Abstract: A method for training a model for face recognition is provided. The method forward trains a training batch of samples to form a face recognition model w(t), and calculates sample weights for the batch. The method obtains a training batch gradient with respect to model weights thereof and updates, using the gradient, the model w(t) to a face recognition model what(t). The method forwards a validation batch of samples to the face recognition model what(t). The method obtains a validation batch gradient, and updates, using the validation batch gradient and what(t), a sample-level importance weight of samples in the training batch to obtain an updated sample-level importance weight. The method obtains a training batch upgraded gradient based on the updated sample-level importance weight of the training batch samples, and updates, using the upgraded gradient, the model w(t) to a trained model w(t+1) corresponding to a next iteration.

Abstract: A wrench includes a main body, a mounting member, a push rod, two push blocks, a first elastic member, a handle, and a drive mechanism. The main body has a support arm, two pivoting portions, a rotation passage, a first receiving hole, a first receiving slot, two second receiving slots, a second receiving hole, and a shank. The push rod has a positioning element. Each of the push blocks has a first received portion, a second received portion, a third mounting portion, a first locking section, a second locking section, a first locking groove, and a second locking groove. The drive mechanism has a driving head, a control rod, and a second elastic member. The driving head has two fitting portions, a third receiving hole, multiple first positioning portions, and an operation end. The control rod has a second positioning portion and a stepped portion.

Abstract: A wrench includes a main body, a mounting member, a push rod, two push blocks, a first elastic member, a handle, and a drive mechanism. The main body has a support arm, two pivoting portions, a rotation passage, a first receiving hole, a first receiving slot, two second receiving slots, a second receiving hole, and a shank. The push rod has a positioning element. Each of the push blocks has a first received portion, a second received portion, a third mounting portion, a first locking section, a second locking section, a first locking groove, and a second locking groove. The drive mechanism has a driving head, a control rod, and a second elastic member. The driving head has two fitting portions, a third receiving hole, multiple first positioning portions, and an operation end. The control rod has a second positioning portion and a stepped portion.

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises a well layer and a barrier layer, wherein the barrier layer has a band gap; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer comprises a band gap which is greater than the band gap of the barrier layer; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; a confinement layer between the first aluminum-containing layer and the active region; and a second aluminum-containing layer between the second semiconductor structure and the first electron blocking layer; wherein both the first alumi

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the fi

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-conta

Abstract: A clamp lamp could clamp a screen having a front surface and a rear surface is provided. The clamp lamp includes a first clip, a second clip and a light-emitting module. When the clamp lamp clamps an edge of the screen, the first and second clips abut on the front surface and the rear surface of the screen respectively. The light-emitting module is connected to the first clip and includes a casing, a light-emitting element and a light-reflecting element. The casing has a light outlet. The light-emitting element is disposed in the casing and configured to emit a light and reflect the light to illuminate the front of the front surface through the light outlet. The light-reflecting element has first and second reflecting surfaces connected to each other. The first reflecting surface has several reflecting points, each having a radius of curvature equal to or greater than 25 mm.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A clamp lamp could clamp a screen having a front surface and a rear surface is provided. The clamp lamp includes a first clip, a second clip and a light-emitting module. When the clamp lamp clamps an edge of the screen, the first and second clips abut on the front surface and the rear surface of the screen respectively. The light-emitting module is connected to the first clip and includes a casing, a light-emitting element and a light-reflecting element. The casing has a light outlet. The light-emitting element is disposed in the casing and configured to emit a light and reflect the light to illuminate the front of the front surface through the light outlet. The light-reflecting element has first and second reflecting surfaces connected to each other. The first reflecting surface has several reflecting points, each having a radius of curvature equal to or greater than 25 mm.

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the fi

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: The present invention discloses an illumination device for an electronic device. The electronic device has a screen and a host, wherein a first lateral side of the screen is pivotally connected to the host having a keyboard surface. The illumination device includes a lampshade, a clamping portion and a light source. The clamping portion is connected to the lampshade and clamps the illumination device on a second lateral side of the screen, wherein the second lateral side is an opposite side of the first lateral side. The light source is disposed in the lampshade and provides an illuminating light, wherein a fixed angle is formed between an optical axis of the illuminating light and a keyboard surface of the host.

Abstract: The present invention discloses an illumination device for an electronic device. The electronic device has a screen and a host, wherein a first lateral side of the screen is pivotally connected to the host having a keyboard surface. The illumination device includes a lampshade, a clamping portion and a light source. The clamping portion is connected to the lampshade and clamps the illumination device on a second lateral side of the screen, wherein the second lateral side is an opposite side of the first lateral side. The light source is disposed in the lampshade and provides an illuminating light, wherein a fixed angle is formed between an optical axis of the illuminating light and a keyboard surface of the host.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A tool holder assembly includes multiple bases and multiple pivots. Each base has a first pivotal portion formed axially thereto, a first passage defined through the first pivotal portion, and a second pivotal portion formed axially thereto. One tool extends through the first passage. One of multiple pivots extends through the two holes of the two extensions of one base and the first passage of another base, such that the bases are pivotable relative to each other.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A lamp having a first illumination module, a second illumination module and a control circuit is provided. The first illumination module has a first light-emitting surface, and the second illumination module has a second light-emitting surface connected to the first light-emitting surface. The control circuit is coupled to the first illumination module and the second illumination module. When the control circuit increases the luminance of the first illumination module and the luminance of the second illumination module, a percentage of increasing the luminance of the first illumination module is less than a percentage of increasing the luminance the second illumination module.

Abstract: According to one embodiment, the gas analyzer system comprises a gas adaptor, a light guide tube and a measure case. The gas adaptor is used for guiding a gas to be detected, wherein the gas is flowed in the gas adaptor along a flow direction. The light guide tube embedded in the gas adaptor, wherein the light guide tube has a light source end and a sensor end, the light guide tube has at least one aperture for the gas entering the light guide tube, and a normal vector of a cross surface defined by the aperture has an angle with respect to the gas inhale direction, wherein the angle is not 180 degrees. The measuring case for accommodating the gas adaptor comprises a light source corresponding to the light source end and a sensor corresponding to the sensor end of the light guide tube.