Abstract: A non-volatile memory device includes a bitline area, a string selection transistor, a plurality of memory transistors, a ground selection transistor, and a source area which are serially disposed. The memory transistors are silicon-oxide-nitride-oxide-silicon (SONOS) transistors having a multi-layered charge storage layer. The memory transistors are also depletion mode transistors having a negative threshold voltage. In a method of fabricating the non-volatile memory device, a first conductive type diffusion layer is formed at a predetermined area of a first conductive type substrate. Impurities of a second conductive type are implanted into a predetermined area of a surface of the substrate where the first conductive type diffusion layer is formed, thereby forming an inversely doped area at a surface of the first conductive type diffusion layer. A string selection gate, a plurality of memory gates, and a ground selection gate are formed over a predetermined area of the first conductive type diffusion layer.

Abstract: A non-volatile memory device includes a bitline area, a string selection transistor, a plurality of memory transistors, a ground selection transistor, and a source area which are serially disposed. The memory transistors are silicon-oxide-nitride-oxide-silicon (SONOS) transistors having a multi-layered charge storage layer. The memory transistors are also depletion mode transistors having a negative threshold voltage. In a method of fabricating the non-volatile memory device, a first conductive type diffusion layer is formed at a predetermined area of a first conductive type substrate. Impurities of a second conductive type are implanted into a predetermined area of a surface of the substrate where the first conductive type diffusion layer is formed, thereby forming an inversely doped area at a surface of the first conductive type diffusion layer. A string selection gate, a plurality of memory gates, and a ground selection gate are formed over a predetermined area of the first conductive type diffusion layer.

Abstract: A non-volatile memory device includes a bitline area, a string selection transistor, a plurality of memory transistors, a ground selection transistor, and a source area which are serially disposed. The memory transistors are silicon-oxide-nitride-oxide-silicon (SONOS) transistors having a multi-layered charge storage layer. The memory transistors are also depletion mode transistors having a negative threshold voltage. In a method of fabricating the non-volatile memory device, a first conductive type diffusion layer is formed at a predetermined area of a first conductive type substrate. Impurities of a second conductive type are implanted into a predetermined area of a surface of the substrate where the first conductive type diffusion layer is formed, thereby forming an inversely doped area at a surface of the first conductive type diffusion layer. A string selection gate, a plurality of memory gates, and a ground selection gate are formed over a predetermined area of the first conductive type diffusion layer.

Abstract: A non-volatile memory device includes a bitline area, a string selection transistor, a plurality of memory transistors, a ground selection transistor, and a source area which are serially disposed. The memory transistors are silicon-oxide-nitride-oxide-silicon (SONOS) transistors having a multi-layered charge storage layer. The memory transistors are also depletion mode transistors having a negative threshold voltage. In a method of fabricating the non-volatile memory device, a first conductive type diffusion layer is formed at a predetermined area of a first conductive type substrate. Impurities of a second conductive type are implanted into a predetermined area of a surface of the substrate where the first conductive type diffusion layer is formed, thereby forming an inversely doped area at a surface of the first conductive type diffusion layer. A string selection gate, a plurality of memory gates, and a ground selection gate are formed over a predetermined area of the first conductive type diffusion layer.