Abstract: A method for performing link management of a memory device in predetermined communications architecture with aid of handshaking phase transition control and associated apparatus are provided. The method may include: utilizing at least one upper layer controller of a transmission interface circuit to turn on a physical layer (PHY) circuit of the transmission interface circuit, for starting establishing a link between a host device and the memory device; before entering a first handshaking phase, utilizing the PHY circuit to receive any first incoming data sent from the host device to determine whether the any first incoming data indicates that the host device is in a corresponding first handshaking phase; and in response to the any first incoming data indicating that the host device is in the corresponding first handshaking phase, utilizing the PHY circuit to send first outgoing data that is equal to first predetermined data to the host device.

Abstract: The present invention relates to a platform door control apparatus based on a double 2-vote-2 architecture, including a security communication and logic processing module, a driver collection module, and a maintenance module, the security communication and logic processing module is separately connected to the driver collection module and the maintenance module, and both the security communication and logic processing module and the driver collection module are devices using the double 2-vote-2 architecture. Compared with the prior art, the present invention has the following advantages of effectively improving linkage efficiency of a signal system and a platform door system, and the like.

Abstract: An embodiment of this application provides a method and apparatus for testing control software, and a computer-readable storage medium to reduce the time consumed in the simulation-based debugging and enhance efficiency. The method may include obtaining test information of a plurality of fault signals; and injecting, based on the test information of the plurality of fault signals, the plurality of fault signals into a simulation environment in sequence to obtain test results of the plurality of fault signals handled by the control software, where the simulation environment may be a simulation environment of a control object of the control software.

Abstract: Disclosed are compounds of Formula I, methods of using the compounds for inhibiting KRAS activity and pharmaceutical compositions comprising such compounds. The compounds are useful in treating, preventing or ameliorating diseases or disorders associated with KRAS activity such as cancer.

Abstract: A welding base includes a welding base body and a first action portion disposed on the welding base body. The first action portion is a ceramic member, and the first action portion and the welding base body are integrally formed. The welding base is disposed in an ultrasonic welding machine.

Abstract: A method for performing link management of a memory device in predetermined communications architecture with aid of handshaking phase transition control and associated apparatus are provided. The method may include: utilizing at least one upper layer controller of a transmission interface circuit to turn on a physical layer (PHY) circuit of the transmission interface circuit, for starting establishing a link between a host device and the memory device; before entering a first handshaking phase, utilizing the PHY circuit to receive any first incoming data sent from the host device to determine whether the any first incoming data indicates that the host device is in a corresponding first handshaking phase; and in response to the any first incoming data indicating that the host device is in the corresponding first handshaking phase, utilizing the PHY circuit to send first outgoing data that is equal to first predetermined data to the host device.

Abstract: Methods and apparatuses for processing materials to enhancing the material's surface strength, improving the material's cyclic and thermal stability of microstructures, and extend the material's fatigue performance. Embodiments include laser shock peening at material temperatures that are moderately elevated (from the material's perspective) above room temperature. Alternate embodiments include laser shock peening at very cold (cryogenic) material temperatures. Still further embodiments include laser shock peening while covering the surface of the material being processed with an active agent that interacts with the laser energy and enhances the pressure exerted on the surface.

Abstract: Various embodiments described herein provide for a method for reduced power consumption by a memory system. A memory system of some embodiments monitors power state change requests received by the memory system from a host system, and determines a pattern of power state change requests received from the host system. Based on the determined pattern, the memory system can decide to activate or deactivate a reduced power consumption mode on the memory system. A reduced power consumption mode can comprise a first set of operation parameters that cause a memory system to operate with lower power consumption than a second set of operation parameters associated with a current operation mode, where the current operation mode is associated with a current power state set or last requested by the host system.

Abstract: A data processing method includes reading a memory device in response to a read command to respectively read multiple portions of predetermined data; respectively writing the portions in a buffer memory to complete data transfers of the portions of the predetermined data; sequentially providing access information corresponding to each portion of the predetermined data in response to completion of the data transfer of the corresponding portion; obtaining the access information of the predetermined data and accordingly generating multiple descriptors in chronological order of obtaining the access information; receiving and buffering the descriptors in a descriptor pool; sequentially selecting a latest descriptor from the descriptor pool according to a tag value and providing the latest descriptor to a direct memory access engine; and reading the buffer memory according to the latest descriptor to obtain at least a portion of the predetermined data by the direct memory access engine.

Abstract: Methods and apparatuses for processing materials to enhancing the material’s surface strength, improving the material’s cyclic and thermal stability of microstructures, and extend the material’s fatigue performance. Embodiments include laser shock peening at material temperatures that are moderately elevated (from the material’s perspective) above room temperature. Alternate embodiments include laser shock peening at very cold (cryogenic) material temperatures. Still further embodiments include laser shock peening while covering the surface of the material being processed with an active agent that interacts with the laser energy and enhances the pressure exerted on the surface.

Abstract: Methods and apparatuses for processing materials to enhancing the material's surface strength, improving the material's cyclic and thermal stability of microstructures, and extend the material's fatigue performance. Embodiments include laser shock peening at material temperatures that are moderately elevated (from the material's perspective) above room temperature. Alternate embodiments include laser shock peening at very cold (cryogenic) material temperatures. Still further embodiments include laser shock peening while covering the surface of the material being processed with an active agent that interacts with the laser energy and enhances the pressure exerted on the surface.

Abstract: A program operation is executed on a memory sub-system. In response to receiving a request to execute a read operation, executing a first program suspend operation to suspend the program operation. In response to a completion of the read operation, a program resume operation is executed to resume execution of the program operation. A delay period is established following execution of the program resume operation during which execution of the program operation is completed. A second program suspend operation is executed following the delay period.

Abstract: The present invention provides a mutant protein of activation-induced cytidine deaminase, wherein hsAID is mutated with the following mutations: T82I, K10E, K34E, E156G, 181*, S38, H130, V152, R174, T100. The present invention also provides a High-efficiency Base Editor, including the mutant protein of activation-induced cytidine deaminase of the present invention and a DNA-specific binding protein, which are linked sequentially via a linking sequence. The present invention also provides a single-base locus-directed editing system, including single-base locus-directed editing proteins and target Hyper Mutation Fragment. Compared with the existing activation-induced cytidine deaminase (AID)-based single-base editing system, the mutant protein inducing system of the present invention has a smaller molecular weight and higher mutation efficiency.

Abstract: A program operation is executed on a memory sub-system. In response to receiving a request to execute a read operation, executing a first program suspend operation to suspend the program operation. In response to a completion of the read operation, a program resume operation is executed to resume execution of the program operation. A delay period is established following execution of the program resume operation during which execution of the program operation is completed. A second program suspend operation is executed following the delay period.

Abstract: A program operation is executed on a memory sub-system. During execution of the program operation, a request to execute a read operation on the memory sub-system is received. In response to receiving the request, a program suspend operation to suspend the program operation is executed. The read operation is executed on the memory sub-system in response to a completion of the program suspend operation. In response to completion of the read operation, a program resume operation is executed. A program suspend delay period is established following execution of the program resume operation during which a subsequent read operation is stored in a queue.

Abstract: A program operation is executed on a memory sub-system. During execution of the program operation, a request to execute a read operation on the memory sub-system is received. In response to receiving the request, a program suspend operation to suspend the program operation is executed. The read operation is executed on the memory sub-system in response to a completion of the program suspend operation. In response to completion of the read operation, a program resume operation is executed. A program suspend delay period is established following execution of the program resume operation during which a subsequent read operation is stored in a queue.

Abstract: An electronic device with heat sink is provided. The heat sink includes a base and fins. One side of the base has a first placement plane and a second placement plane. The electronic device includes a circuit board, a power module and transistors. The power module includes a power body and soldering legs, and the power body is attached to the first placement plane. The transistor has a transistor body and pins, and the transistor body is attached to the second placement plane. The circuit board is disposed at one side of the base formed with the first placement plane, and soldering legs of the power module and pins of the transistor are inserted on the circuit board. Thereby the heat sinks and the space which the circuit board occupied will be reduced for increasing the power density of the heat sink.

Abstract: An electronic device with heat sink is provided. The heat sink includes a base and fins. One side of the base has a first placement plane and a second placement plane. The electronic device includes a circuit board, a power module and transistors. The power module includes a power body and soldering legs, and the power body is attached to the first placement plane. The transistor has a transistor body and pins, and the transistor body is attached to the second placement plane. The circuit board is disposed at one side of the base formed with the first placement plane, and soldering legs of the power module and pins of the transistor are inserted on the circuit board. Thereby the heat sinks and the space which the circuit board occupied will be reduced for increasing the power density of the heat sink.

Abstract: According to one embodiment of the present invention, the method for controlling the pump speed of a redox flow battery for transferring an electrolyte stored in an electrolyte tank to a cell stack comprises the steps of: measuring the input power and/or the output power of the redox flow battery; measuring the charging power and/or the discharging power of the redox flow battery; calculating the power loss of the redox flow battery by using the difference between the input power and the charging power, or the difference between the output power and the discharging power; and adjusting the pump speed according to the power loss.

Abstract: An end seal device of a linear guide includes a main plate and a cladding member. The main plate includes an upper portion, two engaging portions extending downwardly and bent rearwardly from the upper portion, and two lower contact portions extending downwardly from the engaging portions and each having a penetrating hole. The cladding member includes cladding portions respectively attached to major surfaces of the main plate, and two filling portions each filling the penetrating hole to interconnect the cladding portions for firmly covering and protecting the main plate.