Patents by Inventor Chen-Fu Lin
Chen-Fu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967563Abstract: A Fan-Out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.Type: GrantFiled: August 16, 2021Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yan-Fu Lin, Chen-Hua Yu, Meng-Tsan Lee, Wei-Cheng Wu, Hsien-Wei Chen
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Patent number: 11942433Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.Type: GrantFiled: January 17, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Jen-Fu Liu, Ming Hung Tseng, Tsung-Hsien Chiang, Yen-Liang Lin, Tzu-Sung Huang
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Patent number: 8704278Abstract: A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.Type: GrantFiled: March 13, 2012Date of Patent: April 22, 2014Assignee: Seoul National University Industry FoundationInventors: Ying-Zong Juang, Hann-Huei Tsai, Hsin-Hao Liao, Chen-Fu Lin
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Publication number: 20130153969Abstract: A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.Type: ApplicationFiled: March 13, 2012Publication date: June 20, 2013Applicant: National Chip Implementation Center National Applied Research LaboratoriesInventors: Ying-Zong JUANG, Hann-Huei Tsai, Hsin-Hao Liao, Chen-Fu Lin
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Patent number: 8466521Abstract: A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.Type: GrantFiled: March 16, 2010Date of Patent: June 18, 2013Assignee: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Long Wey, Chin-Fong Chiu, Ying-Zong Juang, Hann-Huei Tsai, Chen-Fu Lin
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Publication number: 20130146899Abstract: A complementary metal-oxide semiconductor (CMOS) sensor with an image sensing unit integrated therein is provided. The CMOS sensor includes a first substrate, a CMOS circuit, and a sensing device. The first substrate has the image sensing unit formed thereon. The CMOS circuit is disposed on the first substrate and has a receiving space. The sensing device is disposed in the receiving space. The image sensing unit is located at a position from which the image sensing unit can monitor the sensing device. Accordingly, the image sensing unit monitors the sensing device by sensing its image.Type: ApplicationFiled: February 29, 2012Publication date: June 13, 2013Applicant: National Chip Implementation Center National Applied Research LaboratoriesInventors: Ying-Zong JUANG, Hann-Huei Tsai, Hsin-Hao Liao, Chen-Fu Lin
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Patent number: 8410480Abstract: The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.Type: GrantFiled: February 19, 2010Date of Patent: April 2, 2013Assignee: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Fong Chiu, Ying Zong Juang, Hann Huei Tsai, Sheng-Hsiang Tseng, Chen-Fu Lin
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Patent number: 8158063Abstract: A biosensor package structure with a micro-fluidic channel is provided. The biosensor package structure includes a substrate, a biochip, and a cover. The substrate has a first surface, a second surface, and an opening. The biochip is attached on the first surface. A bio-sensing area of the biochip is exposed to the opening of the substrate. The cover is attached on the second surface to cover the opening so as to form a micro-fluidic channel. By implementing the invention, the manufacturing process of the biosensor is simplified and the productivity is increased.Type: GrantFiled: December 12, 2008Date of Patent: April 17, 2012Assignee: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Fong Chiu, Ying-Zong Juang, Hann-Huei Tsai, Chen-Fu Lin
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Publication number: 20120086020Abstract: This invention relates to an integrated photodetecting device. The integrated photodetecting device includes a substrate, a light source layer and a photodetector layer. The photodetector layer and light source layer are epitaxied in a stacked structure. The whole device in this invention is fabricated by epitaxy method during a single process. Therefore, the production cost can be reduced by the omission of alignment process. Besides, the integrated photodetecting device of the invention integrates the light source and photodetector into one chip, hence has the ability of minimization, resulting in the reduction of consumption of samples and test time. The distance between the photodetector layer and targets to be tested can also be largely reduced, making the accuracy and sensitivity largely improved, and the kinds of detectable targets largely increased. Furthermore, the integrated photodetecting device of the invention is a portable device so as to increase the possibility of preventive medicine.Type: ApplicationFiled: April 6, 2011Publication date: April 12, 2012Applicant: National Cheng Kung UniversityInventors: Yan-Kuin Su, Shyh-Jer Huang, Chen-Fu Lin
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Publication number: 20110169056Abstract: A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.Type: ApplicationFiled: March 16, 2010Publication date: July 14, 2011Applicant: National Chip Implementation Center National Applied Research Laboratories.Inventors: Chin-Long Wey, Chin-Fong Chiu, Ying-Zong Juang, Hann-Huei Tsai, Chen-Fu Lin
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Publication number: 20110133256Abstract: The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.Type: ApplicationFiled: February 19, 2010Publication date: June 9, 2011Applicant: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Fong Chiu, Ying Zong Juang, Hann Huei Tsai, Sheng-Hsiang Tseng, Chen-Fu Lin
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Publication number: 20100098585Abstract: A biosensor package structure with a micro-fluidic channel is provided. The biosensor package structure includes a substrate, a biochip, and a cover. The substrate has a first surface, a second surface, and an opening. The biochip is attached on the first surface. A bio-sensing area of the biochip is exposed to the opening of the substrate. The cover is attached on the second surface to cover the opening so as to form a micro-fluidic channel. By implementing the invention, the manufacturing process of the biosensor is simplified and the productivity is increased.Type: ApplicationFiled: December 12, 2008Publication date: April 22, 2010Applicant: National Chip Implementation Center National Applied Research LaboratoiesInventors: Chin-Fong CHIU, Ying-Zong Juang, Hann-Huei Tsai, Chen-Fu Lin
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Publication number: 20100099582Abstract: A biochip package structure is provided. The biochip package structure includes a substrate, a biochip, at least one wire, and a molding compound. The substrate has a circuit unit electrically connected, by wiring, to the biochip defined with a sensing region. The molding compound covers the wire but leaves the sensing region of the biochip exposed, allowing a cavity to be formed in the sensing region. The cavity delivers a biomedical sample. The biomedical sample reacts in the sensing region. Thus, the biochip package structure is applicable to various medical and biochemical assays.Type: ApplicationFiled: December 17, 2008Publication date: April 22, 2010Applicant: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Fong Chiu, Ying-Zong Juang, Hann-huei Tsai, Chen-Fu Lin
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Publication number: 20090155948Abstract: A manufacture method for CMOS sensor, which comprise of steps such as: forming protection layer on a substrate having multiple device structural layers, then using first photo-resist layer as mask for etching to form patterned molecular sensing layer, then forming third photo resist layer and etching protection layer and substrate so as to remove partial substrate underneath the sensor structure.Type: ApplicationFiled: December 18, 2007Publication date: June 18, 2009Applicant: National Applied Research LaboratoriesInventors: Chen-Fu Lin, Hann-Huei Tsai, Ying-Zong Juang, Chin-Fong Chiu
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Patent number: D333594Type: GrantFiled: October 28, 1991Date of Patent: March 2, 1993Inventor: Chen-Fu Lin