Patents by Inventor Chen-En Yen
Chen-En Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961944Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.Type: GrantFiled: January 31, 2023Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
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Patent number: 11942445Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.Type: GrantFiled: August 23, 2021Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Chin-Wei Kang, Kai-Jun Zhan, Wen-Hsiung Lu, Cheng-Jen Lin, Ming-Da Cheng, Mirng-Ji Lii
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Publication number: 20240021499Abstract: Some devices included a substrate; and a through via, including a plurality of scallops adjacent the through via in a first region and a plurality of scallops adjacent the through via in a second region, the of scallops having a first depth, the scallops having a greater depth. Some devices include an opening extending into a substrate, including a first region and a second region. Sidewalls of the opening include a stack of first concave portions extending a first distance into the first substrate, and a stack of second concave portions extending a second distance, greater than and parallel to the first distance, into the first substrate. A conductor partially fills the first concave portions and at least partially fills the respective second concave portions.Type: ApplicationFiled: July 31, 2023Publication date: January 18, 2024Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Publication number: 20230369049Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.Type: ApplicationFiled: July 11, 2023Publication date: November 16, 2023Inventors: Chang-Jung Hsueh, Chen-En Yen, Chin Wei Kang, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
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Patent number: 11776881Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: GrantFiled: March 25, 2022Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Patent number: 11742204Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.Type: GrantFiled: May 10, 2021Date of Patent: August 29, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chang-Jung Hsueh, Chen-En Yen, Chin Wei Kang, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
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Publication number: 20230170443Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.Type: ApplicationFiled: January 31, 2023Publication date: June 1, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
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Patent number: 11569419Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.Type: GrantFiled: October 30, 2020Date of Patent: January 31, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
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Publication number: 20220216133Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: ApplicationFiled: March 25, 2022Publication date: July 7, 2022Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Publication number: 20220140197Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.Type: ApplicationFiled: October 30, 2020Publication date: May 5, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
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Patent number: 11289404Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: GrantFiled: January 17, 2020Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Publication number: 20210384152Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En YEN, Chin-Wei KANG, Kai-Jun ZHAN, Wen-Hsiung LU, Cheng-Jen LIN, Ming-Da CHENG, Mirng-Ji LII
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Patent number: 11177137Abstract: A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.Type: GrantFiled: January 17, 2020Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Hsiung Lu, Hui-Min Huang, Ming-Da Cheng, Wei-Hung Lin, Chen-En Yen, Hsu-Lun Liu
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Patent number: 11152319Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.Type: GrantFiled: May 10, 2020Date of Patent: October 19, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Hsiung Lu, Chen-Shien Chen, Chen-En Yen, Cheng-Jen Lin, Chin-Wei Kang, Kai-Jun Zhan
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Publication number: 20210265165Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.Type: ApplicationFiled: May 10, 2021Publication date: August 26, 2021Inventors: Chang-Jung Hsueh, Chen-En Yen, Chin Wei Kang, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
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Patent number: 11101233Abstract: A method for forming a semiconductor device is provided. The method includes providing a substrate. The method includes forming a mask layer over a surface of the substrate. The mask layer has an opening over a portion of the surface. The method includes depositing a conductive layer over the surface and the mask layer. The method includes removing the mask layer and the conductive layer over the mask layer. The conductive layer remaining after the removal of the mask layer and the conductive layer over the mask layer forms a conductive pad. The method includes bonding a device to the conductive pad through a solder layer. The conductive pad is embedded in the solder layer.Type: GrantFiled: May 7, 2020Date of Patent: August 24, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-En Yen, Chin-Wei Kang, Kai-Jun Zhan, Wen-Hsiung Lu, Cheng-Jen Lin, Ming-Da Cheng, Mirng-Ji Lii
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Publication number: 20210225735Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: ApplicationFiled: January 17, 2020Publication date: July 22, 2021Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Publication number: 20210225658Abstract: A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.Type: ApplicationFiled: January 17, 2020Publication date: July 22, 2021Inventors: Wen-Hsiung Lu, Hui-Min Huang, Ming-Da Cheng, Wei-Hung Lin, Chen-En Yen, Hsu-Lun Liu
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Patent number: 11004685Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.Type: GrantFiled: November 25, 2019Date of Patent: May 11, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chang-Jung Hsueh, Chen-En Yen, Chin Wei Kang, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
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Publication number: 20200273827Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.Type: ApplicationFiled: May 10, 2020Publication date: August 27, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Hsiung Lu, Chen-Shien Chen, Chen-En Yen, Cheng-Jen Lin, Chin-Wei Kang, Kai-Jun Zhan