Abstract: Embodiments provide a switching circuit including a transistor and a bias circuit. The transistor may transition between an off state and an on state responsive to a control signal received at a control terminal. The bias circuit may be coupled between the control terminal and a gate terminal of the transistor. The bias circuit may include a gate resistor coupled between the gate terminal and the control terminal. The bias circuit may further include one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal to allow leakage current to pass from the gate terminal through the one or more diodes. In some embodiments, the bias circuit may include a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is off.

Abstract: Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a second FET. The drain contact of the second FET may also be coupled with the gate of the second FET through a resistor. The source contact of the second FET may be coupled with a diode which may be coupled with an LNA.

Abstract: Various embodiments may provide a termination element for a radio frequency (RF) power amplifier module. The termination element may include a resistive body having a first end, a second end, and first and second edges running from the first end to the second end opposite one another. The termination element may further include a first ground contact coupling the first end of the resistive body to a ground potential, and a second ground contact coupling the second end of the resistive body to the ground potential. The termination element may further include a conductive contact extending into the resistive body through the first edge, wherein an end of the conductive contact that is closest to the second edge is remotely disposed from the second edge by a gap.

Abstract: Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a second FET. The drain contact of the second FET may also be coupled with the gate of the second FET through a resistor. The source contact of the second FET may be coupled with a diode which may be coupled with an LNA.

Abstract: Embodiments provide a switching circuit including a transistor and a bias circuit. The transistor may transition between an off state and an on state responsive to a control signal received at a control terminal. The bias circuit may be coupled between the control terminal and a gate terminal of the transistor. The bias circuit may include a gate resistor coupled between the gate terminal and the control terminal. The bias circuit may further include one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal to allow leakage current to pass from the gate terminal through the one or more diodes. In some embodiments, the bias circuit may include a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is off.

Abstract: Various embodiments may provide a monolithic transformer for a radio frequency (RF) power amplifier module, such as a microwave frequency power amplifier module. The transformer may include a plurality of pairs of edge-coupled transmission lines, with individual pairs including first and second edge-coupled transmission lines. The first transmission lines may include first ends coupled with one another and second ends coupled with an input terminal of the transformer. The second transmission lines may include first ends coupled with the input terminal and second ends coupled with an output terminal of the transformer. The transformer may pass a communication signal from the input terminal to the output terminal, and provide a first impedance at the input terminal and a second impedance at the output terminal. The second impedance may be higher than the first impedance (e.g., by a factor of four).

Abstract: Various embodiments may provide a monolithic transformer for a radio frequency (RF) power amplifier module, such as a microwave frequency power amplifier module. The transformer may include a plurality of pairs of edge-coupled transmission lines, with individual pairs including first and second edge-coupled transmission lines. The first transmission lines may include first ends coupled with one another and second ends coupled with an input terminal of the transformer. The second transmission lines may include first ends coupled with the input terminal and second ends coupled with an output terminal of the transformer. The transformer may pass a communication signal from the input terminal to the output terminal, and provide a first impedance at the input terminal and a second impedance at the output terminal. The second impedance may be higher than the first impedance (e.g., by a factor of four).

Abstract: Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.

Abstract: Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.

Abstract: A broadband microwave active inductor circuit for producing a flat inductive response versus frequency comprises a pair of bipolar transistors arranged in a gyrator configuration for producing an active inductance. Because the transistors exhibit intrinsic characteristics which influence the inductive response of the active inductor circuit, a feedback network is connected to the gyrator configuration to compensate for the intrinsic characteristics of the transistors so that the active inductor circuit realizes a flat inductive response over a wide range of frequencies including microwave frequencies.