Abstract: An optoelectronic device. The device comprises: a silicon-on-insulator platform, including a silicon waveguide, formed in a silicon device layer, a silicon substrate, and a cavity; a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor based device and the substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device.

Abstract: A semiconductor device. In some embodiments, the semiconductor device includes: a first layer having a first region and a second region, the first region being corrugated with a plurality of corrugations, the second region being uncorrugated. A first cycle of the corrugations may have a first duty cycle and a second cycle of the corrugations may have a second duty cycle, the second cycle being between the first cycle and the second region, and the second duty cycle being between the first duty cycle and the duty cycle of the second region.

Abstract: A high-speed, directly modulated ridge waveguide laser includes: a ridge structure at a junction surface of the laser chip; and a plurality of pads only on non-active areas of the junction surface, where the plurality of pads protrude beyond an edge of the ridge structure. The laser chip can thus be held by a manufacturing tool, such that the manufacturing tool abuts the pads without abutting the ridge structure. In this manner, the ridge structure of the laser is protected from damage due to contacts by manufacturing tools, increasing the device yield of a wafer. By providing the pads only on the non-active areas of the junction surface, parasitic capacitance for contacts in the active areas can be properly controlled.

Abstract: A high-speed, directly modulated ridge waveguide laser includes: a ridge structure at a junction surface of the laser chip; and a plurality of pads only on non-active areas of the junction surface, where the plurality of pads protrude beyond an edge of the ridge structure. The laser chip can thus be held by a manufacturing tool, such that the manufacturing tool abuts the pads without abutting the ridge structure. In this manner, the ridge structure of the laser is protected from damage due to contacts by manufacturing tools, increasing the device yield of a wafer. By providing the pads only on the non-active areas of the junction surface, parasitic capacitance for contacts in the active areas can be properly controlled.

Abstract: A chemical vapor deposition apparatus for depositing at least one layer of material with controlled substrate-to-substrate variation onto a plurality of substrates is disclosed, comprising a reactor including at least one gas inlet (40) and one gas outlet (60), a planetary susceptor rotation means (14) containing a plurality of secondary susceptors (114) for supporting and heating the substrates (110), and a heating means (50) for heating the secondary susceptors.

Abstract: A coherent receiver for electromagnetic radiation comprising an input optics (10) for collecting an input signal of electromagnetic radiation at a frequency F.sub.S, an optical local oscillator (100) for generating an optical signal at a frequency F.sub.O amplitude-modulated at a frequency F.sub.LO, a mixer element (60) responsive simultaneously to the frequencies F.sub.S, F.sub.O, and F.sub.LO, where the input signal is injected electrically into the mixer element and the optical signal is injected optically into the mixer element to produce an output signal at a frequency F.sub.IF equal to the difference between F.sub.S and F.sub.LO, and electronics (50) connected to the mixer element for processing the output signal.

Abstract: A chemical vapor deposition process for depositing at least one layer of material onto a plurality of substrates is disclosed, which comprises providing a reactor containing a planetary susceptor rotation means comprising a plurality of secondary susceptors for supporting said substrates, wherein said rotation means allows simultaneously at least two significantly different rotation rates for said secondary susceptors, and rotating said secondary susceptors simultaneouly at said two or more rotation rates during at least a portion of depositing said layer, wherein at least one of said two or more signicantly different rotation rates is not zero.