Abstract: VMOS transistors are formed with gate segments in dielectric trenches separating islands formed on a common dielectric base. A trench gate may be common for VMOS at opposed edges of adjacent islands, for VMOS at common edge of common islands or for VMOSs at uncommon edges of common islands. Common regions of an island may be used to form parallel or series VMOS with separate trench gates. The trenches may be formed after device region formation. Isolated gate segments may be formed by removing portions of dielectrically filled trenches to form recesses to be filled with gate material or forming gate material filled dielectric trenches and removing portions of the gate material and refilling with dielectric to form the isolated gate segments.

Abstract: VMOS transistors are formed with gate segments in dielectric trenches separating islands formed on a common dielectric base. A trench gate may be common for VMOS at opposed edges of adjacent islands, for VMOS at common edge of common islands or for VMOSs at uncommon edges of common islands. Common regions of an island may be used to form parallel or series VMOS with separate trench gates. The trenches may be formed after device region formation. Isolated gate segments may be formed by removing portions of dielectrically filled trenches to form recesses to be filled with gate material or forming gate material filled dielectric trenches and removing portions of the gate material and refilling with dielectric to form the isolated gate segments.