Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

Abstract: A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

Abstract: A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

Abstract: A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

Abstract: A substrate structure includes a substrate body, at least one first mold area and at least one second mold area. The substrate body has a first surface and a second surface opposite to the first surface, and defines at least one first through hole extending through the substrate body. The first mold area is disposed on the first surface of the substrate body. The second mold area is disposed on the second surface of the substrate body, wherein the first mold area is in communication with the second mold area through the first through hole.

Abstract: A substrate structure includes a substrate body, at least one first mold area and at least one second mold area. The substrate body has a first surface and a second surface opposite to the first surface, and defines at least one first through hole extending through the substrate body. The first mold area is disposed on the first surface of the substrate body. The second mold area is disposed on the second surface of the substrate body, wherein the first mold area is in communication with the second mold area through the first through hole.

Abstract: A semiconductor device includes a moveable element over a substrate, wherein the moveable element is moveable relative to the substrate. The semiconductor device further includes a first anchor portion connected to the substrate; and a second anchor portion connected to the substrate on an opposite side of the moveable element from the first anchor portion. The semiconductor device further includes a first connector configured to connect the moveable element to the first anchor portion. The semiconductor device further includes a second connector configured to connect the moveable element to the second anchor portion. The semiconductor device further includes a conductive wire loop on the moveable element; and a connection wire electrically connected to a first end of the conductive wire loop, wherein the connection wire extends across the first connector to the first anchor portion.

Abstract: A semiconductor device includes a moveable element over a substrate, wherein the moveable element is moveable relative to the substrate. The semiconductor device further includes a first anchor portion connected to the substrate; and a second anchor portion connected to the substrate on an opposite side of the moveable element from the first anchor portion. The semiconductor device further includes a first connector configured to connect the moveable element to the first anchor portion. The semiconductor device further includes a second connector configured to connect the moveable element to the second anchor portion. The semiconductor device further includes a conductive wire loop on the moveable element; and a connection wire electrically connected to a first end of the conductive wire loop, wherein the connection wire extends across the first connector to the first anchor portion.

Abstract: A method of fabricating a device includes forming a moveable plate over a substrate. The method further includes forming an energy harvesting coil in the moveable plate. The method further includes forming at least one connector connecting the movable plate with the substrate, wherein a portion of the energy harvesting coil extends along the at least one connector. The method further includes enclosing the movable plate using a capping wafer.

Abstract: A method of fabricating a device includes forming a moveable plate over a substrate. The method further includes forming an energy harvesting coil in the moveable plate. The method further includes forming at least one connector connecting the movable plate with the substrate, wherein a portion of the energy harvesting coil extends along the at least one connector. The method further includes enclosing the movable plate using a capping wafer.

Abstract: A method of fabricating a device includes forming a moveable plate over a substrate, and forming an energy harvesting coil in the moveable plate. The method further includes forming at least one connector connecting the movable plate with the energy harvesting coil, wherein a portion of the energy harvesting coil extends along the at least one connector. The method further includes forming electrodes around the moveable plate, the electrodes adapted to sense motion of the moveable plate.

Abstract: A method of fabricating a device includes forming a moveable plate over a substrate, and forming an energy harvesting coil in the moveable plate. The method further includes forming at least one connector connecting the movable plate with the energy harvesting coil, wherein a portion of the energy harvesting coil extends along the at least one connector. The method further includes forming electrodes around the moveable plate, the electrodes adapted to sense motion of the moveable plate.

Abstract: Provided is a manufacturing method for a micro device. The manufacturing method includes forming a micro-electronic-mechanical system (MEMS) movable structure, forming a plurality of metal loops over the MEMS movable structure, forming a piezoelectric element over the MEMS movable structure, and a magnet disposed over the plurality of metal loops. The method also includes encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element.

Abstract: In some embodiments of the present disclosure, a sensor comprises a substrate, a sensor element and an energy-harvesting device. The sensor element comprises a plate, and the plate is moveable with respect to the substrate. The energy-harvesting device is formed on the plate of the sensor element.

Abstract: The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.

Abstract: In some embodiments of the present disclosure, a sensor comprises a substrate, a sensor element and an energy-harvesting device. The sensor element comprises a plate, and the plate is moveable with respect to the substrate. The energy-harvesting device is formed on the plate of the sensor element.

Abstract: The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.

Abstract: The present invention discloses a high brightness LED structure, wherein a highly-doped n-type AlInP island structure is formed on a portion of the surface of an AlGaInP semiconductor stack structure and functions as a current barrier structure. The island structure is covered by a p-type window layer and positioned below a p-type ohmic electrode. The island structure can make more input current flow to the AlGaInP semiconductor stack structure not shielded by the light-emitting side electrode and thus can optimize the current distribution and promote the light-emitting efficiency.

Abstract: A method of updating parameters of an embedded system through an object push profile (OPP) is used to update parameters of a Bluetooth-enabled device that does not have a keyboard. By using the OPP, a vCard is sent from an initiator to the embedded system, and a resolver extracts contents of fields of the vCard and stores the contents in a storage module. The contents are used to set a device name and a password of the Bluetooth device.