Abstract: A system comprising a card device for effectuating a transaction when presented to a transaction terminal, the card device including a memory and a first energy source, the source for powering the memory for a period of time, and a card cradle carrier for storing the card device when the card device is not engaged in the transaction. The card cradle carrier is formed of a substantially rigid material and forms at least a portion of a personal effect. In accordance with the teachings of the present invention, the card cradle carrier includes a second energy source for recharging the first energy source when the card device is received for storage by the card cradle carrier.

Abstract: A method of forming a plurality of interconnected metal oxide semiconductor field effect transistors on P-type semiconductor substrate (10). A layer of oxide (14) is formed on the substrate (10) and then a polysilicon layer (16) is formed on top of the oxide layer (14). A layer of silicon nitride (18) is deposited on top of the polysilicon layer (16). The silicon nitride layer (18), polysilicon layer (16) and oxide layer (14) are selectively etched to form a conductor pattern. The conductor pattern defines a gate electrode and a plurality of interconnecting lines (42) that interconnect transistors to each other and to the peripheral circuits that drive the transistors. The source and drain regions (26 and 28) are ion implanted with arsenic ions. The exposed sidewalls of the polysilicon layer (16) are oxidized lateral and subjacent to the silicon nitride layer (18).