Abstract: Disclosed are a [1,2,4]triazolo[1,5-a]pyridine compound as JAK inhibitor and an application thereof in preparing a drug for treating a disease related to JAK1 or/and TYK2. Specifically, the present invention relates to a compound represented by formula (I), or an isomer or pharmaceutically acceptable salt thereof.

Abstract: The present invention discloses a heat dissipation table made of an alloy material and with a special waterway design, comprising a sample placing table, a graphene heating structure abutted against the sample placing table, a heat dissipation structure abutted against the graphene heating structure and a protective cover for wrapping the heat dissipation structure. The heat dissipation structure comprises a heat dissipation table abutted against the graphene heating structure and a heat dissipation pipeline communicated with the heat dissipation table; a water pipe through groove is formed in the middle part of the heat dissipation table; and the heat dissipation pipeline is embedded into the water pipe through groove. A plurality of waterway annular grooves are formed in the heat dissipation table and communicated with the water pipe through groove. According to the present invention, the demand of diamonds on heat dissipation with high power can be met, and the cost is low.

Abstract: Disclosed is a method for preparing a multi-tab battery. Each of a positive pole piece and a negative pole piece is provided with two or more groups of current collectors, aluminum strips or nickel strips that are used as tabs are arranged on the corresponding current collectors by means of spot welding, so as to form two or more groups of tab leading-out ends; then, the two or more groups of tab leading-out ends are overlapped through a winding manner; tab dual-output or multi-output is used for improving the problem that the consistency of winding tightness of wound battery cores is poor; the contact area between the tabs and the current collectors is effectively improved, the rate discharge capabilities of lithium-ion batteries is improved, and the charging efficiency is greatly improved, thus realizing fast charge.

Abstract: The present invention discloses a heat dissipation table made of an alloy material and with a special waterway design, comprising a sample placing table, a graphene heating structure abutted against the sample placing table, a heat dissipation structure abutted against the graphene heating structure and a protective cover for wrapping the heat dissipation structure. The heat dissipation structure comprises a heat dissipation table abutted against the graphene heating structure and a heat dissipation pipeline communicated with the heat dissipation table; a water pipe through groove is formed in the middle part of the heat dissipation table; and the heat dissipation pipeline is embedded into the water pipe through groove. A plurality of waterway annular grooves are formed in the heat dissipation table and communicated with the water pipe through groove. According to the present invention, the demand of diamonds on heat dissipation with high power can be met, and the cost is low.

Abstract: Methods and systems for determining information for a specimen are provided. One system includes a computer subsystem configured for removing one or more patterns in a specimen image that do not touch a defect detected in the specimen image thereby generating a modified specimen image. The computer subsystem is also configured for generating one or more hash codes for the modified specimen image. In addition, the computer subsystem is configured for assigning the specimen image to one of multiple groups based on a distance between the one or more hash codes and one or more other hash codes generated for a second modified specimen image generated for a second specimen image.

Abstract: A technique for determining a set of surface profiles in a multilayer stack during a fabrication process may be determined using a model of this fabrication process, a geometry of the multilayer stack (such as a pre-defined geometry of the multilayer stack) and a surface profile in the multilayer stack (such as a measured surface profile of the top surface or a bottom surface of the multilayer stack). For example, the model of the fabrication process may be based on a generalized Eikonal equation. In conjunction with deposition rates and/or physical properties of the layers in the multilayer stack, deposition or growth of the multilayer stack may be simulated. Based on the determined set of surface profiles, an acceptance condition of the multilayer stack (such as a multilayer stack in a photo-mask for use in extreme ultra-violet photolithography) may be determined and/or a remedial action may be recommended.

Abstract: A technique for determining a set of surface profiles in a multilayer stack during a fabrication process may be determined using a model of this fabrication process, a geometry of the multilayer stack (such as a pre-defined geometry of the multilayer stack) and a surface profile in the multilayer stack (such as a measured surface profile of the top surface or a bottom surface of the multilayer stack). For example, the model of the fabrication process may be based on a generalized Eikonal equation. In conjunction with deposition rates and/or physical properties of the layers in the multilayer stack, deposition or growth of the multilayer stack may be simulated. Based on the determined set of surface profiles, an acceptance condition of the multilayer stack (such as a multilayer stack in a photo-mask for use in extreme ultra-violet photolithography) may be determined and/or a remedial action may be recommended.

Abstract: A technique for reconstructing an electron-beam (EB) image, which can be a scanning-electron-microscope (SEM) image or an EB-inspection image, is described. This reconstruction technique may involve an inverse electro-optical calculation that corrects for the influence of an electro-optical transfer function associated with an EB system on the EB image. In particular, in the inverse calculation a multi-valued representation of an initial EB image is at an image plane in the model of the electro-optical transfer function and a resulting EB image is at an object plane in the model of the electro-optical transfer function. Furthermore, the model of the electro-optical transfer function may have an analytical derivative and/or may be represented by a closed-form expression.

Abstract: During a calculation technique, at least a portion of a target pattern associated with an integrated-circuit design is modified so that polygons in the target pattern, which represent features in the design, result in acceptable accuracy during a photolithographic process that fabricates the target pattern on a semiconductor die. In particular, a set of polygon parameters associated with the polygons are modified, as needed, so that a cost function that corresponds to a difference between a modified target pattern and an estimated target pattern produced during the photolithographic process meets a termination criterion. A mask pattern that can fabricate the modified target pattern on the semiconductor die is calculated using an inverse optical calculation in which the modified target pattern is at an image plane of an optical path associated with the photolithographic process and the mask pattern is at an object plane of the optical path.

Abstract: During a calculation technique, at least a portion of a target pattern associated with an integrated-circuit design is modified so that polygons in the target pattern, which represent features in the design, result in acceptable accuracy during a photolithographic process that fabricates the target pattern on a semiconductor die. In particular, a set of polygon parameters associated with the polygons are modified, as needed, so that a cost function that corresponds to a difference between a modified target pattern and an estimated target pattern produced during the photolithographic process meets a termination criterion. A mask pattern that can fabricate the modified target pattern on the semiconductor die is calculated using an inverse optical calculation in which the modified target pattern is at an image plane of an optical path associated with the photolithographic process and the mask pattern is at an object plane of the optical path.

Abstract: A technique for reconstructing an electron-beam (EB) image, which can be a scanning-electron-microscope (SEM) image or an EB-inspection image, is described. This reconstruction technique may involve an inverse electro-optical calculation that corrects for the influence of an electro-optical transfer function associated with an EB system on the EB image. In particular, in the inverse calculation a multi-valued representation of an initial EB image is at an image plane in the model of the electro-optical transfer function and a resulting EB image is at an object plane in the model of the electro-optical transfer function. Furthermore, the model of the electro-optical transfer function may have an analytical derivative and/or may be represented by a closed-form expression.