Abstract: A method for use in planning metrology measurements, the method comprising: providing inverse total measurement uncertainty (TMU) analysis equations for upper and lower confidence limits TMUUL and TMULL of the TMU being independent on prior knowledge of measurements by a tool under test (TuT) and a reference measurement system (RMS), thereby enabling estimation of input parameters for said equations prior to conducting an experiment of the TMU analysis; and determining at least one of a total number N of samples to be measured in the TMU analysis and an average number ns of measurements per sample by the RMS.

Abstract: A method for use in planning metrology measurements, the method comprising: providing inverse total measurement uncertainty (TMU) analysis equations for upper and lower confidence limits TMUUL and TMULL of the TMU being independent on prior knowledge of measurements by a tool under test (TuT) and a reference measurement system (RMS), thereby enabling estimation of input parameters for said equations prior to conducting an experiment of the TMU analysis; and determining at least one of a total number N of samples to be measured in the TMU analysis and an average number ns of measurements per sample by the RMS.

Abstract: A method for measuring a dimension of a device includes receiving an image of a portion of the device, receiving a first offset value and a second offset value, processing the image to define a least one graph of a line of pixels, the at least one graph including the brightness level of each pixel in a line of pixels, identifying a location of a first peak and a second peak in the graph, defining a first exclusion area boundary, defining a second exclusion area boundary, setting the brightness level of the pixels between the first exclusion area boundary and the second exclusion area boundary to zero, identifying a first portion of the feature of interest and a second portion of the feature of interest, and measuring a distance between the first portion of the feature of interest and the second portion of the feature of interest.

Abstract: A method for measuring a dimension of a device includes receiving an image of a portion of the device, receiving a first offset value and a second offset value, processing the image to define a least one graph of a line of pixels, the at least one graph including the brightness level of each pixel in a line of pixels, identifying a location of a first peak and a second peak in the graph, defining a first exclusion area boundary, defining a second exclusion area boundary, setting the brightness level of the pixels between the first exclusion area boundary and the second exclusion area boundary to zero, identifying a first portion of the feature of interest and a second portion of the feature of interest, and measuring a distance between the first portion of the feature of interest and the second portion of the feature of interest.

Abstract: Optical measurement method and systems employing a fixed polarizer are disclosed. In one embodiment, the method includes providing at least one optical detection system having a fixed polarizer having a first type polarization; providing a first target on a substrate and a second target on the substrate; optically measuring the first target and the second target using the at least one optical detection system with the first target being positioned at a right angle relative to the second target to obtain a first measurement with the first type polarization and a second measurement with a second type-equivalent polarization; and combining the first measurement and the second measurement to obtain the optical measurement.

Abstract: A method is provided for monitoring a photolithographic process in which a substrate is patterned to form (i) a scatterometry target having a plurality of parallel elongated features, and desirably, (ii) other features each having at least one of a microelectronic function or a micro-electromechanical function. Desirably, each elongated feature of the scatterometry target has a length in a lengthwise direction and a plurality of stress-relief features disposed at a plurality of positions along the length of each elongated feature. A return signal is detected in response to illumination of the scatterometry target. The return signal can be used to determine a result of the photolithographic process.

Abstract: A method of preparing recipes of operating a metrology tool, wherein each recipe includes a set of instructions for measuring at least one dimension in a microelectronic feature. There is provided a desired recipe having instructions for measuring one or more desired dimensions, the desired recipe or portion thereof including a summary of parameters relating to metrology tool function with respect to the microelectronic feature dimension to be measured. The method includes comparing the instructions in the desired recipe with the instructions in a database, identifying differences between the instructions in the desired recipe and the instructions in the database, modifying the instructions in the desired recipe to conform to the instructions in the database, verifying the desired recipe prior to using the modified desired recipe by the metrology tool, and using the desired recipe to execute a microelectronic feature measurement on the metrology tool.

Abstract: Methods and related program product for assessing and optimizing metrology instruments by determining a total measurement uncertainty (TMU) based on precision and accuracy. The TMU is calculated based on a linear regression analysis and removing a reference measuring system uncertainty (URMS) from a net residual error. The TMU provides an objective and more accurate representation of whether a measurement system under test has an ability to sense true product variation.

Abstract: A method, system and program product are disclosed for optimizing a fleet of measurement systems. One embodiment determines a tool matching precision (TMP) and a fleet measurement precision (FMP) and normalizes these metrics across applications. An optimization is carried out in which usage weighting factors are assigned to each measurement system while enforcing usage enforcement rule(s) to ensure that each measurement system is optimally used and each application is adequately covered. The optimization re-assigns usage weighting factors to minimize a normalized FMP metric and enforce the usage enforcement rule(s).

Abstract: Optical measurement method and systems employing a fixed polarizer are disclosed. In one embodiment, the method includes providing at least one optical detection system having a fixed polarizer having a first type polarization; providing a first target on a substrate and a second target on the substrate; optically measuring the first target and the second target using the at least one optical detection system with the first target being positioned at a right angle relative to the second target to obtain a first measurement with the first type polarization and a second measurement with a second type-equivalent polarization; and combining the first measurement and the second measurement to obtain the optical measurement.

Abstract: Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause issue of a matching problem, and for determining a fleet measurement precision metric. Method, system and program product are also disclosed for attempting to determine a root cause of a subject problem related to at least one of a measurement system under test (MSUT) and a fleet of at least one other measurement system.

Abstract: A method of producing an accurate critical dimension measurement comprises navigating to a critical dimension structure, performing a scanning electron microscope focusing, performing a final location alignment, acquiring waveform data, analyzing the data to determine an approximate critical dimension, analyzing the data to determine a stepper focus parameter, combining the stepper focus parameter with the critical dimension to generate an accurate critical dimension value, and reporting the same.

Abstract: Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause of a matching problem, and for determining a fleet measurement precision metric.

Abstract: Methods and related program product for assessing and optimizing metrology instruments by determining a total measurement uncertainty (TMU) based on precision and accuracy. The TMU is calculated based on a linear regression analysis and removing a reference measuring system uncertainty (URMS) from a net residual error. The TMU provides an objective and more accurate representation of whether a measurement system under test has an ability to sense true product variation. The invention also includes a method for determining an uncertainty of the TMU.

Abstract: A method is provided for monitoring a photolithographic process in which a substrate is patterned to form (i) a scatterometry target having a plurality of parallel elongated features, and desirably, (ii) other features each having at least one of a microelectronic function or a micro-electromechanical function. Desirably, each elongated feature of the scatterometry target has a length in a lengthwise direction and a plurality of stress-relief features disposed at a plurality of positions along the length of each elongated feature. A return signal is detected in response to illumination of the scatterometry target. The return signal can be used to determine a result of the photolithographic process.

Abstract: Methods and related program product for assessing and optimizing metrology instruments by determining a total measurement uncertainty (TMU) based on precision and accuracy. The TMU is calculated based on a linear regression analysis and removing a reference measuring system uncertainty (URMS) from a net residual error. The TMU provides an objective and more accurate representation of whether a measurement system under test has an ability to sense true product variation. The invention also includes a method for determining an uncertainty of the TMU.

Abstract: Methods and related program product for assessing and optimizing metrology instruments by determining a total measurement uncertainty (TMU) based on precision and accuracy. The TMU is calculated based on a linear regression analysis and removing a reference measuring system uncertainty (URMS) from a net residual error. The TMU provides an objective and more accurate representation of whether a measurement system under test has an ability to sense true product variation.

Abstract: A method, system and program product are disclosed for optimizing a fleet of measurement systems. One embodiment determines a tool matching precision (TMP) and a fleet measurement precision (FMP) and normalizes these metrics across applications. An optimization is carried out in which usage weighting factors are assigned to each measurement system while enforcing usage enforcement rule(s) to ensure that each measurement system is optimally used and each application is adequately covered. The optimization re-assigns usage weighting factors to minimize a normalized FMP metric and enforce the usage enforcement rule(s).

Abstract: Methods and related program product for assessing and optimizing metrology instruments by determining a total measurement uncertainty (TMU) based on precision and accuracy. The TMU is calculated based on a linear regression analysis and removing a reference measuring system uncertainty (URMS) from a net residual error. The TMU provides an objective and more accurate representation of whether a measurement system under test has an ability to sense true product variation.

Abstract: Optimizing a measurement system under test (MSUT) is disclosed. In one embodiment, a method includes selecting a first set of adjustable parameters of the MSUT that affect a quality metric for the MSUT, calculating the quality metric over a range of values of each adjustable parameter in the first set of adjustable parameters, generating a first multidimensional response space based on the calculating step, and determining which value of each adjustable parameter optimizes the quality metric based on the first multidimensional response space. The multidimensional response space may be stored for later recall for other optimization exercises.