Patents by Inventor Chen Heng

Chen Heng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240169743
    Abstract: Disclosed are a vehicle positioning method based on environment matching, a vehicle positioning device based on environment matching, a vehicle and a storage medium. The method includes: obtaining current environment data and a current road image of a location of a vehicle to be located; searching for an environmental impact road image set matching with the current environment data; matching the current road image with an environmental impact road image in the environmental impact road image set respectively to obtain a target environmental impact road image matching with the current road image; and determining current location information of the vehicle to be located based on the target environmental impact road image.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 23, 2024
    Applicants: ZHEJIANG GEELY HOLDING GROUP CO., LTD., NINGBO GEELY AUTOMOBILE RESEARCH & DEVELOPMENT CO., LTD
    Inventors: Chen JIN, Hongxi LU, Junjie ZHOU, Yang HENG, Haojie DU
  • Publication number: 20240154028
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a buffer layer between the channel layer and the substrate. The method can further include forming a recess structure in the channel layer. The recess structure can include a bottom surface over the buffer layer. The method can further include forming a first epitaxial layer over the bottom surface of the recess structure. The first epitaxial layer can include a first atomic concentration of germanium. The method can further include forming a second epitaxial layer over the first epitaxial layer. The second epitaxial layer can include a second atomic concentration of germanium greater than the first atomic concentration of germanium.
    Type: Application
    Filed: January 17, 2024
    Publication date: May 9, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Heng LI, Yi-Jing LI, Chia-Der CHANG
  • Patent number: 11923436
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a buffer layer between the channel layer and the substrate. The method can further include forming a recess structure in the channel layer. The recess structure can include a bottom surface over the buffer layer. The method can further include forming a first epitaxial layer over the bottom surface of the recess structure. The first epitaxial layer can include a first atomic concentration of germanium. The method can further include forming a second epitaxial layer over the first epitaxial layer. The second epitaxial layer can include a second atomic concentration of germanium greater than the first atomic concentration of germanium.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Heng Li, Yi-Jing Li, Chia-Der Chang
  • Publication number: 20230298944
    Abstract: The present disclosure describes a method that includes forming a fin protruding from a substrate, the fin including a first sidewall and a second sidewall formed opposite to the first sidewall. The method also includes depositing a shallow-trench isolation (STI) material on the substrate. Depositing the STI material includes depositing a first portion of the STI material in contact with the first sidewall and depositing a second portion of the STI material in contact with the second sidewall. The method also includes performing a first etching process on the STI material to etch the first portion of the STI material at a first etching rate and the second portion of the STI material at a second etching rate greater than the first etching rate. The method also includes performing a second etching process on the STI material to etch the first portion of the STI material at a third etching rate and the second portion of the STI material at a fourth etching rate less than the third etching rate.
    Type: Application
    Filed: May 25, 2023
    Publication date: September 21, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: I-Sheng CHEN, Yi-Jing LI, Chen-Heng LI
  • Patent number: 11699620
    Abstract: The present disclosure describes a method that includes forming a fin protruding from a substrate, the fin including a first sidewall and a second sidewall formed opposite to the first sidewall. The method also includes depositing a shallow-trench isolation (STI) material on the substrate. Depositing the STI material includes depositing a first portion of the STI material in contact with the first sidewall and depositing a second portion of the STI material in contact with the second sidewall. The method also includes performing a first etching process on the STI material to etch the first portion of the STI material at a first etching rate and the second portion of the STI material at a second etching rate greater than the first etching rate. The method also includes performing a second etching process on the STI material to etch the first portion of the STI material at a third etching rate and the second portion of the STI material at a fourth etching rate less than the third etching rate.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: July 11, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: I-Sheng Chen, Yi-Jing Li, Chen-Heng Li
  • Publication number: 20220045198
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a buffer layer between the channel layer and the substrate. The method can further include forming a recess structure in the channel layer. The recess structure can include a bottom surface over the buffer layer. The method can further include forming a first epitaxial layer over the bottom surface of the recess structure. The first epitaxial layer can include a first atomic concentration of germanium. The method can further include forming a second epitaxial layer over the first epitaxial layer. The second epitaxial layer can include a second atomic concentration of germanium greater than the first atomic concentration of germanium.
    Type: Application
    Filed: April 1, 2021
    Publication date: February 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Heng LI, Yi-Jing Li, Chia-Der Chang
  • Publication number: 20210375693
    Abstract: The present disclosure describes a method that includes forming a fin protruding from a substrate, the fin including a first sidewall and a second sidewall formed opposite to the first sidewall. The method also includes depositing a shallow-trench isolation (STI) material on the substrate. Depositing the STI material includes depositing a first portion of the STI material in contact with the first sidewall and depositing a second portion of the STI material in contact with the second sidewall. The method also includes performing a first etching process on the STI material to etch the first portion of the STI material at a first etching rate and the second portion of the STI material at a second etching rate greater than the first etching rate. The method also includes performing a second etching process on the STI material to etch the first portion of the STI material at a third etching rate and the second portion of the STI material at a fourth etching rate less than the third etching rate.
    Type: Application
    Filed: April 8, 2021
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: I-Sheng CHEN, Yi-Jing LI, Chen-Heng LI
  • Publication number: 20210223280
    Abstract: A hot-wire anemometer comprises a probe. The probe has a probe head disposed at an end thereof. The probe head has an elongated narrow hole or a plurality of round holes being provided with at least a metal wire segment extending in an axial direction of the probe head to enlarge a contact area between the metal wires and a fluid. According to an average temperature of the larger area, a more accurate wind velocity is measured.
    Type: Application
    Filed: January 18, 2021
    Publication date: July 22, 2021
    Inventor: Chen Heng CHENG
  • Patent number: 10366941
    Abstract: Provided is a package structure including a substrate, a metal pad, a first polymer layer, a second polymer layer, a redistribution layer (RDL), and a third polymer layer. The metal pad is located on the substrate. The first polymer layer is located on the substrate. The first polymer layer has a first opening which exposes a portion of a top surface of the metal pad. The second polymer layer is located on the first polymer layer. The second polymer layer has a second opening which exposes the portion of the top surface of the metal pad and a first top surface of the first polymer layer. The RDL covers the portion of the top surface of the metal pad and extends onto a portion of the first top surface of the first polymer layer and the second polymer layer. The third polymer layer is located on the RDL.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: July 30, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Chen-Heng Liu, Yung-Fu Chang
  • Publication number: 20180240736
    Abstract: Provided is a package structure including a substrate, a metal pad, a first polymer layer, a second polymer layer, a redistribution layer (RDL), and a third polymer layer. The metal pad is located on the substrate. The first polymer layer is located on the substrate. The first polymer layer has a first opening which exposes a portion of a top surface of the metal pad. The second polymer layer is located on the first polymer layer. The second polymer layer has a second opening which exposes the portion of the top surface of the metal pad and a first top surface of the first polymer layer. The RDL covers the portion of the top surface of the metal pad and extends onto a portion of the first top surface of the first polymer layer and the second polymer layer. The third polymer layer is located on the RDL.
    Type: Application
    Filed: December 26, 2017
    Publication date: August 23, 2018
    Applicant: Winbond Electronics Corp.
    Inventors: Chen-Heng Liu, Yung-Fu Chang
  • Publication number: 20160073943
    Abstract: A lancing device includes a front cap detachably capped on a front side of a shell, a lancet, and a lancet holder linearly movably mounted in the shell for securing the lancet. The lancet holder is configured to provide one or multiple guide portions at the outer perimeter thereof. The front cap has one or multiple guide tracks located at an inner wall thereof corresponding to the stroke of the guide portion of the lancet holder. Thus, under the guidance of the guide track, the lancet and the lancet holder can be moved smoothly with minimized vibration to reduce the sense of pain suffered by the user.
    Type: Application
    Filed: September 11, 2015
    Publication date: March 17, 2016
    Inventor: Chen-Heng CHENG
  • Publication number: 20150051630
    Abstract: A lancing device includes a main body and a replaceable lancet. A front cover is detachably mounted to a front end of the main body and formed by a shell and a positioning member connected inside the shell for receiving the lancet. A shock absorber is mounted in between the shell and the positioning member. When the lancet is fired by a built-in percussion unit of the main body to move forward, the front end of the lancet collides with a stop portion of the positioning member, and the lancet stops movement and instantaneously retracts. Meanwhile, most or all of the vibrational energy generated when the front end of the lancet collides with the positioning member can be absorbed by the shock absorber. In this way, the vibration in the process of the blood sampling can be reduced to further minimize the pain felt by the testee.
    Type: Application
    Filed: September 17, 2013
    Publication date: February 19, 2015
    Applicant: BIOTEST MEDICAL CORPORATION
    Inventor: Chen-Heng CHENG
  • Publication number: 20150010813
    Abstract: A curved battery and manufacturing method thereof, includes the following steps: electroplating an electrode sheet, rolling said electrode sheet along its long side, first sealing, heating, pouring in electrolyte fluid, charging, vacuuming, second sealing, and shaping. Wherein, the electrode sheet is of a long strip shape, with its outside wrapped with separation film, to separate the positive electrode and negative electrode. While perform rolling, it is performed along its long side, to remove the stress that may occur after the product is produced. Then, sealing is performed by using films made of water resistant and heat resistant material for sealing at least three side edges. Pour in electrolyte fluid of LiPF6 in an overall temperature of 75 degrees. Afterwards, charging the electrolyte fluid, perform vacuuming, and perform second sealing. Finally, using heated tools to bend the half-finished battery into shape, to form a curved battery having uniform curvature.
    Type: Application
    Filed: July 3, 2014
    Publication date: January 8, 2015
    Inventors: Chen-Heng Ko, Chao-Tsan Huang, Guiping Zhang
  • Publication number: 20130317280
    Abstract: A magnetic field generating seat cushion includes a cushion body, and a magnetic field generator, which is mounted in the cushion body, including a main circuit board, an inner coil and an outer coil. The inner and outer coils are electrically connected to the main circuit board. The main circuit board and the outer coil can generate an alternating current to go through the inner coil, causing the inner coil to generate an alternating magnetic field. In comparison to the outer coil, the inner coil has a high number of turns and a relatively smaller area for generating a high strength magnetic field in a small area with low electricity consumption to intermittently oxygenate the body tissues of a person sitting or lying on the cushion body, thereby generating a massage-like effect and achieving muscle-relaxing, blood-circulating and metabolism-enhancing effects.
    Type: Application
    Filed: May 22, 2012
    Publication date: November 28, 2013
    Applicant: BIOTEST MEDICAL CORPORATION
    Inventor: Chen-Heng CHENG
  • Patent number: 8563467
    Abstract: A method of preparing activated carbon, is disclosed, comprising: exposing carbonaceous material to microwave radiation in the presence of water to produce activated carbon.
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: October 22, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Zaher Hashisho, Chen Heng
  • Publication number: 20130141123
    Abstract: A pH-meter capable of measuring conductivity and dissolved oxygen at the same time is composed of a gauge and three probes. Three power sources and three measuring circuits are mounted to the gauge. The detectors of the probes include a pH detector, a conductivity detector and a dissolved oxygen detector. Each of the probes is independently connected with the gauge via a transmission cable to be independently supplied with electricity and the signals of two probes are independently transmitted by electric insulation. Thus, the detecting elements can measure the pH value, conductivity, and dissolved oxygen at the same time with interference with one another.
    Type: Application
    Filed: February 7, 2012
    Publication date: June 6, 2013
    Applicant: AZ INSTRUMENT CORP.
    Inventor: Chen-Heng CHENG
  • Publication number: 20130047722
    Abstract: A dry and wet bulb psychrometer consists of a first temperature sensor, a second temperature sensor, a water tank, a water absorbing member, a computing circuit and a display screen. The water absorbing member is connected to the second temperature sensor and dipped in water in the water tank. The computing circuit is electrically coupled with the first and second temperature sensors for computing a humidity value by using the temperature values sensed by the first and second temperature sensors and displaying the computed result on the display screen for reading by a user. Thus, the dry and wet bulb psychrometer is convenient for application to provide high-precision level measurement.
    Type: Application
    Filed: October 19, 2011
    Publication date: February 28, 2013
    Applicant: AZ INSTRUMENT CORP.
    Inventor: Chen-Heng CHENG
  • Publication number: 20120286761
    Abstract: A waterproof pH meter includes a main unit, a probe, which includes a probe electrode and a signal processing circuit, and a waterproof signal transmission line electrically coupled between a main circuit in the main unit and the signal processing circuit of the probe. When measuring a solution, a potential signal generated by the probe electrode is amplified by the signal processing circuit and then transmitted to the main unit through the waterproof signal transmission line for reading by the user. As the design has a better capacity in bearing noise interference, the signal transmission line can be selected from a regular waterproof cable instead of a BNC material.
    Type: Application
    Filed: March 16, 2012
    Publication date: November 15, 2012
    Applicant: AZ INSTRUMENT CORP.
    Inventor: Chen-Heng CHENG
  • Patent number: D710796
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: August 12, 2014
    Assignee: Power Source Energy Co., Ltd.
    Inventors: Chen-Heng Ko, Chao-Tsan Huang, Guiping Zhang
  • Patent number: D893626
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 18, 2020
    Assignee: Aquarry Technology Inc.
    Inventor: Chen-Heng Lin