Abstract: In a process for creating a mask on the surface of an integrated circuit workpiece, a first layer of resist is applied to the surface of the workpiece. An upper portion of this first layer is metallized. A second layer of photoresist is applied to the first layer. The second layer of photoresist is selectively exposed and developed. Using the developed second layer as a mask, exposed respective areas of the metallized upper portion of the first layer are etched, and the non-metallized portions of the first layer are subsequently etched. The result is a metallized mask on the surface of the workpiece that avoids the problems of high topographical relief and irradiation reflections from the workpiece surface.