Abstract: Disclosed herein is a catalyst for an upgrading reaction of biomass pyrolysis oil, a method for preparing the same, and a method for upgrading biomass pyrolysis oil using the same. The catalyst is a composite inorganic oxide, and the composite inorganic oxide includes lanthanum, nickel, titanium, and cerium. When a metal catalyst supported on carbon is used as a catalyst for a first step reaction, by using the catalyst as a catalyst for a second step reaction, the efficiency of the upgrading reaction of bio-oil is increased and a continuous reaction is possible without clogging of a continuous reactor.

Abstract: Disclosed herein are a catalyst for hydrocracking reaction of high molecular weight components in bio-oil, a method for preparing the same and a method for bio-oil upgrading using the same. The catalyst includes a zeolite carrier; and at least one metal selected from the group consisting of nickel (Ni), ruthenium (Ru) and cerium (Ce) supported on the carrier. The catalyst promotes the hydrocracking of high molecular weight compounds contained in the bio-oil, but also inhibits the polymerization reaction of the decomposed product, thereby more effectively enhancing the hydrocracking reaction of the bio-oil.

Abstract: A printed circuit board includes a first substrate portion including a plurality of first insulating layers, a plurality of first wiring layers respectively disposed on the plurality of first insulating layers, and a plurality of first adhesive layers respectively disposed between the plurality of first insulating layers to respectively cover the plurality of first wiring layers; and a second substrate portion disposed on the first substrate portion, and including a plurality of second insulating layers, a plurality of second wiring layers respectively disposed on the plurality of second insulating layers, and a plurality of second adhesive layers respectively disposed between the plurality of second insulating layers to respectively cover the plurality of second wiring layers.

Abstract: A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.

Abstract: A memory system includes a memory device including a main memory and a cache memory that includes a plurality of cache lines for caching data stored in the main memory, wherein each of the cache lines includes cache data, a valid bit indicating whether or not the corresponding cache data is valid, and a loading bit indicating whether or not read data of the main memory is being loaded; and a memory controller suitable for scheduling an operation of the memory device with reference to the valid bits and the loading bits.

Abstract: A memory module includes: a plurality of first memory ranks that belong to a first group; a plurality of second memory ranks that belong to a second group; and a rank mapping circuit suitable for mapping a defective first memory rank among the first memory ranks to a defect-free second memory rank among the second memory ranks.

Abstract: A semiconductor system may include a memory device and a controller. The memory device may include a plurality of decks. Each of the decks may include word lines and bit lines alternately stacked. The controller may control an operation for data of the decks included in the memory device. The controller may include a counting circuit block for counting access numbers of the word lines and the bit lines. The counting circuit block may include a plurality of x-counting blocks corresponding to the word lines that are stacked a plurality of y-counting blocks corresponding to the bit lines that are stacked. The x-counting blocks may count access numbers of selected word lines in accordance with a selection signal of a corresponding deck among the decks. The y-counting block may count access numbers of selected bit lines in accordance with the selection signal of the corresponding deck.

Abstract: A memory system includes a memory device including a main memory and a cache memory that includes a plurality of cache lines for caching data stored in the main memory, wherein each of the cache lines includes cache data, a valid bit indicating whether or not the corresponding cache data is valid, and a loading bit indicating whether or not read data of the main memory is being loaded; and a memory controller suitable for scheduling an operation of the memory device with reference to the valid bits and the loading bits.

Abstract: A semiconductor system may include a memory device and a controller. The memory device may include a plurality of decks. Each of the decks may include word lines and bit lines alternately stacked. The controller may control an operation for data of the decks included in the memory device. The controller may include a counting circuit block for counting access numbers of the word lines and the bit lines. The counting circuit block may include a plurality of x-counting blocks corresponding to the word lines that are stacked a plurality of y-counting blocks corresponding to the bit lines that are stacked. The x-counting blocks may count access numbers of selected word lines in accordance with a selection signal of a corresponding deck among the decks. The y-counting block may count access numbers of selected bit lines in accordance with the selection signal of the corresponding deck.

Abstract: A memory module includes: a plurality of first memory ranks that belong to a first group; a plurality of second memory ranks that belong to a second group; and a rank mapping circuit suitable for mapping a defective first memory rank among the first memory ranks to a defect-free second memory rank among the second memory ranks.