Abstract: Bridged compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. wherein R2, R3 R4, R5 and R6 are defined herein.

Abstract: Methods, systems, and devices for improved implicit ordered command handling are described. For instance, a memory device may receive, from a host device, a first command and a second command. The memory device may determine whether a first memory operation associated with the first command and a second memory operation associated with the second command are to be performed in an order relative to each other based on a first time when the first command is received relative to a second time when the second command is received. The memory device may select whether to perform a first memory access procedure or a second memory access procedure based on whether the first memory operation and the second memory operation are a same type of memory operation and on whether the first memory operation and the second memory operation are to be performed in the order relative to each other.

Abstract: Described herein are apparatuses (e.g., systems and devices) and methods of delivering nanosecond pulsed electrical fields (nsPEF). In particular, these apparatuses and methods may provide enhanced safety and robust operation over even very short (e.g., nanosecond and sub-nanosecond pulses) and high voltage pulsing; these benefits may be accomplished by multi-functional isolation of various subsystems and components of the apparatus, even including the low-voltage, control and command portions of the apparatus with extremely low capacitance, high voltage isolation.

Abstract: An energy storage system and a fire protection method for the energy storage system are disclosed. The energy storage system includes: a storage assembly, configured to store a battery cell; and a tire prevention assembly, including a plate and a thermometric optical fiber disposed on the plate, where the plate is disposed opposite to the storage assembly, and the thermometric optical fiber is configured to sense a temperature of the battery cell so as to send a fire signal when the temperature of the battery cell reaches a threshold. The thermometric optical fiber is disposed on a side of the plate and extends along a curved path, the side being oriented toward the storage assembly.

Abstract: The present invention relates to novel, selective, radiolabelled compound having monoacylglycerol lipase (MGL) affinity which are useful for imaging and quantifying MGL receptor expression, distribution and enzyme occupancy in tissues, using positron-emission tomography (PET). The invention is also directed to compositions comprising such compounds, the use of such compounds and compositions for imaging a tissue, cells or a host, in vitro or in vivo and to precursors of said compounds.

Abstract: Described herein are apparatuses (e.g., systems and devices) and methods of delivering nanosecond pulsed electrical fields (nsPEF). In particular, these apparatuses and methods may provide enhanced safety and robust operation over even very short (e.g., nanosecond and sub-nanosecond pulses) and high voltage pulsing; these benefits may be accomplished by multi-functional isolation of various subsystems and components of the apparatus, even including the low-voltage, control and command portions of the apparatus with extremely low capacitance, high voltage isolation.

Abstract: The present invention relates to novel, selective, radiolabelled compound having monoacylglycerol lipase (MGL) affinity which are useful for imaging and quantifying MGL receptor expression, distribution and enzyme occupancy in tissues, using positron-emission tomography (PET). The invention is also directed to compositions comprising such compounds, the use of such compounds and compositions for imaging a tissue, cells or a host, in vitro or in vivo and to precursors of said compounds.

Abstract: Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

Abstract: Fused compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. Wherein R1, R2, R2a, R3, R3a, R4, and R4a are defined herein.

Abstract: Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

Abstract: Bridged compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. wherein R2, R3 R4, R5 and R6 are defined herein.

Abstract: Fused compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. Wherein R1, R2, R2a, R3, R3a, R4, and R4a are defined herein.

Abstract: Bridged compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. wherein R2, R3 R4, R5 and R6 are defined herein.

Abstract: Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

Abstract: Fused compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. Wherein R1, R2, R2a, R3, R3a, R4, and R4a are defined herein.

Abstract: Bridged compounds of Formula (I) and Formula (II), pharmaceutical compositions containing them, methods of making them, and methods of using them including methods for treating disease states, disorders, and conditions associated with MGL modulation, such as those associated with pain, psychiatric disorders, neurological disorders (including, but not limited to major depressive disorder, treatment resistant depression, anxious depression, bipolar disorder), cancers and eye conditions. wherein R2, R3 R4, R5 and R6 are defined herein.

Abstract: Described herein are apparatuses and methods for applying high voltage, high current, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., while preventing damage from load arcing. Some of the apparatuses and methods described herein may limit the load and pulsed power source current in case of load arcing significantly by using a transmission line (e.g., coaxial cable, twisted pair or parallel pair cables) between the pulsed power source and the load having a length configured to achieve this goal.

Abstract: Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

Abstract: Described herein are apparatuses (e.g., systems and devices) and methods of delivering nanosecond pulsed electrical fields (nsPEF). In particular, these apparatuses and methods may provide enhanced safety and robust operation over even very short (e.g., nanosecond and sub-nanosecond pulses) and high voltage pulsing; these benefits may be accomplished by multi-functional isolation of various subsystems and components of the apparatus, even including the low-voltage, control and command portions of the apparatus with extremely low capacitance, high voltage isolation.

Abstract: Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.