Patents by Inventor Chenfeng Zhang

Chenfeng Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230080878
    Abstract: An application of a traditional Chinese medicine composition in preparing a medicine for treating or preventing coronavirus infection. The traditional Chinese medicine composition is characterized by being prepared from the following raw materials in parts by weight: 5-15 parts of Cornu saigae tataricae or 50-150 parts of goral horns, 10-60 parts of Bulbus Fritillariae Ussuriensis, 15-60 parts of Radix et Rhizoma Rhei, 7-30 parts of Radix scutellariae, 7-30 parts of Lapis Chloriti, 10-50 parts of gypsum fibrosum, 5-20 parts of calculus bovis artifactus, and 15-60 parts of radix glycyrrhizae. The traditional Chinese medicine composition can inhibit 2019-nCoV replication in cells, so that cells infected by 2019-nCoV viruses have no lesion. Therefore, the traditional Chinese medicine composition can treat or prevent coronavirus related diseases.
    Type: Application
    Filed: December 16, 2020
    Publication date: March 16, 2023
    Applicant: JIANGSU KANION PHARMACEUTICAL CO., LTD.
    Inventors: Wei XIAO, Liang CAO, Zhenzhong WANG, Chenfeng ZHANG, Xinzhuang ZHANG, Zeyu CAO
  • Patent number: 11564904
    Abstract: A Ginkgo diterpene lactone composition is provided. The extract can lower the neurological function score of a cerebral ischemia-reperfusion rat, reduce the cerebral ischemia area and the water content after brain tissue edema, improve SOD activity, and decrease the MDA content. The composition can inhibit rabbit platelet aggregation induced by PAF and ADP inducers at different time points so as to reduce the maximum aggregation rate. In addition, experiments show that the effect of each monomer compound in the Ginkgo diterpene lactone composition is significantly increased at certain proportion.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: January 31, 2023
    Assignee: JIANGSU KANION PHARMACEUTICAL CO., LTD.
    Inventors: Wei Xiao, Xiujuan Chang, Enli Zhou, Xiaodong Kang, Yongxiang Wang, Hanfei Hu, Yun Wu, Zhenzhong Wang, Chenfeng Zhang
  • Patent number: 11524041
    Abstract: A Ginkgo diterpene lactone composition is provided. The composition has the effect of improving a depressive state. The composition can prolong a tail flick interval time and a swimming interval time of a mouse to different degrees and can also increase the frequency of escaping from electric shock to different degrees. The additional addition of a certain amount of ginkgolide C, ginkgolide J, and ginkgolide L greatly enhances the effect of improving the depressive state. It is further proved through experiments that after the provision of the Ginkgo diterpene lactone composition, indexes, such as SOD, MDA, GSH, and TAC, can be improved to different degrees. For example, after the addition of a certain amount of ginkgolide C, ginkgolide J, and ginkgolide L, the improving effect gets more obvious, the oxidative stress level can be better improved, and the oxidative damage can be relieved.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: December 13, 2022
    Assignee: JIANGSU KANION PHARMACEUTICAL CO., LTD
    Inventors: Wei Xiao, Enli Zhou, Zeyu Cao, Xiujuan Chang, Xiaodong Kang, Yongxiang Wang, Hanfei Hu, Yun Wu, Zhenzhong Wang, Chenfeng Zhang
  • Publication number: 20220308960
    Abstract: Data redundancy arrangements for memory and storage devices are discussed herein. In one example, a method of operating a data storage system includes writing data to a non-volatile memory die by at least spanning bits of the data and one or more data redundancy bits generated for the data across a quantity of data storage cells of more than one plane of the non-volatile memory die. The more than one plane of the non-volatile memory die comprise groupings of data storage cells having independent source lines and bit lines that provide for concurrent write operations to the more than one plane.
    Type: Application
    Filed: June 13, 2022
    Publication date: September 29, 2022
    Inventors: Chenfeng ZHANG, Vamsi SATA, Monish SHAH
  • Patent number: 11422886
    Abstract: Data redundancy arrangements for memory and storage devices are discussed herein. In one example, a method of operating a data storage system includes identifying a data page for storage in a non-volatile memory die, and generating one or more data redundancy bits for the data page. The method also includes writing the data page to the non-volatile memory die by at least spanning bits of the data page and the one or more data redundancy bits across a quantity of data storage cells that share a structural property in the non-volatile memory die.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: August 23, 2022
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Chenfeng Zhang, Vamsi Sata, Monish Shah
  • Publication number: 20210216399
    Abstract: Data redundancy arrangements for memory and storage devices are discussed herein. In one example, a method of operating a data storage system includes identifying a data page for storage in a non-volatile memory die, and generating one or more data redundancy bits for the data page. The method also includes writing the data page to the non-volatile memory die by at least spanning bits of the data page and the one or more data redundancy bits across a quantity of data storage cells that share a structural property in the non-volatile memory die.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 15, 2021
    Inventors: Chenfeng Zhang, Vamsi Sata, Monish Shah
  • Publication number: 20210196773
    Abstract: A Ginkgo diterpene lactone composition is provided. The composition has the effect of improving a depressive state. The composition can prolong a tail flick interval time and a swimming interval time of a mouse to different degrees and can also increase the frequency of escaping from electric shock to different degrees. The additional addition of a certain amount of ginkgolide C, ginkgolide J, and ginkgolide L greatly enhances the effect of improving the depressive state. It is further proved through experiments that after the provision of the Ginkgo diterpene lactone composition, indexes, such as SOD, MDA, GSH, and TAC, can be improved to different degrees. For example, after the addition of a certain amount of ginkgolide C, ginkgolide J, and ginkgolide L, the improving effect gets more obvious, the oxidative stress level can be better improved, and the oxidative damage can be relieved.
    Type: Application
    Filed: November 13, 2018
    Publication date: July 1, 2021
    Inventors: Wei XIAO, Enli ZHOU, Zeyu CAO, Xiujuan CHANG, Xiaodong KANG, Yonxiang WANG, Hanfei HU, Yun WU, Zhenzhong WANG, Chenfeng ZHANG
  • Publication number: 20210069148
    Abstract: A Gingko diterpene lactone composition is provided. The extract can lower the neurological function score of a cerebral ischemia-reperfusion rat, reduce the cerebral ischemia area and the water content after brain tissue edema, improve SOD activity, and decrease the MDA content. The composition can inhibit rabbit platelet aggregation induced by PAF and ADP inducers at different time points so as to reduce the maximum aggregation rate. In addition, experiments show that the effect of each monomer compound in the Gingko diterpene lactone composition is significantly increased at certain proportion.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 11, 2021
    Inventors: Wei XIAO, Xiujuan CHANG, Enli ZHOU, Xiaodong KANG, Yongxiang WANG, Hanfei HU, Yun WU, Zhenzhong WANG, Chenfeng ZHANG
  • Publication number: 20200350058
    Abstract: A process knowledge system for traditional Chinese medicine production includes a database module having production data acquisition and storage units. The production data acquisition unit acquires process parameter data in production. The parameter data includes quality and process data and is stored in the storage unit. A capability evaluation module evaluates the process capability of the system according to the quality data to obtain a process capability evaluation result. A monitoring feedback module enters a whole-process monitoring mode the process capability is found sufficient. A design space searching module enters a design space searching mode when the process capability is found insufficient.
    Type: Application
    Filed: August 8, 2018
    Publication date: November 5, 2020
    Inventors: Wei XIAO, Xuesong LIU, Ya LING, Yong CHEN, Zhenzhong WANG, Xiaohong JIANG, Yerui LI, Lewei BAO, Chenfeng ZHANG, Lei WANG, YONGJIE Chen
  • Patent number: 8982637
    Abstract: Techniques are provided for sensing memory cells in a 3D stacked non-volatile memory device in a way which reduces read disturb, by using read pass voltages which are adjusted based on variations in a memory hole diameter. The memory cells are in NAND strings which extend in the memory holes. A larger read pass voltage is used for memory cells which are adjacent to wider portions of the memory holes, and a smaller read pass voltage is used for memory cells which are adjacent to narrower portions of the memory holes. This approach reduces the worst-case read disturb. Further, an overall resistance in the NAND string channel may be substantially unchanged so that a reference current used during sensing may be unchanged. The read pass voltage may be set based on a program voltage trim value, which is indicative of programming speed and memory hole diameter.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: March 17, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Yingda Dong, Chenfeng Zhang, Wendy Ou, Seung Yu, Masaaki Higashitani
  • Publication number: 20150070998
    Abstract: Techniques are provided for sensing memory cells in a 3D stacked non-volatile memory device in a way which reduces read disturb, by using read pass voltages which are adjusted based on variations in a memory hole diameter. The memory cells are in NAND strings which extend in the memory holes. A larger read pass voltage is used for memory cells which are adjacent to wider portions of the memory holes, and a smaller read pass voltage is used for memory cells which are adjacent to narrower portions of the memory holes. This approach reduces the worst-case read disturb. Further, an overall resistance in the NAND string channel may be substantially unchanged so that a reference current used during sensing may be unchanged. The read pass voltage may be set based on a program voltage trim value, which is indicative of programming speed and memory hole diameter.
    Type: Application
    Filed: September 12, 2013
    Publication date: March 12, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Yingda Dong, Chenfeng Zhang, Wendy Ou, Seung Yu, Masaaki Higashitani
  • Patent number: 8908435
    Abstract: An erase process for a 3D stacked memory device controls a drain-side select gate (SGD) and a source-side select gate (SGS) of a NAND string. In one approach, SGD and SGS are driven to provide a predictable drain-to-gate voltage across the select gates while an erase voltage is applied to a bit line or source line. A more consistent gate-induced drain leakage (GIDL) at the select gates can be generated to charge up the body of the NAND string. Further, the select gate voltage can be stepped up with the erase voltage to avoid an excessive drain-to-gate voltage across the select gates which causes degradation. The step up in the select gate voltage can begin with the first erase-verify iteration of an erase operation, or at a predetermined or adaptively determined erase-verify iteration, such as based on a number of program-erase cycles.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: December 9, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Haibo Li, Xiying Costa, Chenfeng Zhang
  • Patent number: 8885412
    Abstract: An erase process for a 3D stacked memory device controls a drain-side select gate (SGD) and a source-side select gate (SGS) of a NAND string. In one approach, SGD and SGS are driven to provide a predictable drain-to-gate voltage across the select gates while an erase voltage is applied to a bit line or source line. A more consistent gate-induced drain leakage (GIDL) at the select gates can be generated to charge up the body of the NAND string. Further, the select gate voltage can be stepped up with the erase voltage to avoid an excessive drain-to-gate voltage across the select gates which causes degradation. The step up in the select gate voltage can begin with the first erase-verify iteration of an erase operation, or at a predetermined or adaptively determined erase-verify iteration, such as based on a number of program-erase cycles.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: November 11, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Haibo Li, Xiying Costa, Chenfeng Zhang
  • Publication number: 20140226416
    Abstract: An erase process for a 3D stacked memory device controls a drain-side select gate (SGD) and a source-side select gate (SGS) of a NAND string. In one approach, SGD and SGS are driven to provide a predictable drain-to-gate voltage across the select gates while an erase voltage is applied to a bit line or source line. A more consistent gate-induced drain leakage (GIDL) at the select gates can be generated to charge up the body of the NAND string. Further, the select gate voltage can be stepped up with the erase voltage to avoid an excessive drain-to-gate voltage across the select gates which causes degradation. The step up in the select gate voltage can begin with the first erase-verify iteration of an erase operation, or at a predetermined or adaptively determined erase-verify iteration, such as based on a number of program-erase cycles.
    Type: Application
    Filed: April 16, 2014
    Publication date: August 14, 2014
    Applicant: SanDisk Technologies Inc.
    Inventors: Haibo Li, Xiying Costa, Chenfeng Zhang
  • Publication number: 20130163336
    Abstract: An erase process for a 3D stacked memory device controls a drain-side select gate (SGD) and a source-side select gate (SGS) of a NAND string. In one approach, SGD and SGS are driven to provide a predictable drain-to-gate voltage across the select gates while an erase voltage is applied to a bit line or source line. A more consistent gate-induced drain leakage (GIDL) at the select gates can be generated to charge up the body of the NAND string. Further, the select gate voltage can be stepped up with the erase voltage to avoid an excessive drain-to-gate voltage across the select gates which causes degradation. The step up in the select gate voltage can begin with the first erase-verify iteration of an erase operation, or at a predetermined or adaptively determined erase-verify iteration, such as based on a number of program-erase cycles.
    Type: Application
    Filed: December 21, 2011
    Publication date: June 27, 2013
    Inventors: Haibo Li, Xiying Costa, Chenfeng Zhang
  • Publication number: 20050042308
    Abstract: The invention publishes a kind of drug complex with cholagogue and lithontriptic effect and its preparation method; the invention also publishes a kind of quality-control method of a kind of drug complex soft capsule. The invention drug complex is composed by the main materials of mint oil and herit oil. The aforementioned drug is mixed uniformly according to certain proportion, and can be added into conventional accessories to prepare into clinically accepted forms of drug, such as pill, tablet, orally-taken liquid preparation, capsule, granule et al. To control the drug quality according to the quality-control method of the soft-capsule-form drug publicized in the invention, good product stability and high repeatability can be acquired; The invention drug complex has distinct cholagogue, lithontriptic, anti-inflammation, analgesic effect through the pharmacological experiment.
    Type: Application
    Filed: September 5, 2002
    Publication date: February 24, 2005
    Inventors: Wei Xiao, Yin Yang, Ya Ling, Minghui Li, Zhenggen Liao, Chenfeng Zhang, Shubo Cao