Abstract: The present disclosure relates to a preparation method of a super absorbent polymer having excellent basic absorbency and liquid permeability at the same time by optimizing the degree of cross-linking of a base resin powder and a surface cross-linked layer, and a super absorbent polymer prepared therefrom.

Abstract: A lens shift backlash elimination device includes a base, a transmission mechanism, and a lens. The transmission mechanism is disposed on the base and includes a first element, a second element, and an elastic element. The second element is mechanically connected to the first element. The elastic element is disposed between the first element and the second element, or abutted against the first element. The lens is mechanically connected to the transmission mechanism. The lens may be displaced relative to the base in a first direction.

Abstract: Disclosed herein is a method for adding an additional chain to a blockchain. The method includes depositing, by a node of the blockchain, an asset corresponding to the additional chain; selecting the node as one of consensus nodes for connecting an additional block to the additional chain based on a share value corresponding to the asset; and performing, by the node, distributed consensus for connecting the additional block. Here, nodes constituting the blockchain include major shareholder nodes for processing transactions.

Abstract: Disclosed is an image sensor including a first tap pixel, a second tap pixel, and an overflow detection circuit suitable for detecting overflow of the first tap pixel based on a first tap pixel signal outputted from the first tap pixel and overflow of the second tap pixel based on a second tap pixel signal outputted from the second tap pixel, and forming a current path from an overflow current source to a ground voltage terminal when a voltage of the first tap pixel signal or a voltage of the second tap pixel signal drops below a predetermined voltage.

Abstract: Methods for tuning effective work functions of gate electrodes in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate dielectric layer over the channel region; and a gate electrode over the gate dielectric layer, the gate electrode including a first work function metal layer over the gate dielectric layer, the first work function metal layer including aluminum (Al); a first work function tuning layer over the first work function metal layer, the first work function tuning layer including aluminum tungsten (AlW); and a fill material over the first work function tuning layer.

Abstract: Disclosed is a processor-implemented data processing method in a neural network. A data processing apparatus includes at least one processor, and at least one memory configured to store instructions to be executed by the processor and a neural network, wherein the processor is configured to, based on the instructions, input an input activation map into a current layer included in the neural network, output an output activation map by performing a convolution operation between the input activation map and a weight quantized with a first representation bit number of the current layer, and output a quantized activation map by quantizing the output activation map with a second representation bit number based on an activation quantization parameter.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A portable air flow apparatus may include a base configured to be seated on a surface, a head comprising a suction inlet through which air is suctioned into the head and a discharge outlet through which the air suctioned in through the suction inlet is discharged, the suction inlet and the discharge outlet being horizontally spaced apart from each other at a right angle with respect to a vertical direction, and a column that connects the head and the base in such a manner that the head is vertically spaced from the base.

Abstract: A lighting device disclosed in an embodiment of the invention includes a substrate; light sources disposed on the substrate; and a resin layer disposed on the substrate and the light sources. a first reflective layer disposed on the resin layer, wherein the resin layer includes an exit surface facing the light sources, and the exit surface of the resin layer includes convex portions facing each of the light sources and recess portions respectively disposed between the plurality of convex portions, concave surfaces disposed in each of the plurality of recess portions may have a curvature, and a radius of curvature of the concave surfaces may increase in one direction.

Abstract: An optical system is provided. The optical system includes a first movable portion, a fixed portion, a first driving assembly, and a first sensing assembly. The first movable portion is used for connecting to an optical assembly having a main axis. The first movable portion is movable relative to the fixed portion. The first driving assembly is used for driving the first movable portion to move relative to the fixed portion. The first sensing assembly is used for sensing the movement of the first movable portion relative to the fixed portion.

Abstract: A method includes forming a dummy gate stack over a semiconductor region, forming epitaxial source/drain regions on opposite sides of the dummy gate stack, removing the dummy gate stack to form a trench, depositing a gate dielectric layer extending into the trench, and depositing a work-function layer over the gate dielectric layer. The work-function layer comprises a seam therein. A silicon-containing layer is deposited to fill the seam. A planarization process is performed to remove excess portions of the silicon-containing layer, the work-function layer, and the gate dielectric layer. Remaining portions of the silicon-containing layer, the work-function layer, and the gate dielectric layer form a gate stack.

Abstract: A sensor package includes a substrate, a light sensor disposed on the substrate, at least one optical filter disposed on the light sensor, and an optical functional layer that is light-permeable, is disposed on the substrate, covers the light sensor and the optical filter, and includes multiple light-scattering particles. The light sensor has a light receiving region, and receives light through the light receiving region. The optical filter covers the light receiving region. When the light passes through the optical filter within an incident angle range and is received by the light receiving region, the light sensor responds to a wavelength range of the light, and a response spectrum is obtained. Within the incident angle range, an absolute value of an offset measured at a crest of a waveform of the response spectrum is less than or equal to 10 nm. An electronic device is also provided.

Abstract: A method for coding image information includes generating prediction information by predicting information on a current coding unit, and determining whether the information on the current coding unit is the same as the prediction information. When the information on the current coding unit is the same as the prediction information, a flag indicating that the information on the current coding unit is the same as the prediction information is coded and transmitted. When the information on the current coding unit is not the same as the prediction information, a flag indicating that the information on the current coding unit is not the same as the prediction information and the information on the current coding unit are coded and transmitted.

Abstract: An image decoding method is disclosed in the present specification. An image decoding method according to the present invention may include: determining a position of a co-located block of a current block within a co-located picture (co-located picture); determining a representative motion vector of the current block by using motion information at the position of the co-located block; and deriving motion information on a sub-block included in the current block by using the representative motion vector.

Abstract: A system includes a mask. The system further includes a pellicle frame attached to the mask. The pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from a first side of the pellicle from to a second side of the pellicle frame. The pellicle frame further includes a flat bottom surface having only a single recess therein, wherein the flat bottom surface is free of an adhesive. The system further includes a gasket within the single recess.

Abstract: Disclosed herein are a decoding method and apparatus and an encoding method and apparatus that perform inter-prediction using a motion vector predictor. For a candidate block in a col picture, a scaled motion vector is generated based on a motion vector of the candidate block. When the scaled motion vector indicates a target block, a motion vector predictor of the target block is generated based on the motion vector of the candidate block. The motion vector predictor is used to derive the motion vector of the target block in a specific inter-prediction mode such as a merge mode and an AMVP mode.

Abstract: A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Abstract: A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A semiconductor device comprises: a first or a second path configured to transmit a first signal which swings between a ground level and a first level, a third path configured to transmit a second signal which swings between the ground level and a second level lower than the first level, a transmitter configured to output received the first signal through the first or second path as the second signal to the third path, and initialize in response to an enable signal, and a receiver configured to output received the second signal through the third path as the first signal through the first or second path, determine level of the second signal through a reference level that is regulated according to a fed-back level of an output terminal thereof, and initialize in response to the enable signal.