Abstract: Provided are a filtration device and an air conditioner. The filtration device is applied in the air conditioner, and includes a frame and a filtration structure. The filtration structure is detachably connected to the frame by a first buckle. The frame is configured to be mounted at a housing of the air conditioner. In the filtration device according to the present disclosure, the filtration structure is detachably connected to the frame by the first buckle. After the filtration device is used for a period of time, a user can disassemble the filtration structure for cleaning, maintenance, or replacement.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing the semiconductor structure includes: providing a base, where contact structures arranged at intervals are formed on a surface of the base; forming, on the base, a stacked structure including alternately stacked a support layer and a sacrificial layer, where the stacked structure covers the contact structure; forming an isolation structure in the stacked structure, where the isolation structure runs through the sacrificial layer and part of the support layer along a direction perpendicular to the base, and is connected to the base through part of a remaining support layer, to divide the base into a first region and a second region; and forming a capacitor structure in the second region, where the capacitor structure is correspondingly connected to the contact structure in the second region.

Abstract: The present disclosure provides a manufacturing method of a semiconductor device, including: providing a substrate; forming a film stack structure on the substrate, a top of the film stack structure being a cover layer; forming a mask structure on the cover layer, the mask structure including a mask layer and a pattern transfer layer sequentially stacked from top to bottom; performing a first etching on the mask structure to form first blind holes, the first blind holes running through the mask structure and terminating in the cover layer; and performing a second etching on the mask structure, and removing the mask layer, to flatten a top surface of the pattern transfer layer and trim bottoms of the first blind holes.

Abstract: Embodiments of the present disclosure provide a method for obtaining parameters of a semiconductor structure, a method for obtaining a detection standard and a detection method. The method for obtaining parameters of a semiconductor structure includes: obtaining a semiconductor structure, the semiconductor structure including a substrate and a capacitor support structure on the substrate, the capacitor support structure having a plurality of capacitor holes therein, the capacitor holes penetrating the capacitor support structure in a thickness direction of the capacitor support structure; removing some height of the capacitor support structure; obtaining a test pattern, the test pattern being a pattern exposed at a top of the remaining capacitor support structure; and in the test pattern, obtaining a spacing between the capacitor holes at predetermined positions on the basis of a predetermined direction.

Abstract: Embodiments of the present application provide a process monitoring method and a process monitoring system. The process monitoring method includes: acquiring a semiconductor structure on which an etch process is performed in an etch chamber, and forming a corresponding test structure based on the semiconductor structure; acquiring first theoretical mass of the test structure after the etch process is theoretically performed; placing the test structure in the etch chamber to actually perform the etch process, and acquiring first residual mass of the test structure after the etch process is actually performed; and determining, based on the first theoretical mass and the first residual mass, whether an etch state of the etch process performed in the etch chamber is normal.

Abstract: A solvent spun bamboo fiber with a high wet modulus and a producing method thereof are disclosed. The producing method includes: activating by adding a bamboo pulp into de-ionized water, adjusting the pH value, adding cellulase and adjusting the pH value by adding alkali; squeezing by vacuum dehydration; pre-dissolving by adding an aqueous solution containing 50-88% by mass of N-methylmorpholine-N-oxide; then dissolving by putting the above pre-dissolved mixture into a dissolver, heating, vacuumizing, dehydrating, dissolving, homogenizing and defoaming; spinning by spraying through a spinneret and forming a bamboo fiber by dry-wet spinning; water washing; bleaching; oiling; and drying. The present method is simple to operate, free of industrial pollution, low energy consuming, and highly safe. The bamboo fiber produced by the present method not only keeps the natural physical and chemical properties of bamboo fiber, but also has a high wet modulus without harmful chemical residues.

Abstract: A solvent spun bamboo fiber with a high wet modulus and a producing method thereof are disclosed. The producing method includes: activating by adding a bamboo pulp into de-ionized water, adjusting the pH value, adding cellulase and adjusting the pH value by adding alkali; squeezing by vacuum dehydration; pre-dissolving by adding an aqueous solution containing 50-88% by mass of N-methylmorpholine-N-oxide; then dissolving by putting the above pre-dissolved mixture into a dissolver, heating, vacuumizing, dehydrating, dissolving, homogenizing and defoaming; spinning by spraying through a spinneret and forming a bamboo fiber by dry-wet spinning; water washing; bleaching; oiling; and drying. The present method is simple to operate, free of industrial pollution, low energy consuming, and highly safe. The bamboo fiber produced by the present method not only keeps the natural physical and chemical properties of bamboo fiber, but also has a high wet modulus without harmful chemical residues.