Patents by Inventor Charles J. Taft
Charles J. Taft has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9165801Abstract: A recyclable fluid cleaning system wafers includes a cleaning vessel configured to clean semiconductor wafers immersed in a bath of persulfuric acid cleaning solution, the cleaning solution circulated through a primary process tool fluid path; a secondary fluid path that diverts a portion of the persulfuric acid cleaning solution for electrolysis treatment thereof; an electrolysis reactor within the secondary fluid path that receives oxidant depleted sulfuric acid, the electrolysis reactor having electrodes that, when activated causes sulfate ions in the solution to be oxidized and form persulfate ions that are recombined with fluid from the primary fluid path and fed back to the cleaning vessel; and one or more controller devices in operative communication with the cleaning vessel and with the electrolysis reactor.Type: GrantFiled: November 14, 2013Date of Patent: October 20, 2015Assignee: International Business Machines CorporationInventors: Richard O. Henry, David F. Hilscher, Sandi E. Merritt, Charles J. Taft, Robert W. Zigner, Jr.
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Patent number: 8992691Abstract: A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.Type: GrantFiled: April 5, 2011Date of Patent: March 31, 2015Assignee: International Business Machines CorporationInventors: Richard O. Henry, David F. Hilscher, Sandi E. Merritt, Charles J. Taft, Robert W. Zigner, Jr.
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Patent number: 8828143Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.Type: GrantFiled: October 2, 2007Date of Patent: September 9, 2014Assignee: International Business Machines CorporationInventors: John P. Simons, Kenneth J. McCullough, Wayne M. Moreau, John M. Cotte, Keith R. Pope, Charles J. Taft, Dario L. Goldfarb
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Publication number: 20140060596Abstract: A recyclable fluid cleaning system wafers includes a cleaning vessel configured to clean semiconductor wafers immersed in a bath of persulfuric acid cleaning solution, the cleaning solution circulated through a primary process tool fluid path; a secondary fluid path that diverts a portion of the persulfuric acid cleaning solution for electrolysis treatment thereof; an electrolysis reactor within the secondary fluid path that receives oxidant depleted sulfuric acid, the electrolysis reactor having electrodes that, when activated causes sulfate ions in the solution to be oxidized and form persulfate ions that are recombined with fluid from the primary fluid path and fed back to the cleaning vessel; and one or more controller devices in operative communication with the cleaning vessel and with the electrolysis reactor.Type: ApplicationFiled: November 14, 2013Publication date: March 6, 2014Applicant: International Business Machines CorporationInventors: Richard O. Henry, David F. Hilscher, Sandi E. Merritt, Charles J. Taft, Robert W. Zigner, JR.
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Publication number: 20130210235Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.Type: ApplicationFiled: October 2, 2007Publication date: August 15, 2013Applicant: International Business Machines CorporationInventors: John P. Simons, Kenneth J. McCullough, Wayne M. Moreau, John M. Cotte, Keith R. Pope, Charles J. Taft, Dario L. Goldfarb
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Patent number: 8388758Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.Type: GrantFiled: October 2, 2007Date of Patent: March 5, 2013Assignee: International Business Machines CorporationInventors: John P. Simons, Kenneth J. McCullough, Wayne M. Moreau, John M. Cotte, Keith R. Pope, Charles J. Taft, Dario L. Goldfarb
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Publication number: 20120255577Abstract: A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.Type: ApplicationFiled: April 5, 2011Publication date: October 11, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Richard O. Henry, David F. Hilscher, Sandi E. Merritt, Charles J. Taft, Robert W. Zigner, JR.
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Publication number: 20090235955Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.Type: ApplicationFiled: October 2, 2007Publication date: September 24, 2009Applicant: International Business Machines CorporationInventors: John P. Simons, Kenneth J. McCullough, Wayne M. Moreau, John M. Cotte, Keith R. Pope, Charles J. Taft, Dario L. Goldfarb
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Patent number: 7485964Abstract: A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.Type: GrantFiled: April 6, 2006Date of Patent: February 3, 2009Assignee: International Business Machines CorporationInventors: John M. Cotte, Kenneth John McCullough, Wayne Martin Moreau, Kevin Petrarca, John P. Simons, Charles J. Taft, Richard Volant
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Patent number: 7354874Abstract: The present invention is directed to a semiconductor apparatus that enables in situ wet processing of semiconductor wafers, and prevents creation of a static pressure within the in situ wet processing system. The apparatus comprises multiple exhaust receptacles. Each exhaust receptacle is operable in an open and closed position and receives an associated toxic wet processing byproduct only in the open position. An exhaust is connected to each exhaust receptacle and suctions the contents of said exhaust receptacle in both the open and closed positions. An intake is connected to said exhaust receptacle only when the exhaust receptacle is in a closed position. The intake introduces a gas chemically compatible to the toxic wet processing byproduct associated with the exhaust receptacle. The exhaust releases the toxic wet processing byproduct and the chemically compatible gas to the same waste stream at the semiconductor factory.Type: GrantFiled: September 23, 2005Date of Patent: April 8, 2008Assignee: International Business Machines CorporationInventors: Michael R. Biagetti, Charles J. Taft
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Patent number: 7332436Abstract: A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.Type: GrantFiled: October 15, 2004Date of Patent: February 19, 2008Assignee: International Business Machines CorporationInventors: John Michael Cotte, Dario L. Goldfarb, Pamela Jones, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Patent number: 7288155Abstract: A method for cleaning a semiconductor structure including providing a chamber for holding the semiconductor structure and a dense phase fluid, providing a thermal transfer device having a thermal transfer surface, connecting the thermal transfer device to the chamber, placing the semiconductor structure in the chamber in contact with the thermal transfer surface and thermally cycling the thermal transfer surface.Type: GrantFiled: May 12, 2005Date of Patent: October 30, 2007Assignee: International Business Machines CorporationInventors: John P. Simons, Kenneth J. McCullough, Wayne M. Moreau, John M. Cotte, Keith R. Pope, Charles J. Taft, Dario Goldfarb
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Patent number: 7081208Abstract: Methods are provided for making microfilters by subtractive techniques which remove a component or part of a filter material to form pores in the filter material and additive techniques which deposit a filter material onto a porous underlying substrate. All the methods employ a supercritical fluid or mixture which have very high solvency properties and low viscosity and CO2 is the preferred supercritical fluid.Type: GrantFiled: December 16, 2002Date of Patent: July 25, 2006Assignee: International Business Machines CorporationInventors: Kenneth J McCullough, Wayne M Moreau, Keith R Pope, Robert J Purtell, John P Simons, William A Syverson, Charles J Taft
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Patent number: 7056837Abstract: A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.Type: GrantFiled: June 6, 2003Date of Patent: June 6, 2006Assignee: International Business Machines CorporationInventors: John M. Cotte, Kenneth John McCullough, Wayne Martin Moreau, Kevin Petrarca, John P. Simons, Charles J. Taft, Richard Volant
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Patent number: 6997197Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.Type: GrantFiled: December 13, 2002Date of Patent: February 14, 2006Assignee: International Business Machines CorporationInventors: John P. Simons, Kenneth J. McCullough, Wayne M. Moreau, John M. Cotte, Keith R. Pope, Charles J. Taft, Dario L. Goldfarb
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Patent number: 6927393Abstract: A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.Type: GrantFiled: December 16, 2002Date of Patent: August 9, 2005Assignee: International Business Machines CorporationInventors: John M. Cotte, Kenneth J. McCullough, Wayne M. Moreau, Keith R. Pope, Robert J. Purtell, John P. Simons, Charles J. Taft
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Patent number: 6890855Abstract: A process of removing residue from an etched precision surface. In this process the etched precision surface is contacted with a composition which includes liquid or supercritical carbon dioxide and a fluoride-generating species.Type: GrantFiled: June 27, 2001Date of Patent: May 10, 2005Assignee: International Business Machines CorporationInventors: John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Patent number: 6875286Abstract: A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.Type: GrantFiled: December 16, 2002Date of Patent: April 5, 2005Assignee: International Business Machines CorporationInventors: John M. Cotte, Catherine Ivers, Kenneth J. McCullough, Wayne M. Moreau, Robert J. Purtell, John P. Simons, William A. Syverson, Charles J. Taft
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Patent number: 6838015Abstract: A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.Type: GrantFiled: September 4, 2001Date of Patent: January 4, 2005Assignee: International Business Machines CorporationInventors: John Michael Cotte, Dario L. Goldfarb, Pamela Jones, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Patent number: 6834671Abstract: A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.Type: GrantFiled: December 22, 2003Date of Patent: December 28, 2004Assignee: International Business Machines CorporationInventors: John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, John P. Simons, Charles J. Taft, Richard P. Volant