Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: An air purifier including a housing, a front cover, a front wire gauze filter, an anion generating pin board, a dust collector, and an active carbon filter, wherein: the housing has a plurality of parallel tracks horizontally disposed at different elevations for mounting the front wire gauze filter, the anion generating pin board, the dust collector, and the active carbon filter, a plurality of arched metal springs fixedly fastened to the parallel tracks for connecting power supply to the anion generating pin board and the dust collector, a side cover, and a micro switch which turns on power supply when the side cover is installed, or to turn off power supply when the side cover is removed from the housing; the dust collector has a plurality of equally spaced round holes over the whole area thereof, and is controlled to produce positive ions; the anion generating pin board has a plurality of triangular projecting plates perpendicularly raised from one side thereof and respectively aimed at the center of every