Abstract: The present disclosure provides compounds represented by Formula I, or an enantiomer or diastereomer, or a pharmaceutically acceptable salt thereof, wherein X, Y, Z, L, Ar, R1, R2, R3 R4, R5, R6, m, and p are defined herein. Compounds of Formula I are BCR-ABL inhibitors. BCR-ABL inhibitors are useful for the treatment of cancer and other diseases.

Abstract: A construction method of mine intelligent management and control platform based on a geological survey guarantee system includes: constructing a unified data center and a multi-dimensional (x, y), (x, y, t), (x, y, z) and (x, y, z, t) geological survey guarantee system platform, and realizing dynamic processing and multi-dimensional visual exhibition of geological survey data, to complete construction of the basic mine intelligent management and control platform and a visual operation interface; by using the multi-dimensional geological survey guarantee system as a base, constructing and accessing scenes and data of different types of safe-production systems, to realize visualized patrolling inspection, digital twinning and remote industrial control; and realizing deep fusion, decision-making analysis and visual cooperative management and control of multi-source geological survey data and data of safe production and operation, to form the mine intelligent management and control platform.

Abstract: A seal structure includes a ring-shaped seal member. The seal member is disposed in a seal groove. The case includes a low-pressure lateral face in a cross section of the seal structure, the cross section being taken along an imaginary plane in parallel with a shaft axial direction of the shaft and passing through a center line of the shaft. The seal member includes a first protruding portion. The first protruding portion protrudes from a main portion having a bottom face in contact with the low-pressure lateral face, and has a shape such that the first protruding portion extends toward the shaft as the first protruding portion extends toward the low-pressure side. The first protruding portion includes a tip. The first protruding portion includes a contact region in contact with the shaft. The tip is closer to the low-pressure side than the contact region is.

Abstract: A seal member is disposed in a seal groove at a sliding gap between a shaft and a case. The seal member includes an outer periphery, a curved inner periphery, a mounting face, and an upper face. The mounting face is recessed toward the upper face. The upper face is recessed toward the mounting face. The relation of 0.755?h/H?0.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: A seal structure includes a ring-shaped seal member. The seal member is disposed in a seal groove. The case includes a low-pressure lateral face in a cross section of the seal structure, the cross section being taken along an imaginary plane in parallel with a shaft axial direction of the shaft and passing through a center line of the shaft. The seal member includes a first protruding portion. The first protruding portion protrudes from a main portion having a bottom face in contact with the low-pressure lateral face, and has a shape such that the first protruding portion extends toward the shaft as the first protruding portion extends toward the low-pressure side. The first protruding portion includes a tip. The first protruding portion includes a contact region in contact with the shaft. The tip is closer to the low-pressure side than the contact region is.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: A product for quickly cutting large quantities of meat into similarly sized pieces includes a cutting board, a hollow enclosure, and a top inserting press. The cutting board serves as a bottom surface for the hollow enclosure. The hollow enclosure is filled with food that needs to be cut, like raw chicken, after which the top inserting press is used to press the food down. The hollow enclosure has slits cut into each wall, with paired walls having matching slits. These slits run from top to bottom and allow a knife to cut through food held in the hollow enclosure. The slits are equally spaced from each other, resulting in food that is cut into equal pieces. The product is designed to allow a person to quickly cut large amounts of meat. The product is also intended to be easy to set up, use, and sanitize.

Abstract: A product for quickly cutting large quantities of meat into similarly sized pieces includes a cutting board, a hollow enclosure, and a top inserting press. The cutting board serves as a bottom surface for the hollow enclosure. The hollow enclosure is filled with food that needs to be cut, like raw chicken, after which the top inserting press is used to press the food down. The hollow enclosure has slits cut into each wall, with paired walls having matching slits. These slits run from top to bottom and allow a knife to cut through food held in the hollow enclosure. The slits are equally spaced from each other, resulting in food that is cut into equal pieces. The product is designed to allow a person to quickly cut large amounts of meat. The product is also intended to be easy to set up, use, and sanitize.