Abstract: A bidirectional access portable flash drive includes a casing, which defines therein a receiving space that receives a circuit board mounted therein. The circuit board has a surface on which a memory unit is mounted. The casing has an end to which a double-side pluggable micro-USB connector is mounted. The double-side pluggable micro-USB connector includes a frame and a plate mounted at a predetermined location in the frame. The plate has two surfaces each including a plurality of conductor elements mounted thereon. The plate has two ends at which at least one fixing element is mounted. The memory unit enables effective access and storage of data and the double-side pluggable micro-USB connector provides functions of double-side plugging and protection to achieve an effect of convenient transmission, access, and use of data.

Abstract: A bidirectional access portable flash drive includes a casing, which defines therein a receiving space that receives a circuit board mounted therein. The circuit board has a surface on which a memory unit is mounted. The casing has an end to which a double-side pluggable micro-USB connector is mounted. The double-side pluggable micro-USB connector includes a frame and a plate mounted at a predetermined location in the frame. The plate has two surfaces each including a plurality of conductor elements mounted thereon. The plate has two ends at which at least one fixing element is mounted. The memory unit enables effective access and storage of data and the double-side pluggable micro-USB connector provides functions of double-side plugging and protection to achieve an effect of convenient transmission, access, and use of data.

Abstract: A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Abstract: A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Abstract: A method for checking mask design of an integrated circuit, wherein the integrated circuit includes a plurality of functional elements arranged at different positions, the method includes generating implant layer data of each functional element of the integrated circuit according to characteristics of each functional element; generating mask design data of the integrated circuit according to circuit design of the integrated circuit; generating a block diagram of the integrated circuit according to the mask design data; determining a corresponding position of the functional element in the block diagram according to the implant layer data; and comparing the implant layer data of the functional element with the mask design data at the corresponding position.