Abstract: A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A method for bonding inner leads of lead frame to substrate includes the steps of: (a) providing a substrate, the substrate having a plurality of connection pads formed on the electrical bonding surface of the substrate; (b) providing a lead frame with a dam tape adhered on of the inner leads of the lead frame; (c) thermally compressing the inner leads of lead frame onto the substrate, wherein a solder material is formed between the inner end and the corresponding connection pad of the substrate and the solder material is limited by the dam tape during inner lead bonding, so that there is stable electrical and mechanical connection between inner leads and the substrate.

Abstract: A semiconductor package is disclosed, such as QFN, SON. The semiconductor package includes a die, a package body for protection of a die, and a plurality of leads. A metal pad formed by some partial downside surface of each lead is located on a downside surface of the package body with coplanarity. Each lead has a cutting surface exposed on a corresponding lateral surface of the package body. The cutting surface has an interval with the plane of forming the metal pads by means of selectively self-etching the leads or stamping to bend the leads in order to avoid forming a cutting sharp edge in the brim of the metal pad after cutting.