Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A packaging carton box for flower and plant transportation is disclosed. The flower and plant packaging carton box comprises a main body having a bottom surface, wherein the bottom surface comprises at least a first pore hole. While plural of the packaging carton boxes are piled up, an air flow channel is formed by the first pore holes at the bottom surfaces of the main bodies, so as to cooperate with the transport carrier having a cold air flow blowing from bottom to top. Therefore, the cold air flow may enter the interior of each of the main body of the packaging carton box through the first pore hole and the air flow channel for adjusting the interior temperature and humidity of the packaging carton box.