Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: An efficiency tracking method of a controller applied to a flyback power converter includes before the controller soft starts, an original frequency variation curve setting voltage generated by the controller outputting an original frequency variation curve setting detection current to an original frequency variation curve setting detection resistor determining a frequency variation curve of the flyback power converter, and utilizing adjustment of resistance of the original frequency variation curve setting detection resistor to achieve efficiency optimization. Therefore, the controller controls an output voltage of the flyback power converter and tracks a maximum power point of the flyback power converter according to the efficiency tracking method to achieve efficiency optimization.

Abstract: A semiconductor package includes a first semiconductor substrate, an array of conductive bumps, a second semiconductor substrate, and a spacing pattern. The first semiconductor substrate includes a pad region and an array of first pads disposed within the pad region. The array of conductive bumps is disposed on the array of first pads respectively. The second semiconductor substrate is disposed over the first semiconductor substrate and includes an array of second pads bonded to the array of conductive bumps respectively. The spacing pattern is disposed between the first semiconductor substrate and the second semiconductor substrate, wherein the spacing pattern is located at a periphery of the pad region.

Abstract: Disclosed are a display device and a backlight control method for the display device. The display device includes a display panel, a backlight source, a first computing unit, and a second computing unit. The display panel includes a first display region and a second display region. The first light-emitting region corresponds to the first display region. The second light-emitting region corresponds to the second display region. The first computing unit calculates a first brightness distribution within a first range. The second computing unit calculates a second brightness distribution within a second range. The first light-emitting region emits light according to the first brightness distribution. The second light-emitting region emits light according to the second brightness distribution.

Abstract: A method includes forming first and second semiconductor fins and a gate structure over a substrate; forming a first and second source/drain epitaxy structures over the first and second semiconductor fins; forming an interlayer dielectric (ILD) layer over the first and second source/drain epitaxy structures; etching the gate structure and the ILD layer to form a trench; performing a first surface treatment to modify surfaces of a top portion and a bottom portion of the trench to NH-terminated; performing a second surface treatment to modify the surfaces of the top portion of the trench to N-terminated, while leaving the surfaces of the bottom portion of the trench being NH-terminated; and depositing a first dielectric layer in the trench, wherein the first dielectric layer has a higher deposition rate on the surfaces of the bottom portion of the trench than on the surfaces of the bottom portion of the trench.

Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.

Abstract: A substrate-bonding device includes a carrier, three first aligning units, three second aligning units, a pressing plate, and two flat-edge aligners. A carrying surface of the carrier is provided with a placement area for placing a first substrate provided with a flat edge thereon. The first aligning units, the second aligning units and the flat edge aligners are disposed around the placement area. The first aligning units are configured to align the first substrate and to support a second substrate provided with a second flat edge. The second aligning units are configured to align the second substrate. The flat edge aligners are configured to contact the first and the second flat edges, to position and align the first and the second substrates. The pressing plate is disposed to face the placement area for pressing the first and second substrates. The flat edge aligners move along with the pressing plate.

Abstract: The present invention relates to a cholesteric liquid crystal display, a liquid crystal driving unit, and a driving method for reducing the maximum driving voltage. The cholesteric liquid crystal display comprises a cholesteric liquid crystal display panel, a temperature detecting device, and a liquid crystal driving unit. If the temperature detecting device detects a temperature below the optimal range for the cholesteric liquid crystal display panel, the liquid crystal driving unit will operate the cholesteric liquid crystal display panel in DDS timing mode. When the temperature detecting device detects that the temperature of the display panel exceeds the optimal temperature range, the liquid crystal driving unit will operate the display panel in PWM timing mode, which can solve the problem of increased power consumption caused by changes in ambient temperature, and can greatly improve the better color level.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: There is provided a computer implemented method, system and device for automatically generating a machine learning model for forecasting a likelihood of compromise in one or more transaction devices and subsequently triggering performing an action on one or more related computing devices based on a potentially compromised transaction device.

Abstract: An aqueous solution (20) containing carbohydrate for generating smoke consists of 91.9-98.95 wt % of pure water, 1-8 wt % of carbohydrate, and 0.05-0.1 wt % of a water soluble aromatic substance of orange flavor. A method for generating smoke includes preparing an aqueous solution (20) including 91.9-98.95 wt % of pure water, 1-8 wt % of carbohydrate, and 0.05-0.1 wt % of a water soluble aromatic substance of orange flavor; and vibrating the aqueous solution (20) at a high frequency, causing gradual atomization from a surface of the aqueous solution (20) to form droplets containing the carbohydrate and having a diameter in a range of 6-20 ?m.

Abstract: Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

Abstract: A method for defect inspection includes receiving a substrate having a plurality of patterns; obtaining a gray scale image of the substrate, wherein the gray scale image includes a plurality of regions, and each of the regions has a gray scale value; comparing the gray scale value of each region to a gray scale references to define a first group, a second group and an Nth group, wherein each of the first group, the second group and the Nth group has at least a region; performing a calculation to obtain a score; and when the score is greater than a value, the substrate is determined to have an ESD defect, and when the score is less than the value, the substrate is determined to be free of the ESD defect.

Abstract: A memory device and a method of operating a memory device are disclosed. In one aspect, the memory device includes a plurality of non-volatile memory cells, each of the plurality of non-volatile memory cells is operatively coupled to a word line, a gate control line, and a bit line. Each of the plurality of non-volatile memory cells comprises a first transistor, a second transistor, a first diode-connected transistor, and a capacitor. The first transistor, second transistor, first diode-connected transistor are coupled in series, with the capacitor having a first terminal connected to a common node between the first diode-connected transistor and the second transistor.

Abstract: A display apparatus includes a light-transmitting structural plate, some optical microscopic structures, an optical film, a base plate and some light emitting elements. The light-transmitting structural plate has a first side and a second side opposite to each other. The optical microscopic structures are regularly arrayed and formed on the first side or the second side. The optical microscopic structure has an inclined surface connecting at a connecting line and forming an angle ranging between 30 degrees and 150 degrees with a corresponding inclined surface of an adjacent one of the optical microscopic structures. The optical film is located on the first side. The base plate is separated from the second side by a space. The light emitting elements are located inside the space and disposed on the base plate. The light emitting elements respectively emit a light ray to the light-transmitting structural plate.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate strip disposed over the substrate. The gate strip includes a high-k layer disposed over the substrate, an N-type work function metal layer disposed over the high-k layer, and a barrier layer disposed over the N-type work function metal layer. The barrier layer includes at least one first film containing TiAlN, TaAlN or AlN.