Abstract: A microelectronic package includes a packaging substrate having a chip mounting surface; a chip mounted on the chip mounting surface of the packaging substrate with the chip's active surface facing down to the chip mounting surface; a plurality of input/output (I/O) pads distributed on the active surface of the chip; and a discrete passive element mounted on the active surface of the chip. The discrete passive element may be a decoupling capacitor, a resistor, or an inductor.

Abstract: The invention provides an integrated circuit device. The integrated circuit device includes a semiconductor substrate. An isolation structure is positioned in the semiconductor substrate. A first electrode and a second electrode are positioned on the semiconductor substrate and coupled to different voltage supplies. The first electrode laterally or parallelly overlaps the second electrode. The first electrode and the second electrode vertically overlap the isolation structure. As a result, leakage current is mitigated or eliminated so that the reliability and performance of the integrated circuit device are improved.

Abstract: An embodiment device package includes a discrete device, a first connector on a bottom surface of the discrete device, and a second connector on a top surface of the discrete device. The first connector bonds the discrete device to a first package component, and the second connector bonds the discrete device to a second package component.

Abstract: A link device with a large density routing is attached to a package in order to provide a high-density interconnect pathway to interconnect semiconductor devices. In an embodiment the package is an integrated fan out package. The link device may be bonded on either side of the package, and the package may optionally comprise through package vias. The link device may also be an integrated passive device that includes resistors, inductor, and capacitor components.

Abstract: An embodiment device package includes a discrete device, a first connector on a bottom surface of the discrete device, and a second connector on a top surface of the discrete device. The first connector bonds the discrete device to a first package component, and the second connector bonds the discrete device to a second package component.

Abstract: A link device with a large density routing is attached to a package in order to provide a high-density interconnect pathway to interconnect semiconductor devices. In an embodiment the package is an integrated fan out package. The link device may be bonded on either side of the package, and the package may optionally comprise through package vias. The link device may also be an integrated passive device that includes resistors, inductor, and capacitor components.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first hybrid bonded device including a first device and a second device hybrid bonded face-to-face to the first device. The first device includes a first substrate having first bonding connectors and a first bonding layer disposed on a surface thereof. A second hybrid bonded device is bonded back-to-back to the first hybrid bonded device. The second hybrid bonded device includes a third device and a fourth device hybrid bonded face-to-face to the third device. The third device includes a second substrate having second bonding connectors and a second bonding layer disposed on a surface. The second bonding connectors of the third device are coupled to the first bonding connectors of the first device, and the second bonding layer of the third device is coupled to the first bonding layer of the first device.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first hybrid bonded device including a first device and a second device hybrid bonded face-to-face to the first device. The first device includes a first substrate having first bonding connectors and a first bonding layer disposed on a surface thereof. A second hybrid bonded device is bonded back-to-back to the first hybrid bonded device. The second hybrid bonded device includes a third device and a fourth device hybrid bonded face-to-face to the third device. The third device includes a second substrate having second bonding connectors and a second bonding layer disposed on a surface. The second bonding connectors of the third device are coupled to the first bonding connectors of the first device, and the second bonding layer of the third device is coupled to the first bonding layer of the first device.

Abstract: A system comprises a processor-implemented tool configured to generate a layout of an integrated circuit (IC) die. At least one non-transitory machine readable storage medium includes a first portion encoded with a first gate-level description of first and second circuit patterns to be formed on first and second integrated circuit (IC) dies, respectively, and a second portion encoded with a second gate level description of the first and second circuit patterns received from the processor implemented tool. The second gate level description includes power and ground ports, and the first gate level description does not include power and ground ports. A processor-implemented first verification module is provided for comparing the first and second gate level descriptions and outputting a verified second gate-level description of the first and second circuit patterns.

Abstract: A method for timing analysis includes using the processor to determine an impedance profile of a coupling between at least a first inter-level via (ILV) and a second ILV or a device, as a function of at least different frequency values. The impedance profile includes a plurality of impedance values corresponding to respective frequency values. An effective capacitance value corresponding to each respective impedance value is determined. At least one table is provided with respective impedance values and respective effective capacitance values for each respective frequency value. An RC extraction of a design layout of an ILV circuit is conducted using the populated table and based on determined effective capacitance values.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: A method for timing analysis includes using the processor to determine an impedance profile of a coupling between at least a first inter-level via (ILV) and a a second ILV or a device, as a function of at least different frequency values. The impedance profile includes a plurality of impedance values corresponding to respective frequency values. An effective capacitance value corresponding to each respective impedance value is determined. At least one table is provided with respective impedance values and respective effective capacitance values for each respective frequency value. An RC extraction of a design layout of an ILV circuit is conducted using the populated table and based on determined effective capacitance values.

Abstract: A system comprises a processor-implemented tool configured to generate a layout of an integrated circuit (IC) die. At least one non-transitory machine readable storage medium includes a first portion encoded with a first gate-level description of first and second circuit patterns to be formed on first and second integrated circuit (IC) dies, respectively, and a second portion encoded with a second gate level description of the first and second circuit patterns received from the processor implemented tool. The second gate level description includes power and ground ports, and the first gate level description does not include power and ground ports. A processor-implemented first verification module is provided for comparing the first and second gate level descriptions and outputting a verified second gate-level description of the first and second circuit patterns.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: A method for determining an effective capacitance to facilitate a timing analysis using a processor generally comprises generating a model that is representative of a coupling between at least two TSVs. An impedance profile between the two TSVs as a function of at least one parameter is determined by using the model, wherein the impedance profile includes a plurality of impedance values corresponding to respective values of the parameter. An effective capacitance value corresponding to each respective impedance value is determined. An RC extraction is conducted of a design layout of a TSV circuit based on each determined effective capacitance value to generate an RC network.

Abstract: A method comprises analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium. A substrate mesh model of the semiconductor interposer is generated, having a plurality of substrate mesh nodes. Each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements. A set of inputs to a timing analysis tool is formed. The plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model. The set of inputs is stored in a tangible machine readable storage medium.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: Some methods provide an electronic design file, which includes an integrated circuit (IC) component that is operably coupled to a package component. The IC component and package component collectively form a resistor inductor capacitor (RLC) resonant circuit. The method also provides a damping component in the electronic design file. This damping component is configured to reduce a pre-resonant time during which energy exchanged in the RLC resonant circuit approaches a steady-state, and thereby speeds simulation time.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A system includes an automated place and route tool to generate a layout of an integrated circuit (IC) die based on a gate level circuit description. A machine readable persistent storage medium includes a first portion encoded with a first gate-level description of first and second circuit patterns to be formed on first and second IC dies, respectively, and a second portion encoded with a second gate level description of the plurality of circuit patterns received from the tool. The second gate level description includes power and ground ports, and the first gate level description does not include power and ground ports. A processor-implemented verification module is provided for comparing the first and second gate level descriptions and outputting an error report if the second gate level description has an error. The verification module outputs a verified second gate-level description of the first and second circuit patterns.