Abstract: A substrate treating apparatus for stripping photoresist on a substrate includes a support part for supporting the substrate, a dry-type treating part for stripping the photoresist on the substrate, and a wet-type treating part for stripping the photoresist on the substrate. While the substrate is supported by the support part, the photoresist on the substrate is primarily stripped by means of the dry-type treating part and secondarily stripped by means of the wet-type treating part. The dry-type treating part includes a plasma supply unit configured to supply plasma onto the substrate and a moving unit configured to vary a relative position of the plasma supply unit and the substrate.

Abstract: Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.

Abstract: Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.

Abstract: The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber.

Abstract: A substrate treating apparatus for stripping photoresist on a substrate includes a support part for supporting the substrate, a dry-type treating part for stripping the photoresist on the substrate, and a wet-type treating part for stripping the photoresist on the substrate. While the substrate is supported by the support part, the photoresist on the substrate is primarily stripped by means of the dry-type treating part and secondarily stripped by means of the wet-type treating part. The dry-type treating part includes a plasma supply unit configured to supply plasma onto the substrate and a moving unit configured to vary a relative position of the plasma supply unit and the substrate.

Abstract: The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber.

Abstract: A method for drying a semiconductor substrate includes the steps of clearing the substrate by supplying a liquid into a processing bath of a chamber, injecting first dry gases onto a surface of the supplied liquid, draining the liquid from the processing bath so that the substrate is slowly exposed to the surface of the liquid, and injecting a second dry gas into the chamber and forcibly exhausting gas in the chamber.

Abstract: An apparatus for drying a semiconductor substrate includes a chamber having a processing bath and a cover, a liquid flow system for supplying a liquid flow into the processing bath so as to clean the substrate and for draining a liquid from the processing bath, a gas distributor for spraying a gas for drying the substrate, and decompression means for exhausting air in the chamber.

Abstract: An apparatus for drying a semiconductor substrate includes a chamber having a processing bath and a cover, a liquid flow system for supplying a liquid flow into the processing bath so as to clean the substrate and for draining a liquid from the processing bath, a gas distributor for spraying a gas for drying the substrate, and decompression means for exhausting air in the chamber.

Abstract: A method for drying a semiconductor substrate includes the steps of clearing the substrate by supplying a liquid into a processing bath of a chamber, injecting first dry gases onto a surface of the supplied liquid, draining the liquid from the processing bath so that the substrate is slowly exposed to the surface of the liquid, and injecting a second dry gas into the chamber and forcibly exhausting gas in the chamber.