Patents by Inventor Che-Ling CHANG

Che-Ling CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087961
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ju CHOU, Chih-Chung Chang, Jun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Kao, Chen-Hsuan Liao
  • Patent number: 11923250
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Ju Chou, Chih-Chung Chang, Jiun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Gao, Chen-Hsuan Liao
  • Publication number: 20240071825
    Abstract: Systems, devices and methods of manufacturing a system on silicon wafer (SoSW) device and package are described herein. A plurality of functional dies is formed in a silicon wafer. Different sets of masks are used to form different types of the functional dies in the silicon wafer. A first redistribution structure is formed over the silicon wafer and provides local interconnects between adjacent dies of the same type and/or of different types. A second redistribution structure may be formed over the first redistribution layer and provides semi-global and/or global interconnects between non-adjacent dies of the same type and/or of different types. An optional backside redistribution structure may be formed over a second side of the silicon wafer opposite the first redistribution layer. The optional backside redistribution structure may provide backside interconnects between functional dies of different types.
    Type: Application
    Filed: November 7, 2023
    Publication date: February 29, 2024
    Inventors: Chen-Hua Yu, Wei Ling Chang, Chuei-Tang Wang, Tin-Hao Kuo, Che-Wei Hsu
  • Publication number: 20220152267
    Abstract: A wound dressing includes a substrate, an insulating layer, at least one ion sustainable-released body, and at least one electrode. The insulating layer is disposed on the substrate, with the at least one ion sustainable-released body being uniformly disposed at the insulating layer. The ion sustainable-released body includes ions. The electrode is disposed on the insulating layer, and the electrode and the ions are functioned as an electron donor and an electron acceptor respectively.
    Type: Application
    Filed: November 18, 2020
    Publication date: May 19, 2022
    Inventors: You-Syuan Gao, Shan-Jen Kuo, Jen-Chieh Wei, Che-Ling Chang
  • Patent number: 11311715
    Abstract: The disclosure provides a self-powered sheet which is configured to absorb a liquid content and to be applied on a human skin. The self-powered sheet includes a base layer and a plurality of electrically conductive inks. The base layer is configured to absorb the liquid content and adapted to be applied on the human skin. The base layer has a contact surface. The electrically conductive inks are disposed on the contact surface of the base layer. Each of the electrically conductive inks has a plurality of first electrodes and a plurality of second electrodes. When each of the first electrodes and each of the second electrodes are soaked in the liquid content, an electrical potential difference between one of the plurality of first electrodes and one of the plurality of second electrodes generates a current in the human skin.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: April 26, 2022
    Assignee: CYMMETRIK ENTERPRISE CO., LTD.
    Inventors: Wen-An Lin, Che-Ling Chang
  • Publication number: 20200114143
    Abstract: The disclosure provides a self-powered sheet which is configured to absorb and to be applied on a human skin. The self-powered sheet includes a base layer and a plurality of electrically conductive inks. The base layer is configured to absorb the liquid and adapted to be applied on the human skin. The base layer has a contact surface. The electrically conductive inks are disposed on the contact surface of the base layer. Each of the electrically conductive inks has a plurality of first electrodes and a plurality of second electrodes. When each of the first electrodes and each of the second electrodes are soaked in the liquid, an electrical potential difference between one of the plurality of first electrodes and one of the plurality of second electrodes generate a current in the human skin.
    Type: Application
    Filed: October 12, 2018
    Publication date: April 16, 2020
    Applicant: CYMMETRIK ENTERPRISE CO.,LTD.
    Inventors: Wen-An LIN, Che-Ling CHANG