Abstract: A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: A high-strength aluminum-magnesium silicon alloy and its manufacturing process which includes a composition adjusting step to add vanadium (V) and zirconium (Zr) in an aluminum-magnesium silicon alloy to refine grains of the alloy; a material casting step, a material preheating step, a hot forging step and a heat treatment step to melt magnesium and silicon atoms into an aluminum base to cause a lattice distortion and achieve a strengthening effect and precipitate Mg2Si from the grains of the alloy, and the precipitated particles act as obstacles to dislocation movement. Therefore, the alloy product has a yield strength improved by 31%, the ultimate strength by 39%, the hardness by 34%, and the fatigue strength by 55%. Therefore, the alloy product can be used in components with a high strength requirement such as the aluminum alloy wheels and the control arms of a car suspension system.

Abstract: In general, the playing time of the slide show is not always just equal to that of the background music. Hence, it is desired to adjust their playing time interval. The present invention therefore provides a pleasant way to synchronize the playing time of the side show with that of the background music. First, the playing time difference between the slide show and the background music is obtained. The slide show would be divided into two segments, which are the first segment and the second segment. Each image of the first segment would be displayed together with certain image of the second segment by frame division. Therefore, a slide show with the same playing time as the background music is generated.

Abstract: A graphical user interface for a slideshow presentation. The graphical user interface comprises: a selection controller by which slides in the slideshow are previewed in sequence when a first event occurs and one of the previewed slides is selected when a second event occurs; a preview window displaying a thumbnail for each of the slides currently previewed by the selection controller; and a main window displaying the slide selected by the selection controller.

Abstract: A method of visually processing image files in an image editor and an image editor using the same. A plurality of thumbnails of the image files are produced from the content of the image files. These thumbnails are drawn on a file list of the image editor. The file list shows the filenames and the accompanying thumbnails of the image files and the user can make file selections based the visual information. During operation, the image editor continuously detects whether the user has performed the compilation of the image files. When the image files have been edited, the thumbnails displayed on the file list are dynamically updated according to the content of the image files.