Abstract: A helmet has a body, a cover and a chinstrap. The body has a lower segment, an upper segment and an illuminant assembly. The upper segment has multiple locking slots and recesses. The illuminant assembly is mounted in the recesses and has a circuit board, at least one battery seat, multiple illuminants and multiple electrical wires. The cover is mounted detachably on the upper segment of the body and has multiple windows, longitudinal slots and fasteners. The windows are defined through the cover and align respectively with the illuminants. The longitudinal slots are defined through the cover and align respectively with the locking slots. The fasteners detachably mount respectively through the longitudinal slots in the cover and locking slots, and each fastener has a knob and a T-shaped latch. The illuminants are replaced easily by detaching the cover. The chinstrap is attached to the body.

Abstract: A passivation structure for a semiconductor device includes a high ultraviolet transmittance silicon nitride (UV-SiN) layer. This UV-SiN layer substantially conformally overlies a plurality of top metal lines, which are formed over a semiconductor substrate, such that topographical hollows are defined between adjacent top metal lines. A spin-on glass (SOG) material fills in the topographical hollows. A silicon oxynitride (SiON) layer having a thickness in a range from about 8,000 angstroms to about 10,000 angstroms overlies the UV-SiN layer and the SOG material. A method for forming the passivation structure also is described.