Patents by Inventor Charles P. Beetz
Charles P. Beetz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9332776Abstract: Methods and apparatus provide for spray drying a liquid product into a dried powder without applying heat, including: forming a slurry including a liquid solvent, a carrier, and an active ingredient; applying an electrostatic charge to the slurry; atomizing the charged slurry to produce a plurality of electrostatically charged, wet particles; suspending the electrostatically charged, wet particles for a sufficient time to permit repulsive forces induced by the electrostatic charge on at least some wet particles to cause at least some of such particles to divide into wet sub-particles; and continuing the suspending step, without the presence of any heated drying fluids, for a sufficient time to drive off a sufficient amount of the liquid solvent within most of the wet particles to leave a plurality of dried particles (the powder), each dried particle containing the active ingredient encapsulated within the carrier.Type: GrantFiled: January 27, 2015Date of Patent: May 10, 2016Assignee: ZOOMESSENCE, INC.Inventors: Charles P. Beetz, Robert Corbett, David Salem
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Patent number: 8939388Abstract: Methods and apparatus provide for spray drying a liquid product into a dried powder without applying heat, including: forming a slurry including a liquid solvent, a carrier, and an active ingredient; applying an electrostatic charge to the slurry; atomizing the charged slurry to produce a plurality of electrostatically charged, wet particles; suspending the electrostatically charged, wet particles for a sufficient time to permit repulsive forces induced by the electrostatic charge on at least some wet particles to cause at least some of such particles to divide into wet sub-particles; and continuing the suspending step, without the presence of any heated drying fluids, for a sufficient time to drive off a sufficient amount of the liquid solvent within most of the wet particles to leave a plurality of dried particles (the powder), each dried particle containing the active ingredient encapsulated within the carrier.Type: GrantFiled: September 26, 2011Date of Patent: January 27, 2015Assignee: ZoomEssence, Inc.Inventors: Charles P. Beetz, Robert Corbett, David Salem
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Patent number: 6750153Abstract: A silicon element having macrocavities beneath its exterior surface is fabricated by electrochemical etching of a p-type silicon wafer. Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.Type: GrantFiled: October 24, 2001Date of Patent: June 15, 2004Assignee: NanoSciences CorporationInventors: Charles P. Beetz, Jr., Robert W. Boerstler
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Publication number: 20020086551Abstract: A silicon element having macrocavities beneath its exterior surface is fabricated by electrochemical etching of a p-type silicon wafer. Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.Type: ApplicationFiled: October 24, 2001Publication date: July 4, 2002Inventors: Charles P. Beetz, Robert W. Boerstler
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Patent number: 6384519Abstract: A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.Type: GrantFiled: October 30, 1997Date of Patent: May 7, 2002Assignee: NanoSciences CorporationInventors: Charles P. Beetz, Jr., John Steinbeck, Robert W. Boertsler, David R. Winn
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Patent number: 6268229Abstract: Integrated circuits, including field emission devices, have a resistor element of amorphous SixC1-x wherein 0<x<1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.Type: GrantFiled: December 14, 1999Date of Patent: July 31, 2001Assignees: Advanced Technology Materials, Inc., Silicon Video CorporationInventors: George R. Brandes, Charles P. Beetz, Xueping Xu, Swayambu V. Ramani, Ronald S. Besser
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Patent number: 6045677Abstract: A microchannel plate and method of manufacturing same is provided. The microchannel plate includes a plate consisting of an anodized material and a plurality of channels which are formed during the anodization of the material and extend between the two sides of the plate. Electrodes are also disposed on each side of the plate for generating an electrical field within the channels. Preferably, the material is alumina and the channels are activated such that the channel walls are conductive and highly secondary emissive.Type: GrantFiled: February 27, 1997Date of Patent: April 4, 2000Assignee: NanoSciences CorporationInventors: Charles P. Beetz, Jr., Robert W. Boerstler, John Steinbeck, David R. Winn
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Patent number: 6031250Abstract: Integrated circuits, including field emission devices, have a resistor element of amorphous Si.sub.x C.sub.1-x wherein 0<x<1, and wherein the Si.sub.x C.sub.1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.Type: GrantFiled: December 20, 1995Date of Patent: February 29, 2000Assignees: Advanced Technology Materials, Inc., Silicon Video CorporationInventors: George R. Brandes, Charles P. Beetz, Xueping Xu, Swayambu V. Ramani, Ronald S. Besser
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Patent number: 5997713Abstract: An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.Type: GrantFiled: May 8, 1998Date of Patent: December 7, 1999Assignee: NanoSciences CorporationInventors: Charles P. Beetz, Jr., Robert W. Boerstler, John Steinbeck, David R. Winn
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Patent number: 5989406Abstract: A magnetically shape-anisotropic material is made by providing a matrix with a plurality of elongated holes, and depositing first and second magnetic materials in each hole so as to form elongated particles including the first material adjacent one end and the second material adjacent the opposite end. One of the materials is a magnetically soft material having relatively low coercivity whereas the other material is a magnetically hard material having relatively high coercivity. The particles have dimensions transverse to their axes of elongation smaller than the magnetic domain size of the magnetically soft material.Type: GrantFiled: October 17, 1997Date of Patent: November 23, 1999Assignee: NanoSciences CorporationInventors: Charles P. Beetz, Jr., John Steinbeck, Robert W. Boerstler, David R. Winn
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Patent number: 5973444Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.Type: GrantFiled: November 12, 1998Date of Patent: October 26, 1999Assignee: Advanced Technology Materials, Inc.Inventors: Xueping Xu, Charles P. Beetz, George R. Brandes, Robert W. Boerstler, John W. Steinbeck
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Patent number: 5872422Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.Type: GrantFiled: December 20, 1995Date of Patent: February 16, 1999Assignee: Advanced Technology Materials, Inc.Inventors: Xueping Xu, Charles P. Beetz, George R. Brandes, Robert W. Boerstler, John W. Steinbeck
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Patent number: 5741435Abstract: A static magnetic memory includes a layer having a plurality of vertically oriented and shape-anisotropic elongated ferromagnetic particles. A plurality of writing conductors are adjacent the layer, and the conductors selectively apply magnetic fields to selected regions of the layer by directing electrical current to magnetize the particles in an up or down direction. Static reading means detect the direction of magnetization. The particles may include a soft magnet portion and a hard magnet portion. In another preferred embodiment, a material and a method of making same includes providing a matrix full of elongated holes, depositing a first magnetic material having a first coercivity into the holes, and then depositing a second magnetic material having a second coercivity into the holes to form a composite elongated particle in each hole.Type: GrantFiled: August 8, 1995Date of Patent: April 21, 1998Assignee: Nano Systems, Inc.Inventors: Charles P. Beetz, Jr., John Steinbeck, Robert W. Boerstler, David R. Winn
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Patent number: 5424126Abstract: In a preferred embodiment, an inorganic fiber having a diameter between about 1 and 10 microns is formed by chemical vapor deposition of inorganic material, such as boron, onto a carbon filament having a diameter less than about 50 nanometers.Type: GrantFiled: December 19, 1985Date of Patent: June 13, 1995Assignee: General Motors CorporationInventors: Gary G. Tibbetts, Charles P. Beetz, Michael G. Devour
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Patent number: 5122509Abstract: A multilayer superconducting thin film composite article, comprising a carbon-containing substrate, and an interlayer comprising a material selected from the group consisting of zirconium, yttrium, niobium, and carbides and oxides thereof, platinum, iridium, gold, palladium, and silver, and an overlayer comprising an HTSC material. The carbon-containing substrate preferably comprises diamond and the interlayer preferably comprises a zirconium carbide sub-layer at the interface with the substrate, an intermediate sub-layer of zirconium metal, and an outer sub-layer of zirconium oxide at the interface with the HTSC material overlayer. The superconducting thin film material may comprise a copper oxide HTSC material, with YBaCuO, TlBaCaCuO, and BiSrCaCuO HTSC materials being preferred.Type: GrantFiled: April 30, 1990Date of Patent: June 16, 1992Assignee: Advanced Technology Materials, Inc.Inventors: Charles P. Beetz, Jr., Peter S. Kirlin
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Patent number: 5051785Abstract: N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e.g., lithium, arsenic, phosphorous, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implanation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed.Type: GrantFiled: June 22, 1989Date of Patent: September 24, 1991Assignee: Advanced Technology Materials, Inc.Inventors: Charles P. Beetz, Jr., Douglas C. Gordon, Duncan W. Brown
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Patent number: 5030583Abstract: A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a base having a generally planar main top surface from which upwardly extends a regular array of posts, the base being formed of single crystal material which is crystallographically compatible with epitaxial single crystal materials to be deposited thereon. The single crystal epitaxial layers are formed on top surfaces of the posts which preferably have a quardrilateral cross-section, e.g., a square cross-section whose sides are from about 0.5 to about 20 micrometers in length, to accommodate the formation of substantially defect-free, single crystal epitaxial layers thereon. The single crystal epitaxial layer may be selectively doped to provide for p-type and p.sup.Type: GrantFiled: November 1, 1990Date of Patent: July 9, 1991Assignee: Advanced Technolgy Materials, Inc.Inventor: Charles P. Beetz, Jr.
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Patent number: 5006914Abstract: A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a base having a generally planar main top surface from which upwardly extends a regular array of posts, the base being formed of single crystal material which is crystallographically compatible with epitaxial single crystal materials to be deposited thereon. The single crystal epitaxial layers are formed on top surfaces of the posts which preferably have a quadrilateral cross-section, e.g., a square cross-section whose sides are from about 0.5 to about 20 micrometers in length, to accommodate the formation of substantially defect-free, single crystal epitaxial layers thereon. The single crystal epitaxial layer may be selectively doped to provide for p-type and p.sup.Type: GrantFiled: December 2, 1988Date of Patent: April 9, 1991Assignee: Advanced Technology Materials, Inc.Inventor: Charles P. Beetz, Jr.