Abstract: In a method of manufacturing a semiconductor device, an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer respectively formed, a dielectric layer is formed over the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer, a first opening is formed in the dielectric layer to expose a part of the n-type source/drain epitaxial layer and a second opening is formed in the dielectric layer to expose a part of the p-type source/drain epitaxial layer, and the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer respectively recessed. A recessing amount of the n-type source/drain epitaxial layer is different from a recessing amount of the p-type source/drain epitaxial layer.

Abstract: A message addressed to a user is received. A first model is applied to the message to produce a first output indicative of whether the message is representative of a non-malicious message. The first model is trained using past messages that have been verified as non-malicious messages. It is determined, based on the first output, that the message is potentially a malicious message. Responsive to determining that the message is potentially a malicious email based on the first output, apply a second model to the message to produce a second output indicative of whether the message is representative of a given type of attack. The second model is one of a plurality of models. At least one model included in the plurality of models is associated with characterizing a goal of the malicious message. An action is performed with respect to the message based on the second output.

Abstract: A method of manufacturing a circuit pattern structure, a measurement method, and a circuit pattern structure are provided. The method of manufacturing the circuit pattern structure includes: forming a dielectric layer; forming at least one first pad at least partially in the dielectric layer; forming a second pad adjacent to the at least one first pad and having a height greater than that of the at least one first pad.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: A method of fabricating a semiconductor structure includes selective use of a cladding layer during the fabrication process to provide critical dimension uniformity. The cladding layer can be formed before forming a recess in an active channel structure or can be formed after filling a recess in an active channel structure with dielectric material. These techniques can be used in semiconductor structures such as gate-all-around (GAA) transistor structures implemented in an integrated circuit.

Abstract: A semiconductor device includes a semiconductor substrate, a control gate, a select gate, a charge trapping structure, a dielectric structure, and a spacer. The control gate and the select gate are over a channel region of the semiconductor substrate and separated from each other. The charge trapping structure is between the control gate and the semiconductor substrate. The dielectric structure is between the select gate and the semiconductor substrate. The dielectric structure has a first part and a second part, the first part is between the charge trapping structure and the second part, and the second part is thicker than the first part. The select gate is between the spacer and the control gate, and the select gate is separated from the spacer by the second part of the dielectric structure.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a spacer layer along a first fin structure and a second fin structure, etching a first portion of the spacer layer and the first fin structure to form first fin spacers and a first recess between the first fin spacers, etching a second portion of the spacer layer and the second fin structure to form second fin spacers and a second recess between the second fin spacers, and forming a first source/drain feature in the first recess and a second source/drain feature in the second recess. The second fin structure is wider than the first fin structure. The first fin spacers have a first height, and the second fin spacers have a second height that is greater than the first height.

Abstract: An accuracy measurement kit is provided and includes a marker, at least one light beam device, an image capture device, and a processing device. The marker is disposed on an autonomous mobile vehicle, and at least partially includes a reference pattern. The light beam device is configured to emit a light beam to the autonomous mobile vehicle located at a predetermined position so as to form a light spot on the marker. The processing device is configured to capture the light spot the marker on the autonomous mobile vehicle for generating a to-be-analyzed image. The processing device is configured to obtain an offset of the autonomous mobile vehicle in an X-axis direction and a Y-axis direction by calculating images of the to-be-analyzed image corresponding to the reference pattern and the light spot.

Abstract: An accuracy measurement method of an autonomous mobile vehicle, a calculating device, and an autonomous mobile vehicle are provided. The accuracy measurement method includes a distance calculating step, a regression center calculating step, and an average calculating step. The distance calculating step includes a controlling step, a light beam emitting step, an image capturing step, an image analyzing step, and a converting step. The regression center calculating step is performed after the distance calculating step is repeatedly performed by at least two times. The accuracy measurement method is performed to obtain an X-axis offset in an X-axis direction, a Y-axis offset in a Y-axis direction, and an angle deflection of an autonomous mobile vehicle.

Abstract: An electronic package is provided, in which an electronic element is disposed on a carrier structure, and an interposer is stacked on the electronic element. Further, a wire is connected to the interposer and grounds the carrier structure, such that the wire and the interposer surround the electronic element. Therefore, the wire can be used as a shielding element when the electronic package is in operation to prevent the electronic element from being subjected to external electromagnetic interference.

Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.

Abstract: A powder atomic layer deposition apparatus for blowing powders is disclosed. The powder atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit drives the vacuum chamber to rotate through the shaft sealing device. The shaft sealing device includes an outer tube and an inner tube, wherein the inner tube is arranged in an accommodating space of the outer tube. At least one air extraction line and at least one air intake line are located in the inner tube, wherein the air intake line extends from the inner tube into a reaction space within the vacuum chamber, and is used to transport the a non-reactive gas to the reaction space to blow the powders around in the reaction space.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: In one embodiment, an integrated circuit cell includes a first circuit component and a second circuit component. The first circuit component includes fin field-effect transistors (finFETs) formed in a high fin portion of the integrated circuit cell, the high fin portion of the integrated circuit including a plurality of fin structures arranged in rows. The second circuit component that includes finFETs formed in a less fin portion of the integrated circuit cell, the less fin portion of the integrated circuit including a lesser number of fin structures than the high fin portion of the integrated circuit cell.

Abstract: A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a substrate, where the first layer stack and the second layer stack have a same layered structure that includes a layer of a first electrically conductive material over a layer of a first dielectric material, where the first layer stack extends beyond lateral extents of the second layer stack; forming a trench that extends through the first layer stack and the second layer stack; lining sidewalls and a bottom of the trench with a ferroelectric material; conformally forming a channel material in the trench over the ferroelectric material; filling the trench with a second dielectric material; forming a first opening and a second opening in the second dielectric material; and filling the first opening and the second opening with a second electrically conductive material.

Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.

Abstract: A backlight module includes a light guide plate, a light source, and an optical film. The light guide plate has a light incident surface and a light exiting surface opposite to the light incident surface, in which the light exiting surface has a normal line. The light source is adjacent to the light incident surface. The optical film is disposed to the light exiting surface and includes plural parallel prisms and plural microstructures. An extending direction of each of the prisms is perpendicular to the normal line, and each of the prisms faces the light exiting surface of the light guide plate. Each of the microstructures is located on a surface of the optical film which faces away from the light guide plate. Each of the microstructures has a pyramid structure with plural facets. The prisms are located between the microstructures and the light exiting surface.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A golf teaching method and a golf teaching system are provided. The golf teaching method includes: configuring image capturing devices and golf simulator to capture swing images and corresponding simulator data records, when a user performs a golf swing; configuring an expert model that includes expert motion information and corresponding correction suggestion information; configuring a computing device to perform an analysis process on the swing images and the simulator data records to divide the golf swing into user motions according to stages and obtaining records of user motion information corresponding to the plurality of stages, and to compare the user motion information with the corresponding expert motion information in each stage through the expert model, and to provide the corresponding correction suggestion information according to a comparison result; and configuring a user interface to provide the correction suggestion information.

Abstract: A computer-executable method for generating a side-by-side three-dimensional (3D) image includes the steps of creating a 3D mesh and estimating depth information of the raw image. The method further includes the steps of updating the left mesh area and the right mesh area of the 3D mesh based on the estimated depth information of the raw image and projecting each of the mesh vertices of the left mesh area onto a coordinate system of the side-by-side 3D image based on a left eye position, and projecting each of the mesh vertices of the right mesh area onto the coordinate system of the side-by-side 3D image based on a right eye position. The method further obtains the side-by-side 3D image by coloring the left mesh area and the right mesh area projected onto the coordinate system of the side-by-side 3D image based on the raw image.