disclosed. In the device, the isolation layer is used to prevent the first metal layer and the second metal layer which are over-etched and back-splashed from diffusing to a first substrate; and the isolation layer serves as a barrier layer to prevent an interconnection layer from diffusing into the first substrate. Further, the isolation layer includes a silicon nitride layer, which is advantageous for preventing the metal layers from back-splashing and diffusing to the sidewall of the first substrate. The isolation layer further includes a first silicon oxide layer and a second silicon oxide layer, wherein the second silicon oxide layer is used to protect the silicon nitride layer from being etched and consumed and the first silicon oxide layer is used to improve the adhesion between the silicon nitride layer and the first substrate.

Abstract: A method and an apparatus for determining expansion compensation in a photoetching process, and a method for manufacturing a semiconductor device are provided. A relative vector misalignment value of a first wafer and a second wafer after being bonded is obtained based on a relative position relationship between a first alignment pattern of the first wafer and a second alignment pattern of the second wafer in a boding structure. A relative expansion value of the first wafer and the second wafer is obtained based on the relative vector misalignment value. A developing expansion compensation value in the photoetching process is obtained. The expansion compensation value is used to the photoetching process of a first conductor layer including the first alignment pattern of the first wafer and/or a second conductor layer including the second alignment pattern of the second wafer.

Abstract: A multi-wafer stacking structure is disclosed. In which a first interconnection layer is electrically connected to a second metal layer and a first metal layer via a first opening, a second interconnection layer is electrically connected to the first interconnection layer via a second opening, a third interconnection layer is electrically connected to a third metal layer via a third opening, and the second interconnection layer is electrically connected to the third interconnection layer. It is unnecessary to reserve a bonding lead space between wafers, a silicon substrate is eliminated, and the multi-wafer stacking thickness is reduced while multi-wafer interconnection is realized, so that the overall device thickness is reduced after multi-wafer stacked package. Moreover, there is no need of leads, so as to eliminate design processing of a silicon substrate and a plurality of shared bonding pads on the silicon substrate.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side along an optical axis. The object-side surface of the first lens element has a convex portion in a vicinity of a periphery of the first lens element. The second lens element has negative refractive power. The object-side surface of the second lens element has a convex portion in a vicinity of a periphery of the second lens element. The image-side surface of the fifth lens element has a concave portion in a vicinity of the optical axis. The image-side surface of the sixth lens element has a concave portion in a vicinity of the optical axis.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side along an optical axis. The first lens element has negative refractive power. The object-side surface of the fourth lens element has a convex part in a vicinity of a periphery of the fourth lens element. The image-side surface of the sixth lens element has a convex part in a vicinity of a periphery of the sixth lens element. The effective focal length of the optical imaging lens is EFL, and a sum of all air gaps from the first lens element to the sixth lens element along the optical axis is AAG, and EFL and AAG satisfy 0.9?EFL/AAG?2.6.

Abstract: A multi-wafer stacking structure and a fabrication method thereof are disclosed. A first dielectric layer and a second dielectric layer are bonded to each other, a first interconnection layer is electrically connected with a second metal layer and a first metal layer via a first opening; a third dielectric layer and an insulating layer are bonded to each other, and a second interconnection layer is electrically connected with a third metal layer and the first interconnection layer via a second opening. Reservation of a pressure welding lead space among wafers is not needed, a silicon substrate is omitted, multi-wafer stacking thickness is reduced while interconnection of multiple pieces of wafers is realized, and therefore, the overall thickness of the device after multi-wafer stacking and packaging is reduced, packaging density is increased, and the requirement of thinning of the semiconductor products is met.

Abstract: A multi-wafer stacking structure is disclosed. In which a first interconnection layer is electrically connected to a second metal layer and a first metal layer via a first opening, a second interconnection layer is electrically connected to the first interconnection layer via a second opening, a third interconnection layer is electrically connected to a third metal layer via a third opening, and the second interconnection layer is electrically connected to the third interconnection layer. It is unnecessary to reserve a bonding lead space between wafers, a silicon substrate is eliminated, and the multi-wafer stacking thickness is reduced while multi-wafer interconnection is realized, so that the overall device thickness is reduced after multi-wafer stacked package. Moreover, there is no need of leads, so as to eliminate design processing of a silicon substrate and a plurality of shared bonding pads on the silicon substrate.

Abstract: A multi-wafer stacking structure and fabrication method are disclosed. In the multi-wafer stacking structure, a first interconnection layer is electrically connected to a second metal layer and a first metal layer via a first opening, a second interconnection layer is electrically connected to the first interconnection layer via a second opening, a third interconnection layer is electrically connected to a third metal layer via a third opening, and the second interconnection layer is electrically connected to the third interconnection layer. It is unnecessary to reserve a bonding lead space between wafers, a silicon substrate is eliminated, and the multi-wafer stacking thickness is reduced while multi-wafer interconnection is realized, so that the overall device thickness is reduced after multi-wafer stacked package. Moreover, there is no need of leads, so as to eliminate design processing of a silicon substrate and a plurality of shared bonding pads on the silicon substrate.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side. The object-side surface of the fourth lens element has a convex portion in a vicinity of a periphery of the fourth lens element. The fifth lens element has negative refractive power. The effective focal length of the optical imaging lens EFL and the sum of all air gaps from the first lens element to the sixth lens element along the optical axis AAG of the optical imaging lens satisfies the relation: 0.9?EFL/AAG?2.6.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side. The object-side surface of the fourth lens element has a convex portion in a vicinity of a periphery of the fourth lens element. The fifth lens element has negative refractive power. The effective focal length of the optical imaging lens EFL and the sum of all air gaps from the first lens element to the sixth lens element along the optical axis AAG of the optical imaging lens satisfies the relation: 0.9?EFL/AAG?2.6.