Abstract: Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Abstract: Described are gas-processing systems that include a media vessel and a pre-heater, that are used to process a gas by flowing the gas to contact media contained in the media vessel, such as a catalyst or adsorbent material, and related methods.

Abstract: Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Abstract: Described are gas-processing systems that include a pre-heater, that are useful for processing a flow of gas flowing the gas to contact media (e.g., purification media, catalyst, adsorbent), and related methods.

Abstract: Described are methods, devices, and systems useful for removing gaseous ammonia from a gas mixture at a pressure in an ambient pressure range by allowing the ammonia to adsorb onto a solid adsorbent, as well as related systems and methods.

Abstract: The present invention is embodied in a carbon dioxide compression and delivery device that uses a plurality of reversible thermoelectric devices and to a method to operate such carbon dioxide compression and delivery device.

Abstract: Described are methods, devices, and systems useful for removing gaseous ammonia from a gas mixture at a pressure in an ambient pressure range by allowing the ammonia to adsorb onto a solid adsorbent, as well as related systems and methods.

Abstract: Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Abstract: The present invention is embodied in a carbon dioxide compression and delivery device that uses a plurality of reversible thermoelectric devices and to a method to operate such carbon dioxide compression and delivery device.

Abstract: The present invention is embodied in a carbon dioxide compression and delivery device that uses a plurality of reversible thermoelectric devices and to a method to operate such carbon dioxide compression and delivery device.

Abstract: An Ultra High Purity (UHP) carbon dioxide purification system and a method for purification of UHP carbon dioxide is disclosed. The purification system includes supported nickel oxide and supported palladium oxide. An upper portion of the purification system is at least partially filled with supported nickel oxide, and a lower portion of the purification system is at least partially filled with supported palladium oxide. The upper and lower portions of the purification system have a physical separation but are in fluid communication. The method includes purification or pre-purification of High Purity (HP) carbon dioxide to Ultra High Purity (UHP) levels including feeding carbon dioxide of High Purity grade or better to an Ultra High Purity carbon dioxide purification system.

Abstract: An Ultra High Purity (UHP) carbon dioxide purification system and a method for purification of UHP carbon dioxide is disclosed. The purification system includes supported nickel oxide and supported palladium oxide. An upper portion of the purification system is at least partially filled with supported nickel oxide, and a lower portion of the purification system is at least partially filled with supported palladium oxide. The upper and lower portions of the purification system have a physical separation but are in fluid communication. The method includes purification or pre-purification of High Purity (HP) carbon dioxide to Ultra High Purity (UHP) levels including feeding carbon dioxide of High Purity grade or better to an Ultra High Purity carbon dioxide purification system.

Abstract: The invention teaches a purification system which uses a series of operations, in a single unit, to purify air, while extending the life of the purification units. Air is passed through a coarse water trap to remove liquid. The semi-dry air, is then passed through adsorbers, which remove the remaining moisture and all the carbon dioxide in a purification process. The present invention flows the air to be purified through adsorption columns twice, before and after passing the air through an oxygen catalyst unit. The flows of air are then rotated to a third column, which is thermally regenerating with the facilitation of a regeneration air supply from the purified air.

Abstract: The invention teaches a purification system which uses a series of operations, in a single unit, to purify air, while extending the life of the purification units. Air is passed through a coarse water trap to remove liquid. The semi-dry air, which is usually less than 3000 ppm of water vapor, is then passed through adsorbers, which remove the remaining moisture and all the carbon dioxide in a purification process. The drying of the air before passing it through the adsorbers allows for greatly improved efficiency of air purification and extends the life of both the oxygen catalyst and the adsorption columns. The present invention also flows the air to be purified through adsorption columns twice, before and after passing the air through an oxygen catalyst unit.

Abstract: A semiconductor manufacturing system includes a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility. The gas distribution network supplies purified gas to at least one wafer processing chamber in the semiconductor fabrication facility. The gas purifier includes a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between the inlet and the outlet. Getter material which purifies gas flowing therethrough by sorbing impurities therefrom is disposed in the vessel. A first temperature sensor is disposed in a top portion of the getter material. The first temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates the presence of excess impurities in the incoming gas to be purified. A second temperature sensor is disposed in a bottom portion of the getter material.

Abstract: The present invention provides a method and apparatus to purify various gases utilizing the superior performance a heated getter process in a smaller package than previous multiple stage, heated getter processes. The smaller package includes inner and outer enclosures, and an integral, regenerative heat exchanger to simultaneously increase heater efficiency and cool the purified gas. The invention also includes a particle filter to remove particles from the gas flow. The invention further provides an interface to various modular gas stick substrate designs with an inlet and an outlet in one end of the integrated heated getter purifier system. The inlet gas is preheated by the integral heat exchanger and then heated to operating temperature of 200-400° C. The heated getter removes various impurities from the gas. The heated gas is then cooled in the integral heat exchanger. The cooled gas is exposed to a second quantity of cooler getter to remove residual impurities.

Abstract: A semiconductor manufacturing system includes a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility. The gas distribution network supplies purified gas to at least one wafer processing chamber in the semiconductor fabrication facility. The gas purifier includes a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between the inlet and the outlet. Getter material which purifies gas flowing therethrough by sorbing impurities therefrom is disposed in the vessel. A first temperature sensor is disposed in a top portion of the getter material. The first temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates the presence of excess impurities in the incoming gas to be purified. A second temperature sensor is disposed in a bottom portion of the getter material.

Abstract: A semiconductor manufacturing system includes a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility. The gas distribution network supplies purified gas to at least one wafer processing chamber in the semiconductor fabrication facility. The gas purifier includes a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between the inlet and the outlet. Getter material which purifies gas flowing therethrough by sorbing impurities therefrom is disposed in the vessel. A first temperature sensor is disposed in a top portion of the getter material. The first temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates the presence of excess impurities in the incoming gas to be purified. A second temperature sensor is disposed in a bottom portion of the getter material.

Abstract: A semiconductor manufacturing system includes a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility. The gas distribution network supplies purified gas to at least one wafer processing chamber in the semiconductor fabrication facility. The gas purifier includes a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between the inlet and the outlet. Getter material which purifies gas flowing therethrough by sorbing impurities therefrom is disposed in the vessel. A first temperature sensor is disposed in a top portion of the getter material. The first temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates the presence of excess impurities in the incoming gas to be purified. A second temperature sensor is disposed in a bottom portion of the getter material.

Abstract: The invention relates generally to a gas purification system for the purification of noble gasses and nitrogen. An improved method of purification generally includes the following steps: (a) heating an impure gas; (b) contacting the impure gas with an impurity sorbing material to produce a purified gas; (c) cooling the purified gas to a temperature less than about 100.degree. C.; and (d) contacting the purified gas with a hydrogen sorbing gas to remove residual hydrogen. The system includes an improved heat exchange apparatus for cooling the purified gas and a low temperature hydrogen sorption apparatus.