Patents by Inventor Chang Wook Doh

Chang Wook Doh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device fabrication via pulsed plasma
    Patent number: 10580657
    Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: March 3, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Chang Wook Doh, Zhibin Wang, Byungkook Kong, Sang Wook Kim, Sang-Jun Choi
  • DEVICE FABRICATION VIA PULSED PLASMA
    Publication number: 20190371617
    Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.
    Type: Application
    Filed: July 9, 2019
    Publication date: December 5, 2019
    Inventors: Chang Wook DOH, Zhibin WANG, Byungkook KONG, Sang Wook KIM, Sang-Jun CHOI
  • Device fabrication via pulsed plasma
    Patent number: 10347500
    Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: July 9, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Chang Wook Doh, Zhibin Wang, Byungkook Kong, Sang Wook Kim, Sang-Jun Choi