Patents by Inventor Chanyong HWANG

Chanyong HWANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for manufacturing large scale single crystal monolayer of hexagonal boron nitride and method for manufacturing the same
    Patent number: 10240253
    Abstract: A method for manufacturing a large-scale single crystal monolayer of hBN including: preparing a single crystal copper substrate of (111) face in a chemical vapor deposition (CVD) apparatus; removing impurities of the single crystal copper substrate of (111) face; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate from which the impurities are removed; and forming a large-scale single crystal monolayer of hBN grown by mutual coherence between the hBN crystal seeds, an apparatus for manufacturing the same, and a substrate for a monolayer UV graphene growth using the same.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: March 26, 2019
    Assignee: Korea Reseach Institute of Standards and Science
    Inventor: ChanYong Hwang
  • Method for controlling magnetic domain wall of magnetic structure and magnetic memory device using same
    Patent number: 9905310
    Abstract: The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: February 27, 2018
    Assignee: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
    Inventors: Kyoungwoong Moon, Chanyong Hwang
  • Method for manufacturing monocrystalline graphene
    Patent number: 9834855
    Abstract: The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.
    Type: Grant
    Filed: December 26, 2014
    Date of Patent: December 5, 2017
    Assignee: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
    Inventor: Chanyong Hwang
  • APPARATUS FOR MANUFACTURING LARGE SCALE SINGLE CRYSTAL MONOLAYER OF HEXAGONAL BORON NITRIDE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20170268123
    Abstract: A method for manufacturing a large-scale single crystal monolayer of hBN including: preparing a single crystal copper substrate of (111) face in a chemical vapor deposition (CVD) apparatus; removing impurities of the single crystal copper substrate of (111) face; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate from which the impurities are removed; and forming a large-scale single crystal monolayer of hBN grown by mutual coherence between the hBN crystal seeds, an apparatus for manufacturing the same, and a substrate for a monolayer UV graphene growth using the same.
    Type: Application
    Filed: October 20, 2016
    Publication date: September 21, 2017
    Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
    Inventor: ChanYong HWANG
  • METHOD FOR CONTROLLING MAGNETIC DOMAIN WALL OF MAGNETIC STRUCTURE AND MAGNETIC MEMORY DEVICE USING SAME
    Publication number: 20170162274
    Abstract: The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same.
    Type: Application
    Filed: January 16, 2015
    Publication date: June 8, 2017
    Inventors: Kyoungwoong MOON, Chanyong HWANG
  • METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE
    Publication number: 20170009371
    Abstract: The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.
    Type: Application
    Filed: December 26, 2014
    Publication date: January 12, 2017
    Inventor: Chanyong HWANG