Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114?) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract: Interposer circuitry (130) is formed on a possibly sacrificial substrate (210) from a porous core (130?) covered by a conductive coating (130?) which increases electrical conductance. The core is printed from nanoparticle ink. Then a support (120S) is formed, e.g. by molding, to mechanically stabilize the circuitry. A magnetic field can be used to stabilize the circuitry while the circuitry or the support are being formed. Other features are also provided.

Abstract: An integrated circuit (IC) package includes a first substrate having a backside surface and a top surface with a cavity disposed therein. The cavity has a floor defining a front side surface. A plurality of first electroconductive contacts are disposed on the front side surface, and a plurality of second electroconductive contacts are disposed on the back side surface. A plurality of first electroconductive elements penetrate through the first substrate and couple selected ones of the first and second electroconductive contacts to each other. A first die containing an IC is electroconductively coupled to corresponding ones of the first electroconductive contacts. A second substrate has a bottom surface that is sealingly attached to the top surface of the first substrate, and a dielectric material is disposed in the cavity so as to encapsulate the first die.

Abstract: In a microelectronic device, a substrate has first upper and lower surfaces. An integrated circuit die has second upper and lower surfaces. Interconnects couple the first upper surface of the substrate to the second lower surface of the integrated circuit die for electrical communication therebetween. A via array has proximal ends of wires thereof coupled to the second upper surface for conduction of heat away from the integrated circuit die. A molding material is disposed in the via array with distal ends of the wires of the via array extending at least to a superior surface of the molding material.

Abstract: A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element.

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114?) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract: An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer.

Abstract: A device and method for localizing underfill includes a substrate, a plurality of dies, and underfill material. The substrate includes a plurality of contacts and a plurality of cavities separated by a plurality of mesas. The plurality of dies is mounted to the substrate using the plurality of contacts. The underfill material is located between the substrate and the dies. The underfill material is localized into a plurality of regions using the mesas. Each of the contacts is located in a respective one of the cavities. In some embodiments, the substrate further includes a plurality of channels interconnecting the cavities. In some embodiments, the substrate further includes a plurality of intra-cavity mesas for further localizing the underfill material. In some embodiments, outer edges of a first one of the dies rest on first mesas located on edges of a first one of the cavities.

Abstract: Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.

Abstract: Interposer circuitry (130) is formed on a possibly sacrificial substrate (210) from a porous core (130?) covered by a conductive coating (130?) which increases electrical conductance. The core is printed from nanoparticle ink. Then a support (120S) is formed, e.g. by molding, to mechanically stabilize the circuitry. A magnetic field can be used to stabilize the circuitry while the circuitry or the support are being formed. Other features are also provided.

Abstract: Die (110) and/or undiced wafers and/or multichip modules (MCMs) are attached on top of an interposer (120) or some other structure (e.g. another integrated circuit) and are covered by an encapsulant (160). Then the interposer is thinned from below. Before encapsulation, a layer (410) more rigid than the encapsulant is formed on the interposer around the die to reduce or eliminate interposer dishing between the die when the interposer is thinned by a mechanical process (e.g. CMP). Other features are also provided.

Abstract: A method of attaching a microelectronic element to a substrate can include aligning the substrate with a microelectronic element, the microelectronic element having a plurality of spaced-apart electrically conductive bumps each including a bond metal, and reflowing the bumps. The bumps can be exposed at a front surface of the microelectronic element. The substrate can have a plurality of spaced-apart recesses extending from a first surface thereof. The recesses can each have at least a portion of one or more inner surfaces that are non-wettable by the bond metal of which the bumps are formed. The reflowing of the bumps can be performed so that at least some of the bond metal of each bump liquefies and flows at least partially into one of the recesses and solidifies therein such that the reflowed bond material in at least some of the recesses mechanically engages the substrate.

Abstract: A microelectronic assembly includes a substrate, a first and second microelectronic elements, a lead finger, electrical connections extending between contacts of the second microelectronic element and the lead fingers, and an encapsulant overlying at least portions of the first and second microelectronic elements, lead finger and electrical connections. The substrate has contacts at a first surface and terminals at an opposed second surface that are electrically connected with the substrate contacts. The first microelectronic element has contacts exposed at its front face. The front face of the first microelectronic element is joined to the substrate contacts. The second microelectronic element overlies the first microelectronic element and has contacts at a front face facing away from the substrate. The lead frame has lead fingers, wherein the second surface of the substrate and the lead fingers define a common interface for electrical interconnection to a component external to the microelectronic assembly.

Abstract: Interposer circuitry (130) is formed on a possibly sacrificial substrate (210) from a porous core (130?) covered by a conductive coating (130?) which increases electrical conductance. The core is printed from nanoparticle ink. Then a support (120S) is formed, e.g. by molding, to mechanically stabilize the circuitry. A magnetic field can be used to stabilize the circuitry while the circuitry or the support are being formed. Other features are also provided.

Abstract: A method of processing an interconnection element can include providing a substrate element having front and rear opposite surfaces and electrically conductive structure, a first dielectric layer overlying the front surface and a plurality of conductive contacts at a first surface of the first dielectric layer, and a second dielectric layer overlying the rear surface and having a conductive element at a second surface of the second dielectric layer. The method can also include removing a portion of the second dielectric layer so as to reduce the thickness of the portion, and to provide a raised portion of the second dielectric layer having a first thickness and a lowered portion having a second thickness. The first thickness can be greater than the second thickness. At least a portion of the conductive element can be recessed below a height of the first thickness of the second dielectric layer.

Abstract: Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate. The dies are located in cavities in the protective substrate (the dies may protrude out of the cavities). In some embodiments, each cavity surface puts pressure on the die to strengthen the mechanical attachment of the die the wiring substrate, to provide good thermal conductivity between the dies and the ambient (or a heat sink), to counteract the die warpage, and possibly reduce the vertical size. The protective substrate may or may not have its own circuitry connected to the dies or to the wiring substrate. Other features are also provided.

Abstract: An apparatus relates generally to an integrated circuit package. In such an apparatus, a package substrate has a first plurality of via structures extending from a lower surface of the package substrate to an upper surface of the package substrate. An die has a second plurality of via structures extending to a lower surface of the die. The lower surface of the die faces the upper surface of the package substrate in the integrated circuit package. The package substrate does not include a redistribution layer. The die and the package substrate are coupled to one another.

Abstract: A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element.

Abstract: Die (110) are attached to an interposer (420), and the interposer/die assembly is placed into a lid cavity (510). The lid (210) is attached to the top of the assembly, possibly to the encapsulant (474) at the top. The lid's legs (520) surround the cavity and extend down below the top surface of the interposer's substrate (420S), possibly to the level of the bottom surface of the substrate or lower. The legs (520) may or may not be attached to the interposer/die assembly. In fabrication, the interposer wafer (420SW) has trenches (478) which receive the lid's legs during the lid placement. The interposer wafer is later thinned to remove the interposer wafer portion below the legs and to dice the interposer wafer. The thinning process also exposes, on the bottom, conductive vias (450) passing through the interposer substrate. Other features are also provided.

Abstract: Die (110) and/or undiced wafers and/or multichip modules (MCMs) are attached on top of an interposer (120) or some other structure (e.g. another integrated circuit) and are covered by an encapsulant (160). Then the interposer is thinned from below. Before encapsulation, a layer (410) more rigid than the encapsulant is formed on the interposer around the die to reduce or eliminate interposer dishing between the die when the interposer is thinned by a mechanical process (e.g. CMP). Other features are also provided.