Abstract: A manufacturing method of a reflective display includes at least the following steps. A reflective display module having a display surface is provided. An adhesive is formed on the display surface of the reflective display module. A plurality of microstructures is formed on the adhesive. A cover plate is provided over the reflective display module, the microstructures, and the adhesive. The cover plate has a first surface, a second surface, and a third surface. The second surface is located between the first surface and the reflective display module, and the third surface is connected to the first surface and the second surface. The second surface of the cover plate is adhered to the adhesive having the microstructures thereon to bond the microstructures onto the second surface of the cover plate. A light source is disposed adjacent to the third surface of the cover plate.

Abstract: A manufacturing method of a reflective display includes at least the following steps. A reflective display module having a display surface is provided. An adhesive is formed on the display surface of the reflective display module. A plurality of microstructures is formed on the adhesive. A cover plate is provided over the reflective display module, the microstructures, and the adhesive. The cover plate has a first surface, a second surface, and a third surface. The second surface is located between the first surface and the reflective display module, and the third surface is connected to the first surface and the second surface. The second surface of the cover plate is adhered to the adhesive having the microstructures thereon to bond the microstructures onto the second surface of the cover plate. A light source is disposed adjacent to the third surface of the cover plate.

Abstract: A display device includes a thin film transistor (TFT) array substrate, an isolation structure, and a front panel laminate (FPL) structure. The TFT array substrate has pixel electrodes. The isolation structure is between the pixel electrodes to form a first resistance between adjacent pixel electrodes. The front panel laminate structure is located on the isolation structure and the pixel electrodes adhesive layer, and has a display medium layer therein.

Abstract: A novel 3D package configuration is provided by stacking a plurality of semiconductor package units or a folded flexible circuit board structure on a lead frame and electrically connected therewith based on the foldable characteristics of the flexible circuit board, and the high temperature resistance of the flexible circuit board which is suitable for insulating layer process, metal layer process, photolithography process, etching and development process, to make conventional semiconductor dies of various functions be bonded on one die and/or two side of a flexible circuit board and electrically connected therewith in advance.

Abstract: A novel 3D package configuration is provided by stacking a folded flexible circuit board structure on a package substrate and electrically connected therewith based on the foldable characteristics of the flexible circuit board, and the high temperature resistance of the flexible circuit board which is suitable for insulating layer process, metal layer process, photolithography process, etching and development process, to make conventional semiconductor dies of various functions be bonded on one die and/or two side of a flexible circuit board and electrically connected therewith in advance.

Abstract: A novel 3D package configuration is provided by stacking a plurality of semiconductor package units or a folded flexible circuit board structure on a lead frame and electrically connected therewith based on the foldable characteristics of the flexible circuit board, and the high temperature resistance of the flexible circuit board which is suitable for insulating layer process, metal layer process, photolithography process, etching and development process, to make conventional semiconductor dies of various functions be bonded on one die and/or two side of a flexible circuit board and electrically connected therewith in advance.

Abstract: A novel 3D package configuration is provided by stacking a folded flexible circuit board structure on a package substrate and electrically connected therewith based on the foldable characteristics of the flexible circuit board, and the high temperature resistance of the flexible circuit board which is suitable for insulating layer process, metal layer process, photolithography process, etching and development process, to make conventional semiconductor dies of various functions be bonded on one die and/or two side of a flexible circuit board and electrically connected therewith in advance.

Abstract: A novel 3D package configuration is provided by stacking a plurality of semiconductor package units or a folded flexible circuit board structure on a package substrate and electrically connected therewith based on the foldable characteristics of the flexible circuit board, and the high temperature resistance of the flexible circuit board which is suitable for insulating layer process, metal layer process, photolithography process, etching and development process, to make conventional semiconductor dies of various functions be bonded on one die and/or two side of a flexible circuit board and electrically connected therewith in advance.

Abstract: This invention provides an apparatus for transferring at least one microdevice and a method for transferring at least one microdevice, which is characterized by utilizing the apparatus for transferring at least one microdevice having a magnetic attracting substrate with at least one magnetic attracting head or magnetic attracting position hole to attract at least one microdevice having at least one magnetic layer disposed on a temporary substrate, and transfer the at least one microdevice to the conductive bonding layer of the at least one microdevice bonding region on a target substrate thereafter.

Abstract: This invention provides an apparatus for transferring at least one microdevice and a method for transferring at least one microdevice, which is characterized by utilizing the apparatus for transferring at least one microdevice having a magnetic attracting substrate with at least one magnetic attracting head or magnetic attracting position hole to attract at least one microdevice having at least one magnetic layer disposed on a temporary substrate, and transfer the at least one microdevice to the conductive bonding layer of the at least one microdevice bonding region on a target substrate thereafter.

Abstract: A display device includes a thin film transistor (TFT) array substrate, an isolation structure, and a front panel laminate (FPL) structure. The TFT array substrate has pixel electrodes. The isolation structure is between the pixel electrodes to form a first resistance between adjacent pixel electrodes. The front panel laminate structure is located on the isolation structure and the pixel electrodes adhesive layer, and has a display medium layer therein.

Abstract: A display device includes a thin film transistor (TFT) array substrate, an isolation structure, and a front panel laminate (FPL) structure. The TFT array substrate has pixel electrodes. The isolation structure is between the pixel electrodes to form a first resistance between adjacent pixel electrodes. The front panel laminate structure is located on the isolation structure and the pixel electrodes adhesive layer, and has a display medium layer therein.

Abstract: A reflective display includes a reflective display module, a cover plate, a light source, a plurality of microstructures, and an adhesive. The reflective display module has a display surface. The cover plate is overlapped with the reflective display module, and the display surface is located between the cover plate and the reflective display module. The cover plate has a first surface, a second surface, and a third surface. The second surface is located between the first surface and the reflective display module. The third surface is connected to the first surface and the second surface. The light source is disposed beside the third surface. The microstructures are located between the cover plate and the reflective display module. The adhesive is located between the microstructures and the reflective display module. The reflective display module is bonded to the second surface via the adhesive.

Abstract: A display device includes a thin film transistor (TFT) array substrate, an isolation structure, and a front panel laminate (FPL) structure. The TFT array substrate has pixel electrodes. The isolation structure is between the pixel electrodes to form a first resistance between adjacent pixel electrodes. The front panel laminate structure is located on the isolation structure and the pixel electrodes adhesive layer, and has a display medium layer therein.

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract: A structure for encapsulating a liquid crystal display device is disclosed. Openings are formed in a second material layer on a first substrate, exposing an underlying first material layer. The openings are substantially distributed over the perimeter of the first substrate. A sealant is placed in the openings, forming a sealant region for attachment of a second substrate to the first substrate. The sealant region is substantially perpendicular to a direction of length of the openings. In addition, the sealant contacts the first material layer and the second material layer through the openings.

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract: A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an ?-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The ?-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The ?-Si layer is used to serve as a discharging path for performing through breakdown to the ?-Si layer so as to eliminate electrostatic charges.

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract: A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an ?-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The ?-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The ?-Si layer is used to serve as a discharging path for performing through breakdown to the ?-Si layer so as to eliminate electrostatic charges.