Abstract: A computer-implemented method, according to one embodiment, is for managing block calibration operations. The computer-implemented method includes: determining a type of calibration procedure to apply to a block of memory, and assigning the calibration type to the block. A calibration level to assign to the block is also determined, and thereafter the calibration level is assigned to the block. Moreover, the block is assigned to one of two or more calibration queues based on the calibration type and calibration level associated with the block. A different priority level is assigned to each of the calibration queues, and the priority levels determine an order in which blocks assigned to the calibration queues are calibrated.

Abstract: A computer-implemented method, according to one embodiment, includes: maintaining a block switching metric for each block of memory in the storage system. A determination is made as to whether a first block in a first pool should be transferred to a second pool according to a block switching metric which corresponds to the first block. In response to determining that the first block in the first pool should be transferred to the second pool according to the block switching metric which corresponds to the first block, the first block is erased. The first block is then transferred from the first pool to a second RTU queue which corresponds to the second pool. A second block in the second pool is also erased and transferred from the second pool to a first RTU queue which corresponds to the first pool.

Abstract: A computer-implemented method, according to one approach, includes: determining a current read heat value of each logical page which corresponds to write requests that have accumulated in a destage buffer. Each of the write requests is assigned to a respective write queue based on the current read heat value of each logical page which corresponds to the write requests. Moreover, each of the write queues correspond to a different page stripe which includes physical pages, the physical pages included in each of the respective page stripes being of a same type. Other systems, methods, and computer program products are described in additional approaches.

Abstract: Aspects of the present invention disclose a method, computer program product, and system for controlling operation of an array of non-volatile memory cells comprising cells which are selectively configurable for single-bit and multibit storage. The method includes a memory controller selectively configuring the array for operation in a hybrid mode, in which the array comprises both cells configured for single-bit storage and cells configured for multibit storage, and a multibit mode in which all cells in the array are configured for multibit storage. The method further includes the memory controller dynamically switching between the hybrid and multibit mode configurations of the array corresponding to array capacity-usage traversing a defined threshold level associated with enhance endurance of the array.

Abstract: A computer-implemented method, according to one embodiment, is for managing block calibration operations. The computer-implemented method includes: determining a type of calibration procedure to apply to a block of memory, and assigning the calibration type to the block. A calibration level to assign to the block is also determined, and thereafter the calibration level is assigned to the block. Moreover, the block is assigned to one of two or more calibration queues based on the calibration type and calibration level associated with the block. A different priority level is assigned to each of the calibration queues, and the priority levels determine an order in which blocks assigned to the calibration queues are calibrated.

Abstract: A computer-implemented method, according to one approach, is for calibrating read voltages associated with a block of memory having more than one word-line therein. The computer-implemented method includes: for each of the word-lines in the block: calculating an absolute shift value for a reference read voltage associated with the given word-line. A relative shift value is also determined for each of the remaining read voltages associated with the given word-line, and the relative shift values are determined with respect to the reference read voltage. Moreover, each of the read voltages associated with the given word-line are adjusted using the absolute shift value and each of the respective relative shift values.

Abstract: A computer-implemented method, according to one approach, includes: using a first calibration scheme to calibrate the given page in the block by calculating a first number of independent read voltage offset values for the given page. An attempt is made to read the calibrated given page, and in response to determining that an error correction code failure occurred when attempting to read the calibrated given page, a second calibration scheme is used to recalibrate the given page in the block. The second calibration scheme is configured to calculate a second number of independent read voltage offset values for the given page. An attempt to read the recalibrated given page is also made. In response to determining that an error correction code failure did occur when attempting to read the recalibrated given page, one or more instructions to relocate data stored in the given page are sent.

Abstract: A memory system and method for storing data in one or more storage chips is disclosed. The memory system includes one or more storage dies included in each storage chip and a controller. Each of the plurality of storage dies further comprises one or more media replacement unit (MRU) groups. The controller includes a translation module, the translation module further comprising: a chip select table (CST) configured to identify one or more valid storage chips during translation for performing a read/write operation, and a media repair table (MRT) corresponding to each of storage chips, each MRT configured to identify one or more storage dies during translation for performing a read/write operation.

Abstract: A computer-implemented method, according to one embodiment, includes: maintaining a first subset of the plurality of blocks in a first pool, where the blocks maintained in the first pool are configured in SLC mode. A second subset of the plurality of blocks is maintained in a second pool, where the blocks maintained in the second pool are configured in multi-bit-per-cell mode. A current I/O rate for the memory is identified during runtime, and a determination is made as to whether the current I/O rate is outside a first range. In response to determining that the current I/O rate is not outside the first range, the blocks maintained in the first pool are used to satisfy incoming host writes. Moreover, in response to determining that the current I/O rate is outside the first range, the blocks maintained in the second pool are used to satisfy incoming host writes.

Abstract: A computer-implemented method, according to one embodiment, is for calibrating read voltages for a block of memory. The computer-implemented method includes: determining a calibration read mode of the block, and using the calibration read mode to determine whether pages in the block should be read using full page read operations. In response to determining that the pages in the block should not be read using full page read operations, a current value of a partial page read indicator for the block is determined. The block is further calibrated by reading only a portion of each page in the block, where the current value of the partial page read indicator determines which portion of each respective page in the block is read. Moreover, the current value of the partial page read indicator is incremented.

Abstract: A memory system and method for storing data in one or more storage chips includes: one or more memory cards each having a plurality of storage chips, and each chip having a plurality of dies having a plurality of memory cells; a memory controller comprising a translation module, the translation module further comprising: a logical to virtual translation table (LVT) having a plurality of entries, each entry in the LVT configured to map a logical address to a virtual block address (VBA), where the VBA corresponds to a group of the memory cells on the one or more memory cards, wherein each entry in the LVT further includes a write wear level count to track the number of writing operations to the VBA, and a read wear level count to track the number of read operations for the VBA mapped to that LVT entry.

Abstract: A memory controller for recovering data due to transient effects of nonvolatile memory is provided. A memory controller receives a read request for a page stored in the nonvolatile memory. The memory controller issues a first read command. The memory controller records a time stamp for the first read command. In response to a failure during the first read command, the memory controller waits for a delay after the recorded time stamp and the memory controller issues a second read command to the page, wherein the second read command applies a read voltage offset that is dependent on the delay between the first read command and the second read command and at least one other parameter.

Abstract: A computer-implemented method, according to one approach, includes: receiving write requests, accumulating the write requests in a destage buffer, and determining a current read heat value of each logical page which corresponds to the write requests. Each of the write requests is assigned to a respective write queue based on the current read heat value of each logical page which corresponds to the write requests. Moreover, each of the write queues correspond to a different page stripe which includes physical pages, the physical pages included in each of the respective page stripes being of a same type. Furthermore, data in the write requests is destaged from the write queues to their respective page stripes. Other systems, methods, and computer program products are described in additional approaches.

Abstract: A computer-implemented method, according to one approach, is for calibrating read voltages for a block of memory. The computer-implemented method includes: determining a current operating state of a block which includes more than one word-line therein, and where more than one read voltage is associated with each of the word-lines. Moreover, for each of the word-lines in the block: one of the read voltages associated with the given word-line is selected as a reference read voltage, and an absolute shift value is calculated for the reference read voltage. A relative shift value is determined for each of the remaining read voltages associated with the given word-line, where the relative shift values are determined with respect to the reference read voltage. Furthermore, each of the read voltages associated with the given word-line are adjusted using the absolute shift value and each of the respective relative shift values.

Abstract: A computer-implemented method, according to one embodiment, includes: determining a current operating state of a block of memory. The block includes more than one type of page therein, and at least one read voltage is associated with each of the page types. The current operating state of the block is further used to produce a hybrid calibration scheme for the block which identifies a first subset of the read voltages, and a second subset of the read voltages. The read voltages in the second subset are further organized in one or more groupings. A unique read voltage offset value is calculated for each of the read voltages in the first subset, and a common read voltage offset value is also calculated for each grouping of read voltages in the second subset.

Abstract: A memory system and method for storing data in one or more storage chips is disclosed. The memory system includes one or more storage dies included in each storage chip and a controller. Each of the plurality of storage dies further comprises one or more media replacement unit (MRU) groups. The controller includes a translation module, the translation module further comprising: a chip select table (CST) configured to identify one or more valid storage chips during translation for performing a read/write operation, and a media repair table (MRT) corresponding to each of storage chips, each MRT configured to identify one or more storage dies during translation for performing a read/write operation.

Abstract: A computer-implemented method, according to one embodiment, includes: receiving a write request at a storage system which includes more than one storage device, determining a storage location for data included in the write request, and determining a storage location for parity information corresponding to the data included in the write request. A first copy of the data included in the write request is sent to a first storage device which corresponds to the storage location for the data included in the write request. Moreover, a second copy of the data included in the write request is sent to a second storage device which corresponds to the storage location for the parity information. One or more instructions to compute the parity information via a decentralized communication link with the remaining storage devices are sent to the second storage device. The first storage device is different than the second storage device.

Abstract: A computer-implemented method, according to one embodiment, is for maintaining heat information of data while in a cache. The computer-implemented method includes: transferring data from non-volatile memory to the cache, such that the data is stored in a first page in the cache. Previous read and/or write heat information associated with the data is maintained by preserving one or more bits in a hash table which correspond to the data in the first page. Moreover, the data is destaged from the first page in the cache to the non-volatile memory, and the one or more bits in the hash table which correspond to the data are updated to reflect current read and/or write heat information associated with the data.

Abstract: A computer-implemented method, according to one approach, includes: receiving write requests, accumulating the write requests in a destage buffer, and determining a current read heat value of each logical page which corresponds to the write requests. Each of the write requests is assigned to a respective write queue based on the current read heat value of each logical page which corresponds to the write requests. Moreover, each of the write queues correspond to a different page stripe which includes physical pages, the physical pages included in each of the respective page stripes being of a same type. Furthermore, data in the write requests is destaged from the write queues to their respective page stripes. Other systems, methods, and computer program products are described in additional approaches.

Abstract: A computer-implemented method, according to one embodiment, includes: determining whether a number of blocks included in a first ready-to-use (RTU) queue is in a first range of the first RTU queue. In response to determining that the number of blocks included in the first RTU queue is in the first range, a determination is made as to whether a number of blocks included in a second RTU queue is in a second range of the second RTU queue. Moreover, in response to determining that the number of blocks included in the second RTU queue is not in the second range, valid data is relocated from one of the blocks in a first pool which corresponds to the first RTU queue. The block in the first pool is erased, and transferred from the first pool to the second RTU queue which corresponds to a second pool.