Abstract: A dry glass-based fit, and methods of making a dry glass fit are disclosed. In one embodiment a dry glass frit comprises vanadium, phosphorous and a metal halide. The halide may be, for example, fluorine or chlorine. In another embodiment, a method of producing a dry glass frit comprises calcining a batch material for the frit, then melting the batch material in an inert atmosphere, such as a nitrogen atmosphere.

Abstract: The present invention provides methods of generating short wavelength radiation, methods of transporting short wavelength radiation, and apparati used in these methods. One embodiment of the invention provides a method of transporting short wavelength radiation using a photonic band gap fiber. Another embodiment of the invention provides a method of transporting short wavelength radiation using a bundle of photonic band gap fibers. Another embodiment of the invention provides a method of generating ultraviolet radiation using high harmonic generation by pumping a noble gas-filled photonic band gap fiber with a pulsed laser source.

Abstract: Disclosed is a synthetic silica glass optical material having high resistance to optical damage by ultraviolet radiation in the ultraviolet wavelength range, particularly in the wavelength region of less than about 250 nm and particularly, exhibiting a low laser induced density change. The synthetic silica glass optical material of the present invention contains at least about 0.1 ppm of aluminum and H2 concentration levels greater than about 0.5×1017 molecules/cm2. Additionally, the synthetic silica optical material of the present invention exhibits an H2 to Al ratio of greater than about 1.2, as measured in ×1017/cm3 molecules H2 per ppm Al.

Abstract: Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

Abstract: The invention relates to methods of writing a light-guiding structure in a bulk glass substrate. The bulk glass substrate is preferably made from a soft silica-based material having an annealing point less than about 1380° K. A pulsed laser beam is focused within the substrate while the focus is translated relative to the substrate along a scan path at a scan speed effective to induce an increase in the refractive index of the material along the scan path. Substantially no laser-induced physical damage of the material is incurred along the scan path. Various optical devices can be made using this method.

Abstract: The invention provides an ultraviolet lithography method/system. The lithography method and system include providing a below 200 nm radiation source, providing a photolytically improved transmitting fused silica glass lithography optical element, transmitting below 200 nm photons through said photolytically improved transmitting fused silica glass lithography optical element to form a lithography pattern which is reduced and projected onto a radiation sensitive lithography printing medium to form a printed lithography pattern. Providing the photolytically improved transmitting fused silica glass lithography optical element includes providing a photolytically improved transmitting fused silica glass lithography optical element preform body and forming the photolytically improved transmitting fused silica glass lithography optical element preform into said lithography optical element.

Abstract: The present invention relates generally to UV (ultraviolet) photosensitive bulk glass, and particularly to batch meltable alkali boro-alumino-silicate glasses. The photosensitive bulk glass of the invention exhibits photosensitivity to UV wavelengths below 300 nm. The photosensitivity of the alkali boro-alumino-silicate bulk glass to UV wavelengths below 300 nm provide for the making of refractive index patterns in the glass. With a radiation source below 300 nm, such a laser, refractive index patterns are formed in the glass. The inventive photosensitive optical refractive index pattern forming bulk glass allows for the formation of patterns in glass and devices which utilize such patterned glass.

Abstract: The present invention provides methods of generating short wavelength radiation, methods of transporting short wavelength radiation, and apparati used in these methods. One embodiment of the invention provides a method of transporting short wavelength radiation using a photonic band gap fiber. Another embodiment of the invention provides a method of transporting short wavelength radiation using a bundle of photonic band gap fibers. Another embodiment of the invention provides a method of generating ultraviolet radiation using high harmonic generation by pumping a noble gas-filled photonic band gap fiber with a pulsed laser source.

Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

Abstract: The present invention relates generally to UV (ultraviolet) photosensitive bulk glass, and particularly to batch meltable alkali boro-alumino-silicate and germanosilicate glasses. The photosensitive bulk glass of the invention exhibits photosensitivity to UV wavelengths below 300 nm. The photosensitivity of the alkali boro-alumino-silicate and germanosilicate bulk glasses to UV wavelengths below 300 nm provide for the making of refractive index patterns in the glass. With a radiation source below 300 nm, such a laser, refractive index patterns are formed in the glass. The inventive photosensitive optical refractive index pattern forming bulk glass allows for the formation of patterns in glass and devices which utilize such patterned glass.

Abstract: Disclosed are masks and mask blanks for photolithographic processes, photosensitive materials and fabrication method therefor. Photosensitive materials are used in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern dimension. The masks may have features above the surface formed from opaque or attenuating materials. Alumino-boro-germano-silicate glasses having a composition comprising, in terms of mole percentage, 1-6% of Al2O3, 10-36% of B2O3, 2-20% of GeO2, 40-80% of SiO2, 2-10% of R2O, where R is selected from Li, Na and K, and expressed in terms of weight percentage of the glass, 0-5% of F, can be used for the mask substrate.

Abstract: Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

Abstract: The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed calcium strontium cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of calcium strontium cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals, optical element blanks thereof and optical lithography elements.

Abstract: The invention provides an ultraviolet lithography method/system. The lithography method and system include providing a below 200 nm radiation source, providing a photolytically improved transmitting fused silica glass lithography optical element, transmitting below 200 nm photons through said photolytically improved transmitting fused silica glass lithography optical element to form a lithography pattern which is reduced and projected onto a radiation sensitive lithography printing medium to form a printed lithography pattern. Providing the photolytically improved transmitting fused silica glass lithography optical element includes providing a photolytically improved transmitting fused silica glass lithography optical element preform body and forming the photolytically improved transmitting fused silica glass lithography optical element preform into said lithography optical element.

Abstract: The invention provides a ≧4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.

Abstract: A method of writing a light guiding structure in a bulk glass substrate including selecting a bulk glass substrate made from a soft silica-based material; and focusing an excimer laser beam at a focus within said substrate while translating the focus relative to the substrate along a scan path at a scan speed effective to induce an increase in the refractive index of the material along the scan path relative to that of the unexposed material while incurring substantially no laser induced breakdown of the material along the scan path. Various optical devices, including waveguides can be made in this way.

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract: The invention provides a method of making a <194 nm wavelength calcium fluoride crystal optical lithography element for transmitting wavelengths less than about 194 nm along an optical axis with minimal birefringence by providing an optical element optical calcium fluoride crystal with an input face {100} crystal plane and forming the input face {100} crystal plane into an optical lithography element surface of an optical lithography element having an optical axis, with the optical axis aligned with a <100> crystal direction of the optical calcium fluoride crystal. In a preferred embodiment, the below 194 nm transmitting optical element is a <100>oriented calcium fluoride lens. In a preferred embodiment, the below 194 nm transmitting optical element is a <100> oriented calcium fluoride beam splitter.

Abstract: Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.